Abstract: The present invention relates to a multilevel memory bus system for transferring information between at least one DMA controller and at least one solid-state semiconductor memory device, such as NAND flash memory devices or the like. This multilevel memory bus system includes at least one DMA controller coupled to an intermediate bus; a flash memory bus; and a flash buffer circuit between the intermediate bus and the flash memory bus. This multilevel memory bus system may be disposed to support: an n-bit wide bus width, such as nibble-wide or byte-wide bus widths; a selectable data sampling rate, such as a single or double sampling rate, on the intermediate bus; a configurable bus data rate, such as a single, double, quad, or octal data sampling rate; CRC protection; an exclusive busy mechanism; dedicated busy lines; or any combination of these.

Abstract: The present invention relates to a multilevel memory bus system for transferring information between at least one DMA controller and at least one solid-state semiconductor memory device, such as NAND flash memory devices or the like. This multilevel memory bus system includes at least one DMA controller coupled to an intermediate bus; a flash memory bus; and a flash buffer circuit between the intermediate bus and the flash memory bus. This multilevel memory bus system may be disposed to support: an n-bit wide bus width, such as nibble-wide or byte-wide bus widths; a selectable data sampling rate, such as a single or double sampling rate, on the intermediate bus; a configurable bus data rate, such as a single, double, quad, or octal data sampling rate; CRC protection; an exclusive busy mechanism; dedicated busy lines; or any combination of these.

Abstract: Stacking techniques are illustrated in example embodiments of the present invention wherein semiconductor dies are mounted in a module to become a MCM which serves as the basic building block. A combination of these modules and dies in a substrate creates a package with specific function or a range of memory capacity. Several example system configurations are provided using BGA and PGA to illustrate the stacking technique. Several pin assignment and signal routing techniques are illustrated wherein internal and external signals are routed from main board to various stacked modules. Expansion can be done both on the vertical and horizontal orientations.

Abstract: The present invention relates to a multilevel memory bus system for transferring information between at least one DMA controller and at least one solid-state semiconductor memory device, such as NAND flash memory devices or the like. This multilevel memory bus system includes at least one DMA controller coupled to an intermediate bus; a flash memory bus; and a flash buffer circuit between the intermediate bus and the flash memory bus. This multilevel memory bus system may be disposed to support: an n-bit wide bus width, such as nibble-wide or byte-wide bus widths; a selectable data sampling rate, such as a single or double sampling rate, on the intermediate bus; a configurable bus data rate, such as a single, double, quad, or octal data sampling rate; CRC protection; an exclusive busy mechanism; dedicated busy lines; or any combination of these.

Abstract: This invention relates to data networks, and more particularly, to platforms, modules and systems for networking at least one device having Fibre Channel node functionality with another device. Networking of Fibre Channel-enabled devices is provided by an apparatus that includes a circuit board having a first set of signal paths; a first transceiver having a first optical I/O port, a first transceiver output and a first transceiver input; a first I/O connection for coupling to a first Fibre Channel port and for receiving signals transmitted by the first transceiver output via a subset of the first set of signal paths; and a second I/O connection for coupling to a second Fibre Channel port and for receiving signals from the first Fibre Channel Port.

Abstract: A network storage device. In one embodiment, the network storage device of the present invention uses solid-state non-volatile memory (e.g., flash-memory) as a storage medium, and has at least one interface configured for coupling to a computer network. The network storage device of the present invention is accessible to client(s) and/or server(s) of the computer network, and uses solid-state non-volatile memory to store data received therefrom. The network storage device may also be configured to include a memory for caching data to be written to the solid-state non-volatile memory. In order to provide additional storage, the network storage device may also include a peripheral interface or another network interface for coupling to a mass storage device (e.g., a RAID system), and/or another network interface for coupling to a network of mass storage devices. The network storage device may be a stand-alone unit, or may be implemented as part of a network server, or as part of a mass storage device.

Abstract: A method for recovering data in a storage device is provided in which information related to a first data structure is defined with a plurality of copies of a second data structure and the information related to the first data structure is rebuilt using the plurality of copies of the second data structure upon corruption thereof.

Abstract: An apparatus for and method of memory operation having a memory, a cache containing a plurality of entries with a plurality of the entries to be written to memory, a detector for detecting in the cache the plurality of entries to be written to memory, and a processor for erasing a first portion of the memory to accommodate the plurality of entries to be written to memory and writing to the first portion of the memory the plurality of entries to be written to memory wherein an erase operation is followed by a plurality of sequential write operations.

Abstract: A method and system for controlling data in a computer system when the computer system loses power is disclosed. The method and system comprises activating a plurality of super capacitors to supply power to the computing engine based upon power being removed from the computer system and reconfiguring the data in the computing engine. Through the use of a system and method, large amounts of newly written and modified data can be stored from the volatile memory to the non-volatile memory in the event of a sudden external system power loss. The system and method allows data to be rapidly and irretrievably erased from the non-volatile memory automatically, in the event of a sudden loss of external power, or manually. This capability consumes minimal space and weight and is implemented in an affordable manner.

Abstract: An apparatus for and method of memory operation having a memory, a cache containing a plurality of entries with a plurality of the entries to be written to memory, a detector for detecting in the cache the plurality of entries to be written to memory, and a processor for erasing a first portion of the memory to accommodate the plurality of entries to be written to memory and writing to the first portion of the memory the plurality of entries to be written to memory wherein an erase operation is followed by a plurality of sequential write operations.

Abstract: An apparatus for and method of memory operation having a memory, a cache containing a plurality of entries with a plurality of the entries to be written to memory, a detector for detecting in the cache the plurality of entries to be written to memory, and a processor for erasing a first portion of the memory to accommodate the plurality of entries to be written to memory and writing to the first portion of the memory the plurality of entries to be written to memory wherein an erase operation is followed by a plurality of sequential write operations.

Abstract: The present invention discloses a method and system for controlling data in a computer system when the computer system loses power, the computer system comprising a computing engine. The method and system comprises activating a plurality of super capacitors to supply power to the computing engine based upon power being removed from the computer system and reconfiguring the data in the computing engine. Through the use of a system and method in accordance with the present invention, a user is able to correctly store large amounts of newly written and modified data from the volatile memory to the non-volatile memory in the event of a sudden external system power loss. Furthermore, the user of a system and method in accordance with the present invention will be able to rapidly and irretrievably erase data from the non-volatile memory automatically, in the event of a sudden loss of external power or manually. This capability consumes minimal space and weight and is implemented in an affordable manner.

Abstract: A flash-memory system provides solid-state mass storage as a replacement to a hard disk. A unified re-map table in a RAM is used to arbitrarily re-map all logical addresses from a host system to physical addresses of flash-memory devices. Each entry in the unified re-map table contains a physical block address (PBA) of the flash memory allocated to the logical address, and a cache valid bit and a cache index. When the cache valid bit is set, the data is read or written to a line in the cache pointed to by the cache index. A separate cache tag RAM is not needed. When the cache valid bit is cleared, the data is read from the flash memory block pointed to by the PBA. Two write count values are stored with the PBA in the table entry. A total-write count indicates a total number of writes to the flash block since manufacture. An incremental-write count indicates the number of writes since the last wear-leveling operation that moved the block.

Abstract: A flash-memory system adds system-overhead bytes to each page of data stored in flash memory chips. The overhead bytes store system information such as address pointers for bad-block replacement and write counters used for wear-leveling. The overhead bytes also contain an error-correction (ECC) code when stored in the flash-memory chips. A DRAM cache stores the pages of data as enlarged pages with the overhead bytes, even though the enlarged pages are not aligned to a power of 2. When an enlarged page is read out of a flash-memory chip, its ECC code is immediately checked and the ECC code in the overhead bytes is replaced with a syndrome code and stored in the DRAM cache. A local processor for the flash-memory system then reads the syndrome code in the overhead bytes and repairs any error using repair information in the syndrome. The overhead bytes are stripped off when pages are transferred from the DRAM cache to a host.

Abstract: A flash-memory system is expandable. Rather than directly connecting individual flash-memory chips to a controller, flash buffer chips are used. Each flash buffer chip can connect to four banks of flash-memory chips. Chip enables for individual chips in a bank are generated from an address sent to the flash buffer chips. Two flash-specific DMA controllers are provided, each with four DMA state machines for controlling the four banks of flash-memory chips attached to a flash buffer chip. This allows for four-way interleaving. Two flash buses connect the two DMA controllers to flash buffer chips. The flash bus has a narrow byte-wide interface to send command, address, and data bytes from the DMA controller to the flash buffer chips. These command, address, and data bytes are then passed through the flash buffer chip to the flash-memory chips. Two additional command signals on the flash bus are used to select and control the flash buffer chips.