Abstract: In a method for producing a solar cell, a layer stack of dielectric layers is applied to a back of a solar cell substrate and the layer stack is heated and is held at temperatures of at least 700° C. during a time period of at least 5 minutes. The novel solar cell has a layer stack of dielectric layers on its back. At least one of the dielectric layers of the layer stack is densified so that its resistivity to firing-through of pastes with glass components is enhanced.

Abstract: In a method for producing a solar cell, a layer stack of dielectric layers is applied to a back of a solar cell substrate and the layer stack is heated and is held at temperatures of at least 700° C. during a time period of at least 5 minutes. The novel solar cell has a layer stack of dielectric layers on its back. At least one of the dielectric layers of the layer stack is densified so that its resistivity to firing-through of pastes with glass components is enhanced.

Abstract: The invention relates to a method for masking a semiconductor substrate including the following steps: providing a planar semiconductor substrate having a first side and a second side lying opposite thereto, applying a mask to at least one of the sides, an extrusion printing method being used for applying the mask.

Abstract: In a method for producing a solar cell, a layer stack of dielectric layers is applied to a back of a solar cell substrate and the layer stack is heated and is held at temperatures of at least 700° C. during a time period of at least 5 minutes. The novel solar cell has a layer stack of dielectric layers on its back. At least one of the dielectric layers of the layer stack is densified so that its resistivity to firing-through of pastes with glass components is enhanced.

Abstract: A method for doping a semiconductor substrate includes heating the semiconductor substrate by irradiation with laser radiation and at the same time diffusing dopant from a dopant source into the semiconductor substrate in heated regions. The semiconductor substrate is heated by the irradiation with laser radiation. A surface portion of the semiconductor substrate that is less than 10% of the total surface of all irradiated regions is melted and recrystallized. There is also provided a solar cell.

Abstract: A method for manufacturing a solar cell via a two-stage doping includes the steps of forming an oxide layer, which can be penetrated by a first dopant, on at least one part of the surface of a solar cell substrate, forming an opening in the oxide layer in at least one high-doping region by removing the oxide layer in this high-doping region and diffusing the first dopant into the at least one high-doping region of the solar cell substrate through the opening. The first dopant is diffused into the solar cell substrate through the oxide layer. The diffusing-in through the openings and through the oxide layer takes place at the same time in a common diffusion step and the solar cell substrate is diffused in the common diffusion step in an at least partially hydrophilic state.

Abstract: Method for producing solar cells with a two-stage doping (9, 11) comprising the method steps of heavy doping (50) of at least a part of the solar cell substrate (1), of at least temporarily protecting doped areas (8), in which heavily doped areas (9) of the two-stage doping (9, 11) should be formed, from an etching medium and etching back (54; 62, 64; 72, 74) unprotected doped areas (17) of the solar cell substrate (1) by means of the etching medium, whereby, for the purpose of protecting the doped areas, sacrificial structures (7) are applied (52) on the areas (8) to be protected, which are at least partly etched (54; 62, 64; 72, 74) during etching back (54; 62, 64; 72, 74) of the unprotected doped areas.

Abstract: The invention relates to a method for masking a semiconductor substrate comprising the following steps: providing a planar semiconductor substrate having a first side and a second side lying opposite thereto, applying a mask to at least one of the sides, an extrusion printing method being envisaged for applying the mask.

Abstract: The invention relates to a method for structuring an oxide layer applied to a substrate material. The aim of he invention is to provide an inexpensive method for structuring such an oxide layer. To this end, a squeegee paste that contains an oxide-etching component is printed on the oxide layer through a pattern stencil after silk screen printing and the printed squeegee paste is removed after a determined dwelling time.

Abstract: The invention relates to a method for structuring an oxide layer applied to a substrate material. The aim of the invention is to provide an inexpensive method for structuring such an oxide layer. To this end, a squeegee paste that contains an oxide-etching component is printed on the oxide layer through a pattern stencil after silk screen printing and the printed squeegee paste is removed after a predetermined dwelling time.

Abstract: For the simple production of a back surface field it is proposed that a boron-containing diffusion source layer (2) be applied to the rear (RS) of a silicon wafer (1) and boron be driven into the wafer to a depth of about 1 to 5 .mu.m at 900 to 1200.degree. C. This is done in an oxygen-containing atmosphere so that an oxide layer (4) is formed on open silicon surfaces, obviating the need to mask the regions not to be doped. After the removal of the oxide and source layer, phosphorus diffusion takes place and the back contact (3) is produced. It contains aluminum and, during the burn-in process, provides good ohmic contact.

Abstract: For the simple production of a back surface field it is proposed that a boron-containing diffusion source layer (2) be applied to the rear (RS) of a silicon wafer (1) and boron be driven into the wafer to a depth of about 1 to 5 .mu.m at 900 to 1200.degree. C. This is done in an oxygen-containing atmosphere so that an oxide layer (4) is formed on open silicon surfaces, obviating the need to mask the regions not to be doped. After the removal of the oxide and source layer, phosphorus diffusion takes place and the back contact (3) is produced. It contains aluminum and, during the burn-in process, provides good ohmic contact.