Abstract: Interaction of acoustic waves in a piezoelectric-semiconductor resonant cavity with the charge carriers in the semiconductor layer can be directed toward amplification of the acoustic waves; such amplification scheme can be applied in building unilateral amplifiers, zero loss filters, oscillators, high detection range circuit-less wireless sensors, isolators, duplexers, circulators and other acoustic devices. An apparatus for acoustoelectric amplification is described. The apparatus includes a semiconductor layer and a thin piezoelectric layer bonded (or deposited) onto the semiconductor layer forming an acoustic cavity. Two or more tethers forming a current conduction path through the semiconductor layer and two or more access pads to silicon are positioned on two ends of the acoustic cavity and configured to inject a DC current in the semiconductor layer.

Abstract: Interaction of acoustic waves in a piezoelectric-semiconductor resonant cavity with the charge carriers in the semiconductor layer can be directed toward amplification of the acoustic waves; such amplification scheme can be applied in building unilateral amplifiers, zero loss filters, oscillators, high detection range circuit-less wireless sensors, isolators, duplexers, circulators and other acoustic devices. An apparatus for acoustoelectric amplification is described. The apparatus includes a semiconductor layer and a thin piezoelectric layer bonded (or deposited) onto the semiconductor layer forming an acoustic cavity. Two or more tethers forming a current conduction path through the semiconductor layer and two or more access pads to silicon are positioned on two ends of the acoustic cavity and configured to inject a DC current in the semiconductor layer.

Abstract: A system and method for converting a radio frequency (RF) to a direct current (DC) signal by generating acoustic phonons from the received RF signal utilizing a piezoelectric material. The acoustic phonons of the RF signal interact with the electrons of a semiconductive material to generate a DC signal that is proportional to the power of the RF signal. The DC signal can be used to power devices or can be interpreted as a measure of a local RF frequency spectrum.

Abstract: A microelectromechanical system (MEMS) sensor includes a substrate having a piezoelectric layer thereon; a MEMS piezoelectric resonator including a reference electrode on a first side of the piezoelectric layer, a first port (port 1) including a capacitor coupling electrode on a side of the piezoelectric layer opposite the first side, and a second port (port 2) for excitation signal coupling including another electrode on the side opposite the first side. The MEMS piezoelectric resonator has a natural resonant frequency. A variable capacitor on the substrate is positioned lateral to the MEMS piezoelectric resonator having a first and a second plate are connected to port 1. An antenna or an oscillator circuit is connected to port 2. Responsive to a physical parameter a capacitance of the variable capacitor changes which changes a frequency of the MEMS piezoelectric resonator relative to the natural resonant frequency to generate a frequency shift.

Abstract: Interaction of acoustic waves in a piezoelectric-semiconductor resonant cavity with the charge carriers in the semiconductor layer can be directed toward amplification of the acoustic waves; such amplification scheme can be applied in building unilateral amplifiers, zero loss filters, oscillators, high detection range circuit-less wireless sensors, isolators, duplexers, circulators and other acoustic devices. An apparatus for acoustoelectric amplification is described. The apparatus includes a semiconductor layer and a thin piezoelectric layer bonded (or deposited) onto the semiconductor layer forming an acoustic cavity. Two or more tethers forming a current conduction path through the semiconductor layer and two or more access pads to silicon are positioned on two ends of the acoustic cavity and configured to inject a DC current in the semiconductor layer.

Abstract: A passive wireless sensor includes a substrate having at least one Microelectromechanical system (MEMS) piezoelectric resonator thereon. The MEMS piezoelectric resonator includes a piezoelectric layer between a top metal or semiconductor layer (top electrode layer) and a bottom metal or semiconductor layer (bottom electrode layer). The top electrode layer is a patterned top electrode layer including at least a first electrode for sensing an electrical signal and a second electrode for providing a ground reference. An antenna is connected to the first and/or second electrode for wirelessly transmitting the electrical signal and for receiving a wireless interrogation signal.

Abstract: A microelectromechanical system (MEMS) sensor includes a substrate having a piezoelectric layer thereon; a MEMS piezoelectric resonator including a reference electrode on a first side of the piezoelectric layer, a first port (port 1) including a capacitor coupling electrode on a side of the piezoelectric layer opposite the first side, and a second port (port 2) for excitation signal coupling including another electrode on the side opposite the first side. The MEMS piezoelectric resonator has a natural resonant frequency. A variable capacitor on the substrate is positioned lateral to the MEMS piezoelectric resonator having a first and a second plate are connected to port 1. An antenna or an oscillator circuit is connected to port 2. Responsive to a physical parameter a capacitance of the variable capacitor changes which changes a frequency of the MEMS piezoelectric resonator relative to the natural resonant frequency to generate a frequency shift.

Abstract: A passive wireless sensor includes a substrate having at least one Microelectromechanical system (MEMS) piezoelectric resonator thereon. The MEMS piezoelectric resonator includes a piezoelectric layer between a top metal or semiconductor layer (top electrode layer) and a bottom metal or semiconductor layer (bottom electrode layer). The top electrode layer is a patterned top electrode layer including at least a first electrode for sensing an electrical signal and a second electrode for providing a ground reference. An antenna is connected to the first and/or second electrode for wirelessly transmitting the electrical signal and for receiving a wireless interrogation signal.

Abstract: A thermoelectric infrared detector. The detector has an absorption platform comprising a material that increases in temperature in response to incident infrared radiation and the platform covering substantially an entire area of the detector. The detector includes a thermocouple substantially suspended from contact with a substrate by at least one arm connected to the substrate.

Abstract: A thermoelectric infrared detector. The detector includes an absorption platform comprising a material that increases in temperature in response to incident infrared radiation, the platform covering substantially an entire area of the detector. The detector includes a thermocouple substantially suspended from contact with a substrate by at least one arm connected to the substrate and a thermal connection between the absorption platform and the thermocouple.

Abstract: Periodic signal generators include an oscillator circuit, which is configured to generate a first periodic signal at an output thereof, and a piezoelectric-based microelectromechanical resonator. The resonator is configured to generate a second periodic signal at a first electrode thereof, which is electrically coupled to the oscillator circuit. A variable impedance circuit is provided, which is electrically coupled to a second electrode of the piezoelectric-based microelectromechanical resonator. The variable impedance circuit is configured to passively modify a frequency of the second periodic signal by changing an induced electromechanical stiffness in at least a portion of the piezoelectric-based microelectromechanical resonator.

Abstract: A micro-electromechanical resonator self-compensates for process-induced dimensional variations by using a resonator body having a plurality of perforations therein. These perforations may be spaced along a longitudinal axis of the resonator body, which extends orthogonal to a nodal line of the resonator body. These perforations, which may be square or similarly-shaped polygonal slots, may extend partially or entirely though the resonator body and may be defined by the same processes that are used to define the outer dimensions (e.g., length, width) of the resonator body.

Abstract: A high Q resonator device is disclosed. The device includes a substrate, a resonator tethered to the substrate by a tether, and an acoustic reflector etched into the substrate and positioned proximate the tether so as to reflect a substantial portion of planar acoustic energy received from the tether back into the tether.

Abstract: A micro-electromechanical resonator self-compensates for process-induced dimensional variations by using a resonator body having a plurality of perforations therein. These perforations may be spaced along a longitudinal axis of the resonator body, which extends orthogonal to a nodal line of the resonator body. These perforations, which may be square or similarly-shaped polygonal slots, may extend partially or entirely though the resonator body and may be defined by the same processes that are used to define the outer dimensions (e.g., length, width) of the resonator body.

Abstract: A micromechanical resonator operable in a bulk acoustic mode includes a resonator apparatus suspended over a substrate by a plurality of pairs of anchors. The resonator apparatus includes a conductive metal layer, a piezoelectric layer on the conductive metal layer and a plurality of interdigitated electrodes on the piezoelectric layer. The interdigitated electrodes are configured so that a total number of electrode fingers in the plurality of interdigitated electrodes is greater than a total number of the plurality of pairs of anchors.

Abstract: Disclosed are exemplary monolithic acoustically coupled thin film piezoelectric-on-substrate filters that operate in a wide frequency range. The monolithic thin-film-piezoelectric acoustic filters includes a resonant structure that is released from and supported by a substrate that comprises a thin-film piezoelectric layer disposed between a lower electrode and a plurality of electrically isolated upper electrodes. Second order narrowband filters are realized by utilizing coupled resonance modes of a single microstructure. Narrow-bandwidth filters are disclosed that are suitable for channel-select applications in IF and RF bands. Filter Q values of 800 at 250 MHz, 470 at 360 MHz, and 400 at 3.5 GHz for small footprint second-order filters are disclosed. The measured power handling of these devices is high due to the use of high energy density structural material, showing a 0.2 dB compression point of >15 dBm at 360 MHz.

Abstract: Disclosed are micromechanical resonator apparatus having features that permit multiple resonators on the same substrate to operate at different operating frequencies. Exemplary micromechanical resonator apparatus includes a support substrate and suspended micromechanical resonator apparatus having a resonance frequency. In one embodiment, the suspended micromechanical resonator apparatus comprises a device substrate that is suspended from and attached to the support substrate, a piezoelectric layer formed on the suspended device substrate, and a plurality of interdigitated upper electrodes formed on the piezoelectric layer. In another embodiment, the suspended micromechanical resonator apparatus comprises a device substrate that is suspended from and attached to the support substrate, a lower electrode formed on the suspended device substrate, a piezoelectric layer formed on the lower electrode, and a plurality of interdigitated upper electrodes formed on the piezoelectric layer.

Abstract: Disclosed are piezoelectrically-transduced micromachined bulk acoustic resonators fabricated on a polycrystalline diamond film deposited on a carrier substrate. Exemplary resonators comprise a substrate having a smooth diamond layer disposed thereon. A piezoelectric layer is disposed on the diamond layer and top and bottom electrodes sandwich the piezoelectric layer. The resonant structure comprising the diamond layer, piezoelectric layer and electrodes are released from the substrate and are free to vibrate. Additionally, one or more sensing platforms may be coupled to the substrate to form a mass sensor.

Abstract: Oscillators include a resonator having first and second electrodes and configured to resonate at a first frequency at which the first and second electrodes carry in-phase signals and at a second frequency at which the first and second electrodes carry out-of-phase signals. A driver circuit is configured to selectively sustain either the in-phase signals on the first and second electrodes or the out-of-phase signals on the first and second electrodes so that the resonator selectively resonates at either the first frequency or the second frequency, respectively. Related oscillator operating methods are also disclosed.

Abstract: Disclosed are moveable microstructures comprising in-plane capacitive microaccelerometers, with submicro-gravity resolution (<200 ng/?Hz) and very high sensitivity (>17 pF/g). The microstructures are fabricated in thick (>100 ?m) silicon-on-insulator (SOI) substrates or silicon substrates using a two-mask fully-dry release process that provides large seismic mass (>10 milli-g), reduced capacitive gaps, and reduced in-plane stiffness. Fabricated devices may be interfaced to a high resolution switched-capacitor CMOS IC that eliminates the need for area-consuming reference capacitors. The measured sensitivity is 83 mV/mg (17 pF/g) and the output noise floor is ?91 dBm/Hz at 10 Hz (corresponding to an acceleration resolution of 170 ng/?Hz). The IC consumes 6 mW power and measures 0.65 mm2 core area.