Abstract: An isotropic or partially isotropic etch shrinks lithographically patterned photoresist (211, 212) to yield reduced linewidth patterned photoresist (213, 214) with a buried antireflective coating also acting as an etchstop or a sacrificial layer. The reduced linewidth pattern (213, 214) provide an etch mask for subsequent anisotropic etching of underlying material such as polysilicon (206) or metal or insulator or ferroelectric.

Abstract: This disclosure defines an infrared image detector formed in a block of semiconductor material by etching slots in the semiconductor material. The slots define the individual detectors, effectively isolate them from each other both optically and electrically, and permit the detectors to be placed very close to each other. Biasing slots are etched in each detector and on two opposing sides of the detector and the walls of the slots are made highly conductive by an impurity diffusion or coating or alternatively the slots is filled with a conducting material. The conducting layer or material in each slot is connected to a conductor on the surface of the semiconductor wafer so that the conductor inside the biasing slot serves as an electrical contact for the detector. The detectors are biased electrically by applying a voltage difference between two different sets of conducting slots.