Abstract: Solid, shaped and fired fibers of Ti4O7 and Ti5O9 are made by firing TiO2 fibers in a reducing atmosphere. In a first aspect, the TiO2 fibers are made by extruding into air a viscous TiO2 gel and heat treating the resulting green fibers to remove solvent, decompose and to volatilize undesired constituents to form electrically conductive, refractory fibers of Ti4O7 and Ti5O9. In a second aspect, solid, shaped and fired fibers of Ti4O7 and Ti5O9 are made by firing extruded fibers from mixtures of TiO2.

Abstract: Disclosed is a fiber testing apparatus which permits creep and strength testing of one or more fibers in a controlled environment, including a vacuum, at high temperatures. Components of the fiber tester provide for accurate measurement of the effects on the fiber(s) being tested when exposed to a chosen environment. The fiber tester includes a furnace system, fiber testing system, a fixed sample, a environmental control system, a mass flow control system, a Computer Data Acquisition and Control (CDAC) system, and a support system. Most of these systems are contained in a test chamber which is part of the environmental control system. These systems of the fiber tester allow various types of mechanical tests to be performed on one or more fibers under a variety of environmental conditions not previously achievable.

Abstract: A structural article for high temperature applications comprises a body formed of at least partially consolidated, particulate silicon nitride, a conformal outer coating of silicon nitride or silicon carbide on the body, and a conformal intermediate layer of a silicon, oxygen and nitrogen-containing compound, i.e. silicon oxynitride, chemically bonded to both the body and the outer coating. The method for making such an article comprises providing a body formed of at least partially consolidated, particulate silicon nitride, oxidizing the surface of the body, removing silicon dioxide from the oxidized surface of the body; and chemically vapor depositing a conformal outer coating of silicon nitride or silicon carbide. The conformal outer coating provides a protective envelope around and assists in high temperature isostatic pressing of the body and hence permits one to use the structural article in isostatic pressing processes.

Abstract: A testing apparatus is described that enables both single and double-ended tubular members to be tested under pressure and at elevated temperatures. For double-ended tubular members, the apparatus comprises first and second pressure seals at either end of the tubular member under test, both seals including annular compliant members that bear upon the internal surface of the tubular member. A heater is positioned within the tubular member and one of the pressure seals has an orifice through which the heater is connected to a power source. Pressurization occurs through an orifice in the other pressure seal and cooling apparatus surrounds the first and second ends of the tubular member to cool the pressure seals, thereby enabling the annular compliant members to retain their compliancy when the tubular member is heated to test temperature. For single-ended tubular members, a single pressure seal is used having pathways for both electrical and pressurization connections to the interior of the tubular member.

Abstract: New arsenate compounds, compositions and solid diffusion sources for the arsenic doping of semiconductors are disclosed which comprise substances composed of a sintered arsenate that decomposes upon heating at temperatures between 500.degree.-1400.degree. C. to release As.sub.2 O.sub.5, As.sub.2 O.sub.3 and/or elemental arsenic vapors for transport to semiconductor elements as a controlled dopant.

Abstract: New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopants, such as phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon, tellurium, tin and cadmium to the semiconductor host substrate; wherein the dopant source comprises a dopant containing porous, inert, rigid dimensionally stable and thermal shock resistant reaction sintered Si.sub.3 N.sub.4 carrier material.

Abstract: New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopant, such as phosphorus, arsenic, antimony, boron gallium, aluminum, zinc, silicon, tellurium, tin and cadmium to the semiconductor host substrate; wherein the dopant carrier is comprised of a rigid, multiphase dimensionally stable refractory foam, formed through the impregnation, and subsequent thermal destruction of an open-celled organic polymer foam.

Abstract: New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopant, such as phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon, tellurium, tin and cadmium to the semiconductor host substrate; wherein the dopant source comprises a dopant containing porous, inert, rigid dimensionally stable and thermal shock resistant carrier comprised of SiC, elemental silicon or mixtures thereof.

Abstract: An improved semiconductor wafer handling system completely eliminates the need for boats, sleds, paddles, wheeled carriers, etc., customarily employed in transporting wafers during heat processing through the use of a plurality of rigid, polished cantilevered rods having a multiplicity of spaced slots for cooperatively holding wafers in an upright position. The system provides a means for achieving higher production yields of such semiconductor elements by generating fewer contaminating particles and through less exposure to ambient environment.

Abstract: A process for growing crystals of an inorganic material by forming a solution of the material in a solvent for the compound, forming a film of the solution and etching the solvent from the film with an etching gas until crystals of the material form. The solution has a solidification temperature lower than the melting or sublimation temperature of the material and higher than the condensation temperatures of the etching gas and of reaction products formed by the etching. The etching temperature is between the solidification temperature of the solution and the melting or sublimation temperature of the material and is lower than the vaporization temperature of the solvent and solution and higher than the condensation temperatures of the etching gas and reaction products.

Abstract: A method for uniformly coating ceramic fibers comprising from about 40 to 100 weight percent aluminum oxide with Cr.sub.2 O.sub.3. The method comprises precipitating Cr.sub.2 O.sub.3.xH.sub.2 O (chromium oxide hydrate) upon the fibers followed by converting the Cr.sub.2 O.sub.3.xH.sub.2 O to Cr.sub.2 O.sub.3. The resulting Cr.sub.2 O.sub.3 coated fibers have good shrinkage resistance, good temperature resistance and good flexibility in thick fiber articles.

Abstract: A ceramic fiber and a shrink resistant article manufactured therefrom. The fiber comprises at least 80 weight percent of a refractory compound selected from the group consisting of silica, alumina, aluminum silicate, titania, zirconia, zirconium silicate and mixtures thereof and which comprises less than 5 combined weight percent of alkali or alkaline metal oxide or alkali or alkaline metal silicate. The fiber is uniformly coated with from about 0.01 to about 5 weight percent of Cr.sub.2 O.sub.3.

Abstract: A ceramic fiber and a shrink resistant article manufactured therefrom. The fiber comprises at least 80 weight percent of a refractory compound selected from the group consisting of silica, alumina, aluminum silicate, titania, zirconia, zirconium silicate and mixtures thereof and which comprises less than 5 combined weight percent of alkali or alkaline metal oxide or alkali or alkaline metal silicate. The fiber is uniformly coated with from about 0.01 to about 5 weight percent of Cr.sub.2 O.sub.3.