Patents by Inventor Ren Earl

Ren Earl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • APPARATUS AND METHOD FOR OPTICAL SENSING USING AN OPTOELECTRONIC DEVICE AND OPTOELECTRONIC DEVICE ARRAYS
    Publication number: 20210263155
    Abstract: Described is an optoelectronic device, comprising: a silicon material including a first doped region and a second doped region forming a high-field junction region; a reflective diffractive region coupled to and separated from the silicon material with a dielectric layer and positioned to interact with electromagnetic radiation; and a backside illuminated structure.
    Type: Application
    Filed: June 18, 2019
    Publication date: August 26, 2021
    Applicant: DOT9 INC
    Inventors: Drake Andrew MILLER, Ren EARL, Jeff Allan MCKEE
  • Minimally spaced MRAM structures
    Patent number: 6885051
    Abstract: A method of forming minimally spaced apart MRAM structures is disclosed. A photolithography technique is employed to define patterns an integrated circuit, the width of which is further reduced by etching to allow formation of patterns used to etch digit line regions with optimum critical dimension between any of the two digit line regions. Subsequent pinned and sense layers of MRAM structures are formed over the minimally spaced digit regions.
    Type: Grant
    Filed: April 14, 2004
    Date of Patent: April 26, 2005
    Assignee: Micron Technology, Inc.
    Inventors: D. Mark Durcan, Trung T. Doan, Roger Lee, Dennis Keller, Ren Earl
  • Minimally spaced MRAM structures
    Publication number: 20040195609
    Abstract: A method of forming minimally spaced apart MRAM structures is disclosed. A photolithography technique is employed to define patterns an integrated circuit, the width of which is further reduced by etching to allow formation of patterns used to etch digit line regions with optimum critical dimension between any of the two digit line regions. Subsequent pinned and sense layers of MRAM structures are formed over the minimally spaced digit regions.
    Type: Application
    Filed: April 14, 2004
    Publication date: October 7, 2004
    Inventors: D. Mark Durcan, Trung T. Doan, Roger Lee, Dennis Keller, Ren Earl
  • Self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure
    Patent number: 6765250
    Abstract: This invention pertains to a method of fabricating a trenchless MRAM structure and to the resultant MRAM structure. The MRAM structure of the invention has a pinned layer formed within protective sidewalls formed over a substrate. The protective sidewalls facilitate formation of the MRAM structure by a self-aligning process.
    Type: Grant
    Filed: April 9, 2003
    Date of Patent: July 20, 2004
    Assignee: Micron Technology, Inc.
    Inventors: Trung T. Doan, Roger Lee, Dennis Keller, Gurtej Sandhu, Ren Earl
  • Minimally spaced MRAM structures
    Patent number: 6750069
    Abstract: A method of forming minimally spaced apart MRAM structures is disclosed. A photolithography technique is employed to define patterns an integrated circuit, the width of which is further reduced by etching to allow formation of patterns used to etch digit line regions with optimum critical dimension between any of the two digit line regions. Subsequent pinned and sense layers of MRAM structures are formed over the minimally spaced digit regions.
    Type: Grant
    Filed: June 5, 2003
    Date of Patent: June 15, 2004
    Assignee: Micron Technology, Inc.
    Inventors: D. Mark Durcan, Trung T. Doan, Roger Lee, Dennis Keller, Ren Earl
  • Method for forming minimally spaced MRAM structures
    Patent number: 6689661
    Abstract: A method of forming minimally spaced apart MRAM structures is disclosed. A photolithography technique is employed to define patterns an integrated circuit, the width of which is further reduced by etching to allow formation of patterns used to etch digit line regions with optimum critical dimension between any of the two digit line regions. Subsequent pinned and sense layers of MRAM structures are formed over the minimally spaced digit regions.
    Type: Grant
    Filed: April 10, 2001
    Date of Patent: February 10, 2004
    Assignee: Micron Technology, Inc.
    Inventors: D. Mark Durcan, Trung T. Doan, Roger Lee, Dennis Keller, Ren Earl
  • Method of forming self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure
    Patent number: 6689624
    Abstract: This invention pertains to a method of fabricating a trenchless MRAM structure and to the resultant MRAM structure. The MRAM structure of the invention has a pinned layer formed within protective sidewalls formed over a substrate. The protective sidewalls facilitate formation of the MRAM structure by a self-aligning process.
    Type: Grant
    Filed: April 8, 2003
    Date of Patent: February 10, 2004
    Assignee: Micron Technology, Inc.
    Inventors: Trung T. Doan, Roger Lee, Dennis Keller, Gurtej Sandhu, Ren Earl
  • Method for forming minimally spaced MRAM structures
    Patent number: 6682943
    Abstract: A method of forming minimally spaced MRAM structures is disclosed. A photolithography technique is employed to define masking patterns, on the sidewalls of which spacers are subsequently formed to reduce the distance between any of the two adjacent masking patterns. A filler material is next used to fill in the space around the masking patterns and to form filler plugs. The masking patterns and the spacers are removed using the filler plugs as a hard mask. Digit and word lines of MRAM structures are subsequently formed.
    Type: Grant
    Filed: April 27, 2001
    Date of Patent: January 27, 2004
    Assignee: Micron Technology, Inc.
    Inventors: D. Mark Durcan, Gurtej Sandhu, Trung T. Doan, Roger Lee, Dennis Keller, Ren Earl
  • Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure
    Patent number: 6653154
    Abstract: This invention pertains to a method of fabricating an MRAM structure. The method includes forming a pinned layer within a protective region defined by sidewalls formed over a substrate. The protective sidewalls facilitate formation of the MRAM structure by a self-aligning process.
    Type: Grant
    Filed: March 15, 2001
    Date of Patent: November 25, 2003
    Assignee: Micron Technology, Inc.
    Inventors: Trung T. Doan, Roger Lee, Dennis Keller, Gurtej Sandhu, Ren Earl
  • Self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure
    Publication number: 20030215961
    Abstract: This invention pertains to a method of fabricating a trenchless MRAM structure and to the resultant MRAM structure. The MRAM structure of the invention has a pinned layer formed within protective sidewalls formed over a substrate. The protective sidewalls facilitate formation of the MRAM structure by a self-aligning process.
    Type: Application
    Filed: April 9, 2003
    Publication date: November 20, 2003
    Inventors: Trung T. Doan, Roger Lee, Dennis Keller, Gurtej Sandhu, Ren Earl
  • Self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure
    Publication number: 20030207471
    Abstract: This invention pertains to a method of fabricating a trenchless MRAM structure and to the resultant MRAM structure. The MRAM structure of the invention has a pinned layer formed within protective sidewalls formed over a substrate. The protective sidewalls facilitate formation of the MRAM structure by a self-aligning process.
    Type: Application
    Filed: April 8, 2003
    Publication date: November 6, 2003
    Inventors: Trung T. Doan, Roger Lee, Dennis Keller, Gurtej Sandhu, Ren Earl
  • Minimally spaced MRAM structures
    Publication number: 20030199106
    Abstract: A method of forming minimally spaced apart MRAM structures is disclosed. A photolithography technique is employed to define patterns an integrated circuit, the width of which is further reduced by etching to allow formation of patterns used to etch digit line regions with optimum critical dimension between any of the two digit line regions. Subsequent pinned and sense layers of MRAM structures are formed over the minimally spaced digit regions.
    Type: Application
    Filed: June 5, 2003
    Publication date: October 23, 2003
    Inventors: D. Mark Durcan, Trung T. Doan, Roger Lee, Dennis Keller, Ren Earl
  • Self-aligned, magnetoresitive random-access memory (MRAM) structure utilizing a spacer containment scheme
    Patent number: 6521931
    Abstract: A method of fabricating a MRAM structure and the resulting structure. The MRAM structure of the invention has the pinned layer recessed within a trench with the upper magnetic layer positioned over it. The method of MRAM fabrication utilizes a spacer processing technique, whereby the upper magnetic layer of the MRAM stack structure is formed between the region defined by the spacers, thereby allowing for self-alignment of the upper magnetic layer over the underlying pinned magnetic layer.
    Type: Grant
    Filed: January 9, 2002
    Date of Patent: February 18, 2003
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Sandhu, Roger Lee, Dennis Keller, Trung T. Doan, Max F. Hineman, Ren Earl
  • Method for forming minimally spaced MRAM structures
    Publication number: 20020160541
    Abstract: A method of forming minimally spaced MRAM structures is disclosed. A photolithography technique is employed to define masking patterns, on the sidewalls of which spacers are subsequently formed to reduce the distance between any of the two adjacent masking patterns. A filler material is next used to fill in the space around the masking patterns and to form filler plugs. The masking patterns and the spacers are removed using the filler plugs as a hard mask. Digit and word lines of MRAM structures are subsequently formed.
    Type: Application
    Filed: April 27, 2001
    Publication date: October 31, 2002
    Inventors: D. Mark Durcan, Gurtej Sandhu, Trung T. Doan, Roger Lee, Dennis Keller, Ren Earl
  • Method for forming minimally spaced MRAM structures
    Publication number: 20020146849
    Abstract: A method of forming minimally spaced apart MRAM structures is disclosed. A photolithography technique is employed to define patterns an integrated circuit, the width of which is further reduced by etching to allow formation of patterns used to etch digit line regions with optimum critical dimension between any of the two digit line regions. Subsequent pinned and sense layers of MRAM structures are formed over the minimally spaced digit regions.
    Type: Application
    Filed: April 10, 2001
    Publication date: October 10, 2002
    Inventors: D. Mark Durcan, Trung T. Doan, Roger Lee, Dennis Keller, Ren Earl
  • Self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure
    Publication number: 20020132375
    Abstract: This invention pertains to a method of fabricating a trenchless MRAM structure and to the resultant MRAM structure. The MRAM structure of the invention has a pinned layer formed within protective sidewalls formed over a substrate. The protective sidewalls facilitate formation of the MRAM structure by a self-aligning process.
    Type: Application
    Filed: March 15, 2001
    Publication date: September 19, 2002
    Inventors: Trung T. Doan, Roger Lee, Dennis Keller, Gurtej Sandhu, Ren Earl
  • Self-aligned, magnetoresitive random-access memory (MRAM) structure utilizing a spacer containment scheme
    Publication number: 20020105035
    Abstract: This invention pertains to a method of fabricating a MRAM structure and the resulting structure. The MRAM structure of the invention has the pinned layer recessed within a trench with the upper magnetic layer positioned over it. The method of MRAM fabrication utilizes a spacer processing technique, whereby the upper magnetic layer of the MRAM stack structure is formed between the region defined by the spacers, thereby allowing for self-alignment of the upper magnetic layer over the underlying pinned magnetic layer.
    Type: Application
    Filed: January 9, 2002
    Publication date: August 8, 2002
    Inventors: Gurtej Sandhu, Roger Lee, Dennis Keller, Trung T. Doan, Max F. Hineman, Ren Earl
  • Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme
    Patent number: 6358756
    Abstract: This invention pertains to a method of fabricating a MRAM structure and the resulting structure. The MRAM structure of the invention has the pinned layer recessed within a trench with the upper magnetic layer positioned over it. The method of MRAM fabrication utilizes a spacer processing technique, whereby the upper magnetic layer of the MRAM stack structure is formed between the region defined by the spacers, thereby allowing for self-alignment of the upper magnetic layer over the underlying pinned magnetic layer.
    Type: Grant
    Filed: February 7, 2001
    Date of Patent: March 19, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Sandhu, Roger Lee, Dennis Keller, Trung T. Doan, Max F. Hineman, Ren Earl