Abstract: A circuit scanning device for use in mapping the lateral dimensions and positions of a conductive layer of an integrated circuit is provided. The device includes a scan control, a scanning electron microscope, an x-ray detector, a map maker, an algorithm storage unit, and an algorithm selector whereby an IC chip is irradiated with an electron beam, which is raster scanned across the IC chip. The x-ray radiation emission is then monitored and the electron beam is adjusted so as to produce an enhanced map of the conductive layers on the IC chip.

Abstract: A semiconductor device conductive line width non-destructive measuring sym comprises an electron beam source of sufficient energy to penetrate the passivation coating over conductive line traces and means for scanning the electron beam across the surface. An x-ray monitor to monitor x-rays produced in the conductive traces by the scanning electron beam produces an accurate measurement of the line width and spacing of the conductive traces.

Abstract: A narrow, high energy, electron beam is caused to impinge upon an integrated circuit. The accelerating voltage of the electron beam is increased until the electrons have just enough energy to penetrate through the thickness of the passivation layer (SiO.sub.2). The accelerating voltage is then increased a predetermined amount (3-5 KeV) above the voltage required for passivation layer penetration. The transmitted electrons interact with the sublayer of film material (Al) to generate distinct X-rays. The increased-intensity electron beam is x/y or raster scanned over the area of interest of the IC chip. The X-ray intensities generated during the raster scan are detected and stored (e.g., in a RAM). After a complete scan of the area of interest, the X-ray intensities are read out of store and visually displayed on a CRT. Through correlation of measured and predicted X-ray intensities, a scanning thickness mapping is available for display/quantitative analysis of the thickness profile of a passivation layer.

Abstract: A narrow, high energy, electron beam is caused to impinge upon an integrated circuit. The accelerating voltage of the electron beam is increased in incremental steps (3 or more) so that the electrons penetrate into the film and then into the substrate. The transmitted electrons interact with the film and substrate materials to generate distinct X-rays. The relative X-ray intensities of the film material to that of the substrate material is utilized to determine the film thickness.

Abstract: A narrow, high energy, electron beam is caused to impinge upon an integra circuit. The accelerating voltage of the electron beam is increased until the electrons have just enough energy to penetrate through the thickness of the passivation layer of the integrated circuit. The accelerating voltage is then increased a predetermined amount (3-5 KeV) above the voltage required for passivation layer penetration. The transmitted electrons interact with the sublayer of thin film material and generate distinct X-rays. The increased-intensity electron beam is x/y or raster scanned over the area of interest of the integrated circuit. The X-ray intensities generated during the raster scan are detected and stored. After a complete scan of the area of interest, the X-ray intensities are read, processed through a formula that compensates for absorption effects, and visually displayed.