Abstract: Embodiments of the invention relate to compositions including a yttrium-based fluoride crystal phase, or a yttrium-based oxyfluoride crystal phase, or an oxyfluoride amorphous phase, or a combination of these materials. The compositions may be used to form a solid substrate for use as a semiconductor processing apparatus, or the compositions may be used to form a coating which is present upon a surface of substrates having a melting point which is higher than about 1600°, substrates such as aluminum oxide, aluminum nitride, quartz, silicon carbide and silicon nitride, by way of example.

Abstract: A solid solution-comprising ceramic article useful in semiconductor processing, which article may be in the form of a solid, bulk ceramic, or may be in the form of a substrate having a ceramic coating of the same composition as the bulk ceramic material on at least one outer surface. The ceramic article is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The ceramic-comprising article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 91 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 9 mole %.

Abstract: Embodiments of the disclosure generally relate to heated substrate supports having a protective coating thereon. The protective coating is formed from pure yttria or alloys predominantly of yttria. The protective coating is diffusion bonded to the heater plate of the substrate support. Two distinct silicon containing layers are formed between the heater plate and the protective coating as the result of the diffusion bonding.

Abstract: A bonded ceramic component which is resistant to reactive halogen-containing plasmas, said component comprising ceramic portions which are bonded together by a bonding material which includes an oxyfluoride glass-ceramic-comprising transition area between interfaces of the ceramic portions, where the transition area includes form at least 0.1 volume % amorphous phase up to about 50 volume % amorphous phase.

Abstract: A bonded ceramic component which is resistant to reactive halogen-containing plasmas, said component comprising ceramic portions which are bonded together by a bonding material which includes an oxyfluoride glass-ceramic-comprising transition area between interfaces of the ceramic portions, where the transition area includes from at least 0.1 volume % amorphous phase up to about 50 volume % amorphous phase.

Abstract: Embodiments disclosed herein generally relate to systems and methods to prevent free radical damage to sensitive components in a process chamber and optimizing flow profiles. The processing chamber utilizes a cover substrate on lift pins and an inert bottom purge flow to shield the substrate support from halogen reactants. During a clean process, the cover substrate and the purge flow restricts halogen reactants from contacting the substrate support. The method of cleaning includes placing a cover substrate on a plurality of lift pins that extend through a substrate support in a processing chamber, raising the cover substrate via the lift pins to expose a space between the cover substrate and the substrate support, supplying a halogen containing gas into the processing chamber, supplying a second gas through an opening in the processing chamber, and flowing the second gas through the space between the cover substrate and the substrate support.

Abstract: A bulk, sintered solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The bulk, sintered solid solution-comprising article is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

Abstract: A heated support assembly is disclosed which includes a body comprising aluminum nitride doped with magnesium oxide having a volume resistivity of about 1×1010 ?-cm at about 600 degrees Celsius, an electrode embedded in the body, and a heater mesh embedded in the body.

Abstract: Embodiments disclosed herein generally relate to a chamber liner for the high temperature processing of substrates in a processing chamber. The processing chamber utilizes an inert bottom purge flow to shield the substrate support from halogen reactants such that the substrate support may be heated to temperatures greater than about 650 degrees Celsius. The chamber liner controls a flow profile such that during deposition the bottom purge flow restricts reactants and by-products from depositing below the substrate support. During a clean process, the bottom purge flow restricts halogen reactants from contacting the substrate support. As such, the chamber liner includes a conical inner surface angled inwardly to direct purge gases around an edge of the substrate support and to reduce deposition under the substrate support and the on the edge.

Abstract: Implementations described herein generally relate to materials and coatings, and more specifically to materials and coatings for aluminum and aluminum-containing chamber components. In one implementation, a process is provided. The process comprises exposing an aluminum-containing component to a moisture thermal treatment process and exposing the aluminum-containing component to a thermal treatment process. The moisture thermal treatment process comprises exposing the aluminum-containing component to an environment having a moisture content from about 30% to about 100% at a first temperature from about 30 to about 100 degrees Celsius. The thermal treatment process comprises heating the aluminum-containing component to a second temperature from about 200 degrees Celsius to about 550 degrees Celsius to form an alumina layer on the at least one surface of the aluminum-containing component.

Abstract: A bulk, sintered solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The bulk, sintered solid solution-comprising article is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

Abstract: Methods and apparatus for bonding an electrostatic chuck to a component of a substrate support are provided herein. In some embodiments, an adhesive for bonding components of a substrate support may include a matrix of silicon-based polymeric material having a filler dispersed therein. The silicon based polymeric material may be a polydimethylsiloxane (PDMS) structure having a molecular weight with a low molecular weight (LMW) content ? D3-D10 of less than about 500 ppm. In some embodiments, the filler may comprise between about 50 to about 70 percent by volume of the adhesive layer. In some embodiments, the filler may comprise particles of aluminum oxide (Al2O3), aluminum nitride (AlN), yttrium oxide (Y2O3), or combinations thereof. In some embodiments, the filler may comprise particles having a diameter of about 10 nanometers to about 10 microns.

Abstract: Embodiments of the present disclosure generally provide chamber components with enhanced thermal properties and methods of enhancing thermal properties of chamber components including bonding materials. One embodiment of the present disclosure provides a method for fabricating a composite structure. The method includes applying a bonding material to a first component, and converting the bonding material applied to the first component to an enhanced bonding layer by heating the bonding material to outgas volatile species from the bonding material. The outgassed volatile species accumulates to at least 0.05% in mass of the bonding material. The method further includes contacting a second component and the enhanced bonding layer to join the first and second components.

Abstract: Embodiments of the present invention generally relate to heated substrate supports having a protective coating thereon. The protective coating is formed from yttrium oxide at a molar concentration ranging from about 50 mole percent to about 75 mole percent; zirconium oxide at a molar concentration ranging from about 10 mole percent to about 30 mole percent; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole percent to about 30 mole percent. The alloying of yttrium oxide with a compatible oxide improves wear resistance, flexural strength, and fracture toughness of the protective coating, relative to pure yttrium oxide.

Abstract: Methods and apparatus for bonding an electrostatic chuck to a component of a substrate support are provided herein. In some embodiments, an adhesive for bonding components of a substrate support may include a matrix of silicon-based polymeric material having a filler dispersed therein. The silicon based polymeric material may be a polydimethylsiloxane (PDMS) structure having a molecular weight with a low molecular weight (LMW) content ? D3-D10 of less than about 500 ppm. In some embodiments, the filler may comprise between about 50 to about 70 percent by volume of the adhesive layer. In some embodiments, the filler may comprise particles of aluminum oxide (Al2O3), aluminum nitride (AlN), yttrium oxide (Y2O3), or combinations thereof. In some embodiments, the filler may comprise particles having a diameter of about 10 nanometers to about 10 microns.

Abstract: Embodiments of the invention relate to compositions including a yttrium-based fluoride crystal phase, or a yttrium-based oxyfluoride crystal phase, or an oxyfluoride amorphous phase, or a combination of these materials. The compositions may be used to form a solid substrate for use as a semiconductor processing apparatus, or the compositions may be used to form a coating which is present upon a surface of substrates having a melting point which is higher than about 1600°, substrates such as aluminum oxide, aluminum nitride, quartz, silicon carbide and silicon nitride, by way of example.

Abstract: Embodiments described herein generally relate to apparatus and methods for thermally treating chamber components for use in ultraviolet semiconductor processing chambers. Thermal treatment of chamber components comprising unitary ceramic or glass articles may reduce the probability of particle generation when the chamber components are exposed to corrosive environments, such as exposure to ultraviolet light and ozone/oxygen radicals. A method of thermally treating chamber components includes heating the unitary article at an acceptable ramp rate to a desired temperature for a desired time period and subsequently cooling the unitary article at the ramping rate.

Abstract: To manufacture a ceramic coated article, at least one surface of a conductive article is roughened to a roughness of approximately 100 micro-inches (?in) to approximately 300 ?in. The conductive article may then be heated and coated with a ceramic coating comprising a yttrium containing oxide to a thickness of approximately 10-40 mil.

Abstract: In one embodiment, a processing chamber is disclosed wherein at least one surface of the processing chamber has a coating comprising SivYwMgxAlyOz, wherein v ranges from about 0.0196 to 0.2951, w ranges from about 0.0131 to 0.1569, x ranges from about 0.0164 to 0.0784, y ranges from about 0.0197 to 0.1569, z ranges from about 0.5882 to 0.6557, and v+w+x+y+z=1.

Abstract: A heat treated ceramic article includes a ceramic substrate and a ceramic coating on the ceramic substrate. The ceramic coating is a non-sintered ceramic coating that has a different composition than the ceramic substrate. The heat treated ceramic article further includes a transition layer between the ceramic substrate and the ceramic coating, the transition layer comprising first elements from the ceramic coating that have reacted with second elements from the ceramic substrate, wherein the transition layer has a thickness of about 0.1 microns to about 5 microns.