Abstract: A probe card assemblage for simultaneously testing one or more integrated circuit chips including an interposer having on one surface a plurality of protruding contact elements for electrically contacting one or more chips of a wafer positioned atop a layer of compliant material, and arrayed in a pattern corresponding to a chip pads, a series of conductive vias through the electrically insulating interposer which connect the chip contact elements with an arrangement of leads terminating in a universal arrangement of connectors on the second surface, and a probe card with connectors mating to those on the interposer. The connectors on the interposer is secured are secured to those on the probe card, thereby providing a vertical probe assemblage which makes use of ultrasonic energy to minimize scrub or over travel. The universal probe card is specific to a tester configuration and common to a family of circuits to be tested.

Abstract: A probe card apparatus comprising a rigid substrate having thermal expansion characteristics near that of silicon, laminated with a flex film having laser patterned leads and contact pads, and contact elements comprising noble metals protruding from two major surfaces, the first mirroring the closely spaced chip pads, and the second aligned to the more generously spaced probe card pads, providing an accurate and reproducible, low cost, rapidly fabricated probe contact device, capable of contacting very high density bond pads in either area array or perimeter locations, of being electrically optimized, and readily maintained.

Abstract: A conductive via pattern (110) between the uppermost metal interconnect layer (Mn) and next underlying metal interconnect layer (Mn−1) in the bond pad areas strengthens the interlevel dielectric (ILD3) between metal layers (Mn and Mn−1). The conductive via layer (110) may, for example, comprise parallel rails (114) or a grid of cross-hatch rails (116). By spreading the stress concentration laterally, the conductive via layer (110) inhibits micro-cracking from stress applied to the bond pad (112).

Abstract: A conductive via pattern (110) between the uppermost metal interconnect layer (Mn ) and next underlying metal interconnect layer (Mn−1) in the bond pad areas strengthens the interlevel dielectric (ILD3) between metal layers (Mn and Mn−1). The conductive via layer (110) may, for example, comprise parallel rails (114) or a grid of cross-hatch rails (116). By spreading the stress concentration laterally, the conductive via layer (110) inhibits micro-cracking from stress applied to the bond pad (112).