Abstract: The present invention is related to a method of providing n-doped group III-V materials grown on (111) Si, and especially to a method comprising steps of growth of group III-V materials interleaved with steps of no growth, wherein both growth steps and no growth steps are subject to a constant uninterrupted arsenic flux concentration.

Abstract: The present invention relates to a method of manufacturing semiconductor materials comprising interface layers of group III-V materials in combination with Si substrates. Especially the present invention is related to a method of manufacturing semiconductor materials comprising GaAs in combination with Si(111) substrates, wherein residual strain due to different thermal expansion coefficient of respective materials is counteracted by introducing added layer(s) compensating the residual strain.

Abstract: The present invention relates to a method of manufacturing semiconductor materials comprising interface layers of group III-V materials in combination with Si substrates. Especially the present invention is related to a method of manufacturing semiconductor materials comprising GaAs in combination with Si(111) substrates, wherein residual strain due to different thermal expansion coefficient of respective materials is counteracted by introducing added layer(s) compensating the residual strain.

Abstract: The present invention relates to a method for manufacturing semiconductor materials comprising epitaxial growing of group III-V materials, for example gallium arsenide (GaAs), on for example a non III-V group material like silicon (Si) substrates (wafers), and especially to pre-processing steps providing a location stabilization of dislocation faults in a surface layer of the non III-V material wafer in an orientation relative to an epitaxial material growing direction during growing of the III-V materials, wherein the location stabilized dislocation fault orientations provides a barrier against threading dislocations (stacking of faults) from being formed in the growing direction of the III-V materials during the epitaxial growth process.

Abstract: The present invention relates to a method for manufacturing semiconductor materials comprising epitaxial growing of group III-V materials, for example gallium arsenide (GaAs), on for example a non III-V group material like silicon (Si) substrates (wafers), and especially to pre-processing steps providing a location stabilisation of dislocation faults in a surface layer of the non III-V material wafer in an orientation relative to an epitaxial material growing direction during growing of the III-V materials, wherein the location stabilised dislocation fault orientations provides a barrier against threading dislocations (stacking of faults) from being formed in the growing direction of the III-V materials during the epitaxial growth process.

Abstract: The invention relates to measurement of chemical spillage, such as oil spillage, by the use of one or more IR-lasers, necessary optics and optical sensors. The measurements are performed by reflecting the emitted light from the laser(s) back from the chemical and registered by optical sensors. To accurately detecting the chemical the system utilizes at least three different wavelengths which are emitted from one or more lasers. The wavelengths are chosen so that the reflection from the chemical is different for at least three of these, and that it can be distinguished from the background.

Abstract: The invention relates to design of an interferometric laser and a method for analyzing gas with this, preferably methane, ethane, propane, butane, pentane, hexane, heptane, ethylene, dichloromethane, isooctane, benzene, xylenes, hydrazine, formaldehyde, N2O, NO2, CO2, CO, HF, O3, HI, NH3, SO, HBr, H2S, HCN, preferably a tunable interferometric laser which can sweep a spectrum.

Abstract: The present invention relates to a wet acid etchant for wet acid etching of intrinsic, n-doped or p-doped Al1-x-zGaxInzAs1-ySby with 0<x<1, 0<y<1, 0?z<1 and 0<x+z<1, a process for wet acid etching of intrinsic, n-doped or p-doped Al1-x-zGaxInzAs1-ySby with 0<x<1, 0<y<1 and 0?z<1 and 0<x+z<1, and a semiconductor structure prepared by wet acid etching of Al1-x-zGaxInzAs1-ySby with 0<x<1, 0<y?1, 0?z<1 and 0<x+z<1. The etchant comprises: organic acid; oxidizing agent; hydrofluoric acid.

Abstract: Method and system for measuring/depicting and determining/identifying one or more objects of different types of plastics, different types of fabrics or clothing, different types of glass, different types of food/groceries, different types of cardboard/paper/wooden products and/or different types of metals or similar materials. The method includes considering the reflected, scattered and/or transmitted light from the laser through the material, and determining the type of material from this.

Abstract: The invention relates to the design and processing of a semiconductor optical device. The device is formed of at least four layers of III-V compounds in which one consists of the penternary AlGaInAsSb material. The structure is wet etched in order to form optical ridge waveguides. One such device has incorporated two waveguides which are connected through a new junction design which can be made by wet etching. In one design the junction and waveguides consists of wet etched AlO.90GaO.10AsSb cladding around a core of AlO.28GaO.72AsSb in which an active layer composed of AlO.22InO.22GaO.55AsSb/InO.29GaO.71AsSb quantum wells is embedded. The resulting device is a erdge junction laser which has single mode emission and emits a narrow line width. We made and tested a device in the 2.34 müm to 2.375 müm wavelength area and found it to have an emission line width of around 0.5 nm.

Abstract: A method is shown for the analysis of hydrocarbon based fuels comprising the following steps: a) the use of a tunable diode laser (TDL) whereby several wavelengths of light can be emitted, b). transmission of said light through a transparent flow cell or flow chamber containing the fuel, c). measurement of the transmitted light with an optical detector positioned on the opposite site of the cell/chamber, d). detection of signals and storage on a computer memory, e). computer-based analysis of measurements, f). use of an algorithm and a chemical reference library for subsequent quantitative analysis of the hydrocarbon compounds.

Abstract: The invention relates to the design and processing of a semiconductor optical device. The device is formed of at least four layers of III-V compounds in which one consists of the penternary AlGalnAsSb material. The structure is wet etched in order to form optical ridge waveguides. One such device has incorporated two waveguides which are connected through a new junction design which can be made by wet etching. In one design the junction and waveguides consists of wet etched AlO .90GaO .10AsSb cladding around a core of AlO .28GaO .72AsSb in which an active layer composed of AlO.22InO.22GaO.55AsSb/InO.29GaO.71AsSb quantum wells is embedded. The resulting device is a erdge junction laser which has single mode emission and emits a narrow line width. We made and tested a device in the 2.34 müm to 2.375 müm wavelength area and found it to have an emission line width of around 0, 5 nm.

Abstract: The subject invention relates to a new alarm which is based on using a quarternary tunable Mid-IR laser to measure both particles and gas at the same time. The measurement is done within an area of which the gas of interest will absorb the Mid-IR radiation. By widely tuning the emission wavelength of the laser, several wavelengths can be measured in order to accurately find both gas composition and particle density with one laser based sensor. We tested a new device which use radiation between 2.27 ?m and 2.316 ?m. Methane gas reduces intensity of the radiation at certain wavelengths in this device, while particles/fog reduce intensity for all wavelengths. In this case, fog should not trigger an alarm, while methane leaks should. This can also be applied for CO and smoke in which one sensor will measure both parameters to sound an alarm instead of just one parameter.

Abstract: The present invention relates to a wet acid etchant for wet acid etching of intrinsic, n-doped or p-doped Al1?x?zGaxInzAs1?ySby with 0<x<1, 0<y<1, 0?z<1 and 0<x+z<1, a process for wet acid etching of intrinsic, n-doped or p-doped Al1?x?zGaxInzAs1?ySby with 0<x<1, 0<y<1, 0?z<1 and 0<x+z<1, and a semiconductor structure prepared by wet acid etching of Al1?x?zGaxInzAs1?ySby with 0<x<1, 0<y<1, 0?z<1 and 0<x+z<1. The etchant comprises: organic acid; oxidizing agent; hydrofluoric acid.