Abstract: This invention provides fundamental science and novel device architectures for surface plasmon (SP)-based, complementary metal oxide semiconductor (CMOS)-compatible, optical elements such as modulators, couplers, and switches. The primary focus of the work is on waveguides based on an ultra-long-range surface plasmon (ULRSP) waveguide mode recently discovered by our team. This mode exists at the metal-dielectric interfaces in a silicon-oxide-metal-silicon layer structure. While initial work focuses on noble metals to support the ULRSP, our analysis shows Si processing-compatible metals such as Cu and Al can also be used. Our modeling has also shown that variation in the thickness of the oxide layer can be used to give unprecedented propagation lengths in such structures. Electrically-induced free carrier modulation of the dielectric constant in the Si adjacent to the oxide can modulate the waveguide properties allowing novel Si-compatible electro-optic devices to be created.

Abstract: This invention provides fundamental science and novel device architectures for surface plasmon (SP)-based, complementary metal oxide semiconductor (CMOS)-compatible, optical elements such as modulators, couplers, and switches. The primary focus of the work is on waveguides based on an ultra-long-range surface plasmon (ULRSP) waveguide mode recently discovered by our team. This mode exists at the metal-dielectric interfaces in a silicon-oxide-metal-silicon layer structure. While initial work focuses on noble metals to support the ULRSP, our analysis shows Si processing-compatible metals such as Cu and Al can also be used. Our modeling has also shown that variation in the thickness of the oxide layer can be used to give unprecedented propagation lengths in such structures. Electrically-induced free carrier modulation of the dielectric constant in the Si adjacent to the oxide can modulate the waveguide properties allowing novel Si-compatible electro-optic devices to be created.

Abstract: A plasmon enhanced near-field optical probe has an optical coupler with an end face and a metal coating forming at least one plasmon enhancement structure. An extension provides probe-to-sample separation feedback. A microscope cantilever has a lever arm with an aperture, a tip to provide tip-to-sample separation feedback, and a plasmon enhancement structure. An air bearing slider apparatus has a base, air bearing slider pads, and a metal film forming a plasmon enhancement structure about an aperture. A plasmon enhanced optical probe end cap has a socket with an entry aperture for an optical fiber and an exit aperture with a plasmon enhanced transmission structure. A positioning subsystem has a piezoelectric member that adjusts a length of the positioning subsystem, and a quadranted piezo device that adjusts a position of the positioning subsystem.

Abstract: An edge emitting laser combines many of the desirable attributes of the common forms of surface-emitting and edge-emitting laser structures together with elimination of their drawbacks. The laser cavity of a device according to the present invention is short (on the order of the wavelength of light in the cavity medium) and current is injected into the optical cavity substantially perpendicular to the plane of emitted light and parallel to the plane of reflective mirrors. The use of a short optical cavity permits single mode laser operation because of broad mode to mode spacing and large changes in reflectivity between wavelengths. Injecting current into the cavity perpendicular to the direction of light emission provides low power operation because the resistance associated with the injected current is low. The resistance is low because current does not cross boundaries between the different material layers forming the reflective mirrors and the optical cavity.

Abstract: A method of modulating light incident to a semiconductor body comprising the steps of: coupling the incident light to the surface plasmon polariton mode at an interface of the semiconductor body; and selectively altering the absorption of the incident light by the semiconductor body so as to decouple the incident light from the surface plasmon polariton mode. The absorption can be selectively altered by establishing a quantum confined optical absorption region within the semiconductor body, and effecting a Stark shift of the quantum confined optical absorption region.