Abstract: Systems and methods condition a filter assembly. Purging liquid is passed through the filter assembly to remove contaminants from the pores and voids of the filter medium and from the upstream and downstream sides of the filter medium.

Abstract: Systems and methods condition a filter assembly. Purging liquid is passed through the filter assembly to remove contaminants from the pores and voids of the filter medium and from the upstream and downstream sides of the filter medium.

Abstract: A method of cleaning semiconductor wafers before the epitaxial deposition comprising (A) etching silicon wafers with HF; (B) rinsing the etched wafers with ozonated ultrapure water; (C) treating the rinsed wafers with dilute SC1; (D) rinsing the treated wafers; (E) treating the wafers with dilute HF; (F) rinsing the wafers with DI water; (G) drying the wafers with nitrogen and a trace amount of IPA; wherein steps (E) through (G) are conducted in a single dryer chamber and wafers are not removed from the chamber between steps. A system comprising a single tank adapted for cleaning, etching, rinsing, and drying the wafers has means to inject HF into a DI water stream.

Abstract: A method of cleaning semiconductor wafers before the epitaxial deposition comprising (A) etching silicon wafers with HF; (B) rinsing the etched wafers with ozonated ultrapure water; (C) treating the rinsed wafers with dilute SC1; (D) rinsing the treated wafers; (E) treating the wafers with dilute HF; (F) rinsing the wafers with DI water; (G) drying the wafers with nitrogen and a trace amount of IPA; wherein steps (E) through (G) are conducted in a single dryer chamber and wafers are not removed from the chamber between steps. A system comprising a single tank adapted for cleaning, etching, rinsing, and drying the wafers has means to inject HF into a DI water stream.

Abstract: Processing gases in an etching chamber for semiconductor wafers are dispersed by a porous plastic membrane interposed between the source of gases and the wafer being processed. A peripheral outlet in the chamber wall exhausting gases is also traversed by a porous plastic membrane.

Abstract: High temperature ceramic nut of aluminum oxide for use in coupling a flared tube to a flare fitting.

Abstract: A chemical processing system for generating ultra-pure chemicals near the site of use. The system includes in series a supply of chemical or the site of use which may be a tank or drum and may be a point of use for semiconductor manufacturing, a concentrate sensor, a pump, a filter, a reactor vessel, and an optional heat exchanger, all connected by Kel-F tubing. Sources of pure filtered gas connect to the reactor vessel. An ozone generator can likewise connect to the reactor vessel. An optional isolation coil can likewise connect between the gas source and the reactor vessel.

Abstract: High temperature ceramic nut of aluminum oxide for use in coupling a flared tube to a flare fitting.

Abstract: Megasonic cleaning system for use in cleaning of electronic or other items such as semiconductor wafers or semiconductor substrates in a wafer carrier. Formed piezoelectric transducers are bonded to a tubular envelope at a low temperature and are excited at a first frequency or a second higher frequency for cleaning of items in a cleaning tank. A novel sealing assembly accommodates tubular envelopes of varying diameters.

Abstract: A process for etching oxide films on the semiconductor, or other substrates, in a sealed photochemical reactor. Anhydrous hydrogen fluoride (AHF) gas, or other halogen containing gases, and alcohol vapor carried by an inert gas, such as nitrogen, are passed over the oxides to be etched. The UV radiation shines through a window, which passes the UV radiation onto the oxides while the gases are flowing, and enhances and controls etching of the oxides. The UV window is impervious to the etch process gases. The etch rates are modified, providing for improved oxide etching characteristics.

Abstract: A cluster tool module for dry process cleaning of substrates. A substrate process reactor body assembly includes a gas inlet and gas outlet on opposing sides of a ceramic reactor body. A linear xenon flash lamp in a light bar provides a UV source for uniform distribution over a substrate by use of a light filter. Infrared heating is also provided by a plurality of infrared lamps in the light box. A moisturizer is provided for safe introduction of water vapor into the gas flow.

Abstract: Batch processing of semiconductor wafers utilizing a gas phase etching with anhydrous hydrogen fluoride gas flowing between wafers in a wafer carrier. The etching may take place in a bowl with the wafer carrier mounted on a rotor in the closed bowl. The etchant gas may include a small amount of water vapor, along with the anhydrous hydrogen fluoride gas, as may be needed to commence the etching process. The etching may take place with the wafers arranged in a stack in the wafer carrier and extending along or on the rotation axis.

Abstract: The thermal profile at the top of an EFG die is improved by including heat radiation deflectors within the crucible to change the level of radiation heating experienced by at least some portions of the die.

Abstract: A crucible for containing a melt and die for EFG growth of sapphire is supported by a pyrolytic graphite crucible support plate having the C axis of the pyrolytic graphite perpendicular to the bottom of the crucible which is supported by the plate. This thermally insulates the crucible from the pedestal which supports the support plate.

Abstract: Accurate metering and dispensing of small quantities of abrasive material comprised of particles or powder, or both is accomplished by feed apparatus comprising a rotatable tubular member having a threaded interior surface for transporting the abrasive material through the tubular member in response to rotation of the member about the axis thereof. The discharge portion of the tube is particularly adapted to dispense frequent, small quantities of the material rather than less frequent larger quantities.