Abstract: A wafer including a mask on one face and at least one layer on an opposite face, wherein the mask has at least one scribeline which overlies at least a portion of the opposite face which is substantially free of the at least one layer is described. Also described is a method of preparing a pellicle, the method including: providing a wafer having a mask on one face and at least one layer on an opposite face, defining a scribeline in the mask, and selectively removing a portion of the at least one layer which at least partially overlies the scribeline as well as a method of preparing a pellicle, the method including: providing a pellicle core, and removing at least some material from at least one face of the pellicle core in a non-oxidising environment. In any aspect, the pellicle may include a metal nitride layer.

Abstract: Various systems and methods for imprinting a unique identifier on a semiconductor die are disclosed herein. Example embodiments involve receiving a substrate at a photolithography station, the substrate including a photosensitive layer and an area for forming semiconductor dies, forming circuits on the substrate using a photolithography mask, imprinting a unique identifier on each semiconductor die on the substrate using a digital photomask and removing the substrate containing the semiconductor dies containing the circuits and the unique identifiers from the photolithography station. In some embodiments, each unique identifier is associated with a unique record for recording characteristics of the substrate, of the semiconductor die and of the unique identifier. In some embodiments, the digital photomask includes dynamically-controlled pixels, controllable to define a unique pattern for each unique identifier. In some embodiments, the unique identifier is a two-dimensional code.

Abstract: A photolithography mask (10) is provided, said photolithography mask (10) including a plate (15) or an empty frame matrix, a surface of the plate (15) or empty frame matrix including an array of micro-pixels (20), wherein each micro-pixel (20) is independently controllable using an on-board micro-controller (25) in such a manner that a pattern can be generated with the array of micro-pixels (20).

Abstract: A photolithography mask (10) is provided, said photolithography mask (10) including a plate (15) or an empty frame matrix, a surface of the plate (15) or empty frame matrix including an array of micro-pixels (20), wherein each micro-pixel (20) is independently controllable using an on-board micro-controller (25) in such a manner that a pattern can be generated with the array of micro-pixels (20).

Abstract: A wafer including a mask on one face and at least one layer on an opposite face, wherein the mask has at least one scribeline which overlies at least a portion of the opposite face which is substantially free of the at least one layer is described. Also described is a method of preparing a pellicle, the method including: providing a wafer having a mask on one face and at least one layer on an opposite face, defining a scribeline in the mask, and selectively removing a portion of the at least one layer which at least partially overlies the scribeline as well as a method of preparing a pellicle, the method including: providing a pellicle core, and removing at least some material from at least one face of the pellicle core in a non-oxidising environment. In any aspect, the pellicle may include a metal nitride layer.

Abstract: A device and method that automatically corrects the color of a dome light display device. An dome light display device may include one or more colored light emitting diodes (LEDs) arranged in a row, a photodetector disposed with the one or more LEDs in the row and a measurement circuit is configured to receive an electrical signal from the photodetector and compare the electrical signal to a reference signal associated with an intensity of light for a particular color of light and adjust the intensity of light emitted from the one or more LEDs based on the reference value.

Abstract: In a method of performing an anisotropic etch on a substrate in an inductively coupled plasma etch chamber, at least three cycles of a procedure consisting essentially of the four following steps are performed: a. depositing a protective polymer on a patterned substrate; b. performing a first low pressure etch to partially remove the deposited protective polymer at a pressure less than 40 mTorr; c. performing a high pressure etch at a pressure between between 40 mT and 1000 mT to form a portion of a trench in the substrate; and d. performing a second low pressure etch at a pressure less than 40 MTorr to reduce surface roughness. This method permits the fabrication of deep trenches with reduced surface roughness.

Abstract: A method of making an etch structure in a substrate involves the steps of providing a mask on a substrate with a pattern that leaves at least one opening leaving the substrate in direct contact with the ambient, performing an isotropic or quasi-isotropic etch through a mask to create a cavity under the mask, which mask is left behind as a suspended membrane above the cavity; and performing a subsequent anisotropic etch that etches anisotropically the pattern of the mask in the bottom of the cavity.

Abstract: A method of making an etch structure in a substrate involves the steps of providing a mask on a substrate with a pattern that leaves at least one opening leaving the substrate in direct contact with the ambient, performing an isotropic or quasi-isotropic etch through a mask to create a cavity under the mask, which mask is left behind as a suspended membrane above the cavity; and performing a subsequent anisotropic etch that etches anisotropically the pattern of the mask in the bottom of the cavity.