Abstract: A device for producing a silicon carbide (SiC) single crystal contains a crucible having a storage region for holding a stock of solid SiC and having a crystal region for holding a SiC seed crystal. An insert made from glassy carbon is disposed in the crucible. In the method, solid SiC is sublimed as a result of the stock being heated and SiC in the gas phase is generated, which is conveyed to the SiC seed crystal, on which it grows as an SiC single crystal. A heat flux is controlled by an insert made from glassy carbon.

Abstract: A method is described for growing at least one silicon carbide (SiC) single crystal by sublimation of a SiC source material. Silicon, carbon and a SiC seed crystal are introduced into a growing chamber. Then, the SiC source material is produced from the silicon and the carbon in a synthesis step that takes place before the actual growing. The growing of the SiC single crystal is then carried out immediately after the synthesis step. The carbon used is a C powder with a mean grain diameter of greater than 10 &mgr;m.

Abstract: A device for producing a silicon carbide (SiC) single crystal contains a crucible having a storage region for holding a stock of solid SiC and having a crystal region for holding a SiC seed crystal. An insert made from glassy carbon is disposed in the crucible. In the method, solid SiC is sublimed as a result of the stock being heated and SiC in the gas phase is generated, which is conveyed to the SiC seed crystal, on which it grows as an SiC single crystal. A heat flux is controlled by an insert made from glassy carbon.

Abstract: A seed crystal assembly for producing monocrystals and a method for producing SiC monocrystals or monocrystalline SiC layers include a seed crystal with a surface having a first partial region intended as a crystallization surface for a monocrystal grown out of a gas phase and a second partial region with a coating that is chemically resistant to the seed crystal and to the gas phase and does not melt at the growth temperatures. As a result, thermal degradation of the seed crystal is avoided and the quality of the monocrystals which are produced is increased.

Abstract: A method for producing cubic SiC monocrystals includes dissolving SiC powder or other starting material in a solvent at high overpressures and growing the monocrystals on a seed crystal.

Abstract: A CVD process or a sublimation process for doping an SiC monocrystal uses an organic boron compound whose molecules contain at least one boron atom chemically bonded to at least one carbon atom. Boron trialkyls are preferred organic boron compounds.

Abstract: A MISFET (metal-insulator semiconductor field-effect transistor) may be used for application at temperatures above 200.degree. C. In particular, leakage currents between the gate electrode (6) and the drain (8) are kept at a low level, and a considerable rate of rise in its control characteristic is achieved. An insulating layer (4) of diamond is arranged between the gate electrode (6) and a semiconductor (2) having a larger energy gap than silicon (Si).

Abstract: The invention provides an improved method for polish-etching of silicon carbide, which is arranged in series with an electrolyte and a metallic counter-electrode in a current circuit with an adjustable direct voltage, wherein an alkaline solution is used as the electrolyte, preferably in a high concentration and at great current density. In this way, uniform removal of the material and an even surface are obtained.

Abstract: Single crystals of silicon carbide (SiC) can be manufactured by subliming and partially decomposing a base material of crystalline silicon carbide powder and by growing the single crystals from seed crystals. According to the present invention, an excess of silicon is added to the silicon carbide base material. Using this technique, high purity, single-crystal silicon carbide is obtained.