Abstract: A method for generating a labeled set of images for use in machine learning based stray light characterization for space-related optical systems. The method comprises (a) obtaining a set of images simulated for a space-related optical system, wherein the images of the set of images contain stray light simulated for the space-related optical system, (b) for each image of the set of images, identifying one or more clusters of light contained in the respective image and labeling the respective image by the one or more clusters of light, wherein the one or more clusters of light comprise at least one cluster of stray light, and (c) creating, based on the labeled images of the set of images, a plurality of new labeled images by applying transformations to the labeled images to generate an augmented set of labeled images.

Abstract: A method and apparatus for detecting changes in the vibrational mode spectra and/or elasticity of a pellicle without reliance upon visual inspection are provided. Embodiments include providing a pellicle, a lower surface of the pellicle attached to a photomask; directing light from a light source onto an upper surface of the pellicle at an angle to the upper surface; causing a deflection of the pellicle concurrently with the light being directed onto the pellicle; detecting light reflected off of the deflected pellicle; and characterizing a vibrational mode of the pellicle based on the detection.

Abstract: Methods, apparatus, and system for minimizing defectivity in top-coat-free immersion photolithography are provided. Embodiments include forming a photomask by defining a first pattern including a main functional pattern in the photomask; and defining a second pattern including a sub-resolution fill pattern in the photomask in areas between or and/or within structures of the first pattern, the fill pattern having a pitch or range of pitches smaller than a minimum resolved pitch of the lithographic exposure and/or at least a part of the sub-resolution structures of the sub-resolution fill pattern not substantially modifying an imaging of any structure of the main functional pattern in the lithographic exposure.

Abstract: Methods, apparatus, and system for minimizing defectivity in top-coat-free immersion photolithography are provided. Embodiments include forming a photomask by defining a first pattern including a main functional pattern in the photomask; and defining a second pattern including a sub-resolution fill pattern in the photomask in areas between or and/or within structures of the first pattern, the fill pattern having a pitch or range of pitches smaller than a minimum resolved pitch of the lithographic exposure and/or at least a part of the sub-resolution structures of the sub-resolution fill pattern not substantially modifying an imaging of any structure of the main functional pattern in the lithographic exposure.

Abstract: A method and apparatus for detecting changes in the vibrational mode spectra and/or elasticity of a pellicle without reliance upon visual inspection are provided. Embodiments include providing a pellicle, a lower surface of the pellicle attached to a photomask; directing light from a light source onto an upper surface of the pellicle at an angle to the upper surface; causing a deflection of the pellicle concurrently with the light being directed onto the pellicle; detecting light reflected off of the deflected pellicle; and characterizing a vibrational mode of the pellicle based on the detection.

Abstract: A method includes providing a semiconductor structure and forming a plurality of gate structures over the semiconductor structure. The formation of the plurality of gate structures includes a first patterning process. The first patterning process includes a first photoresist exposure process and a second photoresist exposure process. In the first photoresist exposure process, a first photomask and a first illumination source pattern are used. The first photomask is adapted for providing a first gate cut photoresist pattern over a first area of the semiconductor structure. In the second photoresist exposure process, a second photomask and a second illumination source pattern that is different from the first illumination source pattern are used. The second photomask is adapted for providing a second gate cut photoresist pattern over a second area of the semiconductor structure.

Abstract: A method for the manufacture of a semiconductor device is provided, including the steps of providing a semiconductor substrate including a first area separated from a second area by a first isolation region, wherein the second area includes an intermediate transistor comprising a gate electrode, forming an oxide layer over the first and second areas, forming an optical planarization layer (OPL) over the oxide layer, forming a mask layer over the OPL in the first area without covering the OPL in the second area, and etching the OPL with the mask layer being present to expose the oxide layer over the gate electrode of the transistor.

Abstract: A method for the manufacture of a semiconductor device is provided, including the steps of providing a semiconductor substrate including a first area separated from a second area by a first isolation region, wherein the second area includes an intermediate transistor comprising a gate electrode, forming an oxide layer over the first and second areas, forming an organic planarization layer (OPL) over the oxide layer, forming a mask layer over the OPL in the first area without covering the OPL in the second area, and etching the OPL with the mask layer being present to expose the oxide layer over the gate electrode of the transistor.