Patents by Inventor Rene George
Rene George has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240135974Abstract: A method includes obtaining lyrics text and audio for a media item and generating, using a first encoder, a first plurality of embeddings representing symbols that appear in the lyrics text for the media item. The method includes generating, using a second encoder, a second plurality of embeddings representing an acoustic representation of the audio for the media item. The method includes determining respective similarities between embeddings of the first plurality of embeddings and embeddings of the second plurality of embeddings and aligning the lyrics text and the audio for the media item based on the respective similarities. The method includes, while streaming the audio for the media item, providing, for display, the aligned lyrics text with the streamed audio.Type: ApplicationFiled: June 25, 2023Publication date: April 25, 2024Inventors: Simon René Georges DURAND, Daniel STOLLER
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Patent number: 11959169Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.Type: GrantFiled: September 30, 2022Date of Patent: April 16, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Kartik Shah, Hansel Lo, Tobin Kaufman-Osborn, Rene George, Lara Hawrylchak, Erika Hansen
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Patent number: 11885021Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.Type: GrantFiled: May 11, 2021Date of Patent: January 30, 2024Assignee: Applied Materials, Inc.Inventors: Kartik Shah, Vishwas Kumar Pandey, Kailash Pradhan, Sairaju Tallavarjula, Rene George, Eric Kihara Shono, Philip A. Bottini, Roger Curtis
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Patent number: 11854770Abstract: Embodiments of the present disclosure generally relate to inductively coupled plasma sources, plasma processing apparatus, and independent temperature control of plasma processing. In at least one embodiment, a method includes introducing a process gas into a gas injection channel and generating an inductively coupled plasma within the gas injection channel. The plasma includes at least one radical species selected from oxygen, nitrogen, hydrogen, NH and helium. The method includes delivering the plasma from the plasma source to a process chamber coupled therewith by flowing the plasma through a separation grid between the plasma source and a substrate. The method includes processing the substrate. Processing the substrate includes contacting the plasma including the at least one radical species with a first side of the substrate facing the separation grid and heating the substrate using a plurality of lamps located on a second side of the substrate opposite the separation grid.Type: GrantFiled: January 14, 2021Date of Patent: December 26, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Wei Liu, Vladimir Nagorny, Rene George
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Publication number: 20230411121Abstract: A system, method, and apparatus for processing substrates. A plasma processing system includes a processing chamber and a support structure disposed within the processing chamber. The support structure forms a set of ducts. The plasma processing system further includes a plurality of plasma generation cells disposed within corresponding ducts of the set of ducts. The plasma generation cells are configured to be selectively activated or deactivated. The plasma generating structure supplies plasma related fluxes to a region of the processing chamber responsive to being activated. The plasma processing system further includes a network of electrical connectors coupled to each of the plurality of plasma generation cells. The network of electrical connectors are configured to supply electrical signals that selectively activate or deactivate individual plasma generation cells.Type: ApplicationFiled: June 16, 2022Publication date: December 21, 2023Inventors: Vladimir Nagorny, Rene George
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Publication number: 20230411122Abstract: A system, method, and apparatus for processing substrates. A plasma generation assembly includes a support structure configured to be disposed within a processing chamber, the support structure forming a set of ducts. The plasma generation assembly further includes a plasma generation cell selectively removable from and selectively replaceable within one of set of ducts. The plasma generation cell includes a dielectric barrier discharge (DBD) structure. The DBD structure includes a set of electrodes disposed along a first dielectric surface and covered by a second dielectric layer. The DBD structure is configured to initiate plasma discharge within the processing chamber. The DBD structure further includes electrical terminals coupled the DBD structure with an electric driving network.Type: ApplicationFiled: June 16, 2022Publication date: December 21, 2023Inventors: Vladimir Nagorny, Rene George
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Publication number: 20230369017Abstract: Embodiments of the present disclosure generally relate to inductively coupled plasma sources and plasma processing apparatus. In at least one embodiment, plasma source includes a first sidewall and a gas injection insert defining a plasma source interior volume. The gas injection insert includes a peripheral gas injection port, a second sidewall disposed concentric with the first sidewall, and a center gas injection port. The plasma source includes a first induction coil disposed proximate the first sidewall and disposed around the first sidewall. The plasma source includes a first radio frequency power generator coupled with the first induction coil. The plasma source includes a second induction coil disposed proximate the second sidewall and disposed around the second sidewall. The plasma source includes a second radio frequency power generator coupled with the second induction coil.Type: ApplicationFiled: May 19, 2023Publication date: November 16, 2023Inventors: Vladimir NAGORNY, Wei LIU, Rene GEORGE
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Publication number: 20230215702Abstract: A system, method, and apparatus for processing substrates. A plasma processing system includes a processing chamber having a chamber body having walls with a first material enclosing an interior volume. The plasma processing system further includes a plasma source designed to expose a substrate disposed within the processing chamber to plasma related fluxes. The first material has a first set of recombination coefficients associated with the plasma related fluxes. The plasma processing system further includes a second material disposed along a first region of the chamber body, the first material having a second set of plasma recombination coefficients associated with the plasma related fluxes. The second set of plasma recombination coefficients is different that the first set of plasma recombination coefficients.Type: ApplicationFiled: December 30, 2021Publication date: July 6, 2023Inventors: Vladimir Nagorny, Rene George, Wei Liu
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Publication number: 20230207291Abstract: A method and apparatus for growing an oxide layer within a feature of a substrate is described herein. The method is suitable for use in semiconductor manufacturing. The oxide layer is formed by exposing a substrate to both a high pressure oxidant exposure and a lower pressure oxygen containing plasma exposure. The high pressure oxidant exposure is performed at a pressure of greater than 10 Torr, while the lower pressure oxygen containing plasma exposure is performed at a pressure of less than about 10 Torr. The features are high-aspect ratio trenches or holes within a stack of silicon oxide and silicon nitride layers.Type: ApplicationFiled: April 8, 2022Publication date: June 29, 2023Inventors: Christopher S. OLSEN, Rene GEORGE, Tsung-Han YANG, David KNAPP, Lara HAWRYLCHAK
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Patent number: 11658006Abstract: Embodiments of the present disclosure generally relate to inductively coupled plasma sources and plasma processing apparatus. In at least one embodiment, plasma source includes a first sidewall and a gas injection insert defining a plasma source interior volume. The gas injection insert includes a peripheral gas injection port, a second sidewall disposed concentric with the first sidewall, and a center gas injection port. The plasma source includes a first induction coil disposed proximate the first sidewall and disposed around the first sidewall. The plasma source includes a first radio frequency power generator coupled with the first induction coil. The plasma source includes a second induction coil disposed proximate the second sidewall and disposed around the second sidewall. The plasma source includes a second radio frequency power generator coupled with the second induction coil.Type: GrantFiled: January 14, 2021Date of Patent: May 23, 2023Assignee: Applied Materials, Inc.Inventors: Vladimir Nagorny, Wei Liu, Rene George
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Publication number: 20230033827Abstract: A system and method including a processing device. The processing device receives data including one or more plasma exposure durations of a plasma process. The plasma exposure duration are associated with a set of controlled elements. The processing device causes a each set of controlled elements to switch between a first mode of operation and a second mode of operation. Each set of controlled elements expose appropriate portion of a substrate to the plasma related fluxes. The first set of controlled elements process the substrate at an increased rate while operating in the first mode of operation relative to the second mode of operation. The processing device causes each set of controlled elements to operate in the first mode of operation for the appropriate time duration based on the received plasma exposure duration data.Type: ApplicationFiled: July 21, 2021Publication date: February 2, 2023Inventors: Vladimir Nagorny, Rene George
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Publication number: 20230028054Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.Type: ApplicationFiled: September 30, 2022Publication date: January 26, 2023Inventors: Eric Kihara SHONO, Vishwas Kumar PANDEY, Christopher S. OLSEN, Kartik SHAH, Hansel LO, Tobin KAUFMAN-OSBORN, Rene GEORGE, Lara HAWRYLCHAK, Erika HANSEN
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Publication number: 20220411927Abstract: Embodiments described herein generally relate to a processing system and a method of delivering a reactant gas. The processing system includes a substrate support system, an injection cone, and an intake. The injection cone includes a linear rudder. The linear rudder is disposed such that the flow of reactant gas through the injection cone results in film growth on a specific portion of a substrate. The method includes flowing the gas through the injection cone and delivering the gas onto the substrate below. The localization of the reactant gas, allows for film growth on a specific portion of the substrate.Type: ApplicationFiled: September 9, 2020Publication date: December 29, 2022Inventors: Vishwas Kumar PANDEY, Christopher OLSEN, Rene GEORGE, Eric SHONO, Lara HAWRYLCHAK, Erika HANSEN, Tobin KAUFMAN-OSBORN, Hansel LO, Kartik SHAH
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Patent number: 11529592Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.Type: GrantFiled: July 1, 2021Date of Patent: December 20, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Vishwas Kumar Pandey, Lara Hawrylchak, Eric Kihara Shono, Kartik Shah, Christopher S. Olsen, Sairaju Tallavarjula, Kailash Pradhan, Rene George, Johanes F. Swenberg, Stephen Moffatt
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Patent number: 11486038Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions do not intersect a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.Type: GrantFiled: January 29, 2020Date of Patent: November 1, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Kartik Shah, Hansel Lo, Tobin Kaufman-Osborn, Rene George, Lara Hawrylchak, Erika Hansen
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Patent number: 11475887Abstract: An electronic device receives audio data for a media item. The electronic device generates, from the audio data, a plurality of samples, each sample having a predefined maximum length. The electronic device, using a neural network trained to predict textal unit probabilities, generates a probability matrix of textual units for a first portion of a first sample of the plurality of samples. The probability matrix includes information about textual units, timing information, and respective probabilities of respective textual units at respective times. The electronic device identifies, for the first portion of the first sample, a first sequence of textual units based on the generated probability matrix.Type: GrantFiled: November 21, 2019Date of Patent: October 18, 2022Assignee: Spotify ABInventors: Daniel Stoller, Simon René Georges Durand, Sebastian Ewert
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Publication number: 20220223383Abstract: Embodiments of the present disclosure generally relate to a process chamber for conformal oxidation of high aspect ratio structures. The process chamber includes a liner assembly that in one embodiment includes a body including a first opening and a second opening opposing the first opening, wherein the opening comprises a first end and a second end opposing the first end, and a flow valve disposed between the first opening and the second opening, the flow valve coupled to the body by a rotatable shaft that provides movement of the flow valve in angles between about 0 degrees and about 90 degrees relative to a central axis of the processing chamber.Type: ApplicationFiled: March 13, 2020Publication date: July 14, 2022Inventors: Eric Kihara SHONO, Vishwas Kumar PANDEY, Hansel LO, Christopher S. OLSEN, Tobin KAUFMAN-OSBORN, Tobin MAN-OSBORN, Rene GEORGE, Lara HAWRYLCHAK
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Publication number: 20220223381Abstract: Embodiments of the present disclosure generally relate to inductively coupled plasma sources, plasma processing apparatus, and independent temperature control of plasma processing. In at least one embodiment, a method includes introducing a process gas into a gas injection channel and generating an inductively coupled plasma within the gas injection channel. The plasma includes at least one radical species selected from oxygen, nitrogen, hydrogen, NH and helium. The method includes delivering the plasma from the plasma source to a process chamber coupled therewith by flowing the plasma through a separation grid between the plasma source and a substrate. The method includes processing the substrate. Processing the substrate includes contacting the plasma including the at least one radical species with a first side of the substrate facing the separation grid and heating the substrate using a plurality of lamps located on a second side of the substrate opposite the separation grid.Type: ApplicationFiled: January 14, 2021Publication date: July 14, 2022Inventors: Wei Liu, Vladimir Nagorny, Rene George
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Publication number: 20220223374Abstract: Embodiments of the present disclosure generally relate to inductively coupled plasma sources and plasma processing apparatus. In at least one embodiment, plasma source includes a first sidewall and a gas injection insert defining a plasma source interior volume. The gas injection insert includes a peripheral gas injection port, a second sidewall disposed concentric with the first sidewall, and a center gas injection port. The plasma source includes a first induction coil disposed proximate the first sidewall and disposed around the first sidewall. The plasma source includes a first radio frequency power generator coupled with the first induction coil. The plasma source includes a second induction coil disposed proximate the second sidewall and disposed around the second sidewall. The plasma source includes a second radio frequency power generator coupled with the second induction coil.Type: ApplicationFiled: January 14, 2021Publication date: July 14, 2022Inventors: Vladimir NAGORNY, Wei LIU, Rene GEORGE
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Publication number: 20220165547Abstract: Provided herein is a gas source comprising a flow conduit having an interior volume and an open end, a remote plasma source fluidly coupled to the flow conduit, a secondary gas source extending inwardly of the interior volume of the flow conduit, the secondary gas source including at least one gas port therein positioned to flow a secondary gas inwardly of the interior volume of the flow conduit.Type: ApplicationFiled: November 24, 2020Publication date: May 26, 2022Inventors: Vishwas Kumar PANDEY, Eric Kihara SHONO, Christopher S. OLSEN, Tobin KAUFMAN-OSBORN, Erika HANSEN, Rene GEORGE, Lara HAWRYLCHAK, Hansel LO, Kartik Bhupendra SHAH