Abstract: A glass or other dielectric backed transducer structure is formed by utilizing a series of processes including at least one electrostatic bond. The processes enable one to bond a semiconductor wafer to a dielectric as a glass wafer. Then by selectively removing certain conductively semiconductor, one obtains a "thin ribbon" piezoresistive bridge secured to a thin glass wafer. The resultant structure is entirely unanticipated by the prior art.A glass part is also formed by electrostatically bonding a glass wafer to a semiconductor wafer, polishing the glass to a desired depth, masking the polished glass layer according to a desired pattern representative of the glass part, etching away all the glass except the desired pattern, and thence removing all the semiconductor.