Abstract: A resistive memory device including at least one first electrode based on a first metal and a second electrode based on a second metal, and a memory element in the form of a metal filament based on a third metal and inserted between the first and second electrodes, the memory element having a filament cross-section strictly smaller than the electrode cross-sections, wherein the third metal has a chemical composition, different from those of the first and second metals giving it an etching speed greater than those of the first and second metals, preferably such that the selectivity at the etching is greater than or equal to 3:1, vis-á-vis the first and second metals. A method for manufacturing such a device is also disclosed.

Abstract: A method is for depositing a thin tungsten and/or molybdenum sulfide film on a substrate chemically, under vacuum.

Abstract: A method for producing a resistive memory cell from a stack of layers having a metal-oxide layer interleaved between first and second electrodes includes forming, within one from among the first and second electrodes, an interlayer material-based electrode interlayer having a selectivity to etching greater than or equal to 2:1 relative to materials of the electrodes. During an etching of the stack, overetching is performed configured to laterally consume, in a horizontal direction, the interlayer material such that the electrode interlayer has a lateral recess greater than or equal to 10 nm.

Abstract: A device for depositing at least one radical chalcogenide thin film on an element to be treated including an intake area and a diffusion area receiving the element to be treated, the intake area and the diffusion area extending along a longitudinal axis, a radical hydrogen source connected to the intake area, pumping means, means for injecting a reagent reacting with the radical hydrogen to form H2S, and means for supplying a precursor to the diffusion area. The injection means inject the reagent into a central area of the intake area in the longitudinal direction within the radical hydrogen flow. The pumping means are controlled so as to operate during the reagent injection, and generate a flow of H2S along the element to be treated in order to activate said element so as to absorb the precursor.

Abstract: A method for manufacturing a microelectronic device including resistive memory points, a first portion of the memory points forming a physical unclonable function, the memory points of the first portion forming a PUF zone, a second portion of the memory points providing a memory function, the memory points of the second forming a memory zone, the method including providing a support including a first electrode layer and an active oxide resistive memory layer; etching the active oxide resistive memory layer in the PUF zone; etching the active oxide resistive memory layer in the memory zone, the etching in the memory zone producing a dispersion of roughness of the oxide layer less than the dispersion of roughness produced by the etching in the PUF zone; depositing a second electrode layer; etching the second electrode layer, the active oxide layer and the first electrode layer to define the memory points.

Abstract: An OxRAM oxide based resistive random access memory cell includes a first electrode; a layer M1Oss of a sub-stoichiometric oxide of a first metal; a layer M2N of a nitride of a second metal M2; a layer M3M4O of a ternary alloy of a third metal M3, a fourth metal M4 and oxygen O, or M3M4NO of a quaternary alloy of the third metal M3, the fourth metal M4, nitrogen N and oxygen O and a second electrode. The standard free enthalpy of formation of the ternary alloy M3M4O, noted ?Gf,T0 (M3M4O), or of the quaternary alloy M3M4NO, noted ?Gf,T0 (M3M4NO), is strictly less than the standard free enthalpy of formation of the sub-stoichiometric oxide M1Oss of the first metal M1, noted ?Gf,T0 (M1Oss), itself less than or equal to the standard free enthalpy of formation of any ternary oxynitride M2NO of the second metal M2, noted ?Gf,T0 (M2NO): ?Gf,T0(M3M4O)<?Gf,T0(M1Oss)??Gf,T0(M2NO) or ?Gf,T0(M3M4NO)<?Gf,T0(M1Oss)??Gf,T0(M2NO).

Abstract: The present invention relates to a method for producing a via through a base layer of a microelectronic device, the method including formation of a hole leading to at least one first face of the base layer and filling the hole by at least one first filling material. The method also includes at least partially removing the at least one first filling material over a depth from the first face of the base layer, the depth being strictly less than a thickness dimension of the hole, so as to produce a hollow portion. Further, method includes a second step of at least partially filling the hollow portion by at least one second filling material.

Abstract: A method to manufacture a film made of vanadium disulphide by chemical vapor deposition on a previously heated substrate, includes successive procedures implemented in a vacuum reactor: injection of at least one organometallic molecule of vanadium, where the vanadium has a valence of less than or equal to 4; drainage of the reactor; injection of at least one sulphur molecule including at least one free thiol group, or forming a reaction intermediate comprising at least one free thiol group; injection of a reducing gas.

Abstract: An OxRAM oxide based resistive random access memory cell includes a first electrode; a layer M1Oss of a sub-stoichiometric oxide of a first metal; a layer M2N of a nitride of a second metal M2; a layer M3M4O of a ternary alloy of a third metal M3, a fourth metal M4 and oxygen O, or M3M4NO of a quaternary alloy of the third metal M3, the fourth metal M4, nitrogen N and oxygen O and a second electrode.

Abstract: The invention relates to a device for depositing at least one radical chalcogenide thin film on an element to be treated including an intake area (4) and a diffusion area (6) receiving the element (P) to be treated, the intake area (4) and the diffusion area (6) extending along a longitudinal axis (Z), a radical hydrogen source (8) connected to the intake area (4), pumping means (19), means for injecting a reagent reacting with the radical hydrogen to form H2S, and means for supplying a precursor to the diffusion area. The injection means inject the reagent into a central area of the intake area (4) in the longitudinal direction within the radical hydrogen flow. The pumping means (19) are controlled so as to operate during the reagent injection, and generate a flow of H2S along the element to be treated (P) in order to activate said element so as to absorb the precursor.

Abstract: The present invention relates to a method for producing a via through a base layer of a microelectronic device, the method including formation of a hole leading to at least one first face of the base layer and filling the hole by at least one first filling material. The method also includes at least partially removing the at least one first filling material over a depth from the first face of the base layer, the depth being strictly less than a thickness dimension of the hole, so as to produce a hollow portion. Further, method includes a second step of at least partially filling the hollow portion by at least one second filling material.

Abstract: A resistive non-volatile memory cell including a Metal-Insulation-Metal stack including two electrodes and a multilayer of insulation, placed between the two electrodes, including a thin layer of oxide allowing for a resistive transition and an oxygen vacancy reservoir layer is provided. The stack includes from bottom to top: the bottom electrode including a metal layer, the insulation including a layer of stoichiometric metal oxide and a layer of substoichiometric metal oxide forming the oxygen vacancy reservoir layer, and the top electrode including a layer of metal oxide and a metal layer, such that the oxygen vacancy reservoir layer is inserted between two metal oxide stoichiometric layers.

Abstract: A resistive non-volatile memory cell including a Metal-Insulation-Metal stack including two electrodes and a multilayer of insulation, placed between the two electrodes, including a thin layer of oxide allowing for a resistive transition and an oxygen vacancy reservoir layer is provided. The stack includes from bottom to top: the bottom electrode including a metal layer, the insulation including a layer of stoichiometric metal oxide and a layer of substoichiometric metal oxide forming the oxygen vacancy reservoir layer, and the top electrode including a layer of metal oxide and a metal layer, such that the oxygen vacancy reservoir layer is inserted between two metal oxide stoichiometric layers.

Abstract: A process for producing a conducting electrode on a substrate, including: depositing a layer made of a dielectric; depositing a protective layer made of the nitride of a metal on the dielectric layer; depositing a functionalization layer made of a material including a chemical species, such that the free enthalpy of formation of the nitride of the species is less, in absolute value, than the free enthalpy of formation of the nitride of the metal of the protective layer over the temperature range between 0° C. and 1200° C.; and annealing the assembly including the protective layer and the funtionalization layer so that the species diffuse from the functionalization layer into the protective layer and the nitrogen atoms migrate from the protective layer into the functionalization layer.

Abstract: A process for producing a conducting electrode on a substrate, including: depositing a layer made of a dielectric; depositing a protective layer made of the nitride of a metal on the dielectric layer; depositing a functionalization layer made of a material including a chemical species, such that the free enthalpy of formation of the nitride of the species is less, in absolute value, than the free enthalpy of formation of the nitride of the metal of the protective layer over the temperature range between 0° C. and 1200° C.; and annealing the assembly including the protective layer and the funtionalization layer so that the species diffuse from the functionalization layer into the protective layer and the nitrogen atoms migrate from the protective layer into the functionalization layer.