Abstract: An operational lifetime, and also performance characteristics, can be accurately predicted for an experimental transistor design (10) and a specified set of fabrication process conditions (117), without actually fabricating and testing a physical transistor made according to the particular design data and process conditions. With respect to the prediction of an operational lifetime, the operational lifetime can be expressed as a function of the size of a gate overlap (12) of the transistor, and this relationship is valid throughout a selected semiconductor technology for which the transistor is designed. The size of the gate overlap is determined by selecting a combinations of values for two process conditions.

Abstract: A semiconductor processing tool evaluation and design method which replaces tool specifications with a requirements region plus associated evaluation functions for iterative feedback tool design.

Abstract: Integration of dual voltages on a single chip can be accomplished with a minimum of extra masks by optimizing only the MDD implant of the peripheral transistors, while other implants remain the same for both transistor types. This meets lifetime specifications without unnecessary expense.

Abstract: A method and system for providing optimal tuning for complex simulators. The method and system include initially building at least one RSM model having input and output terminals. Then there is provided a simulation-free optimization function by constructing an objective function from the outputs at the output terminals of the at least one RSM model and experimental data. The objective function is optimized in an optimizer and the optimized objective function is fed to the input terminal of the RSM. Building of at least one RSM model includes establishing a range for the simulation, running a simulation experiment for the designed experiment, extracting relevant data from said experiment and building the RSM model from the extracted relevant data. The step of running a simulation experiment comprises the step of running a DOE/Opt operation.

Abstract: A statistical design method is provided for minimizing the impact of manufacturing variations on semiconductor manufacturing by statistical design which seeks to reduce the impact of variability on device behavior. The method is based upon a Markov representation of a process flow which captures the sequential and stochastic nature of semiconductor manufacturing and enables the separation of device and process models, statistical modeling of process modules from observable wafer states and approximations for statistical optimization over large design spaces. The statistical estimation component of this method results in extremely accurate predictions of the variability of transistor performance for all of the fabricated flows. Statistical optimization results in devices that achieve all transistor performance and reliability goals and reduces the variability of key transistor performances.

Abstract: A dual voltage chip is fabricated with no intermediate-doped (LDD or MDD) area in the high-voltage transistors by adjusting the gate sidewall spacer thickness and the source/drain implant.

Abstract: Methods and processes to reduce the cost and cycle time of designing manufacturing flows are described, particularly for microelectronic integrated circuit processes. One embodiment of the present invention is a method which divides the task of designing process flows into a number of abstraction levels and provides mechanisms to translate between these levels of abstraction. The process is divided into a number of modules each having process constraints. Process constraints are propagated backwards from the final module to the first module, and may also be propagated forward from earlier modules to later modules of needed. This approach results in a top-down design methodology where requirements from higher levels of abstraction are successively reduced to lower abstraction levels, while meeting the constraints imposed by the lower levels.