Abstract: A semiconductor device includes a semiconductor body, a stress relieving layer or layer stack disposed over at least part of the semiconductor body, the stress relieving layer or layer stack comprising a plurality of openings which yield a patterned surface topography for the stress relieving layer or layer stack, and a metal layer or layer stack formed on the stress relieving layer or layer stack and occupying the plurality of openings in the stress relieving layer or layer stack. The patterned surface topography of the stress relieving layer or layer stack is transferred to a surface of the metal layer or layer stack facing away from the semiconductor body. The stress relieving layer or layer stack has a different elastic modulus than the metal layer or layer stack over a temperature range.

Abstract: A semiconductor device includes a semiconductor body, a stress relieving layer or layer stack disposed over at least part of the semiconductor body, the stress relieving layer or layer stack comprising a plurality of openings which yield a patterned surface topography for the stress relieving layer or layer stack, and a metal layer or layer stack formed on the stress relieving layer or layer stack and occupying the plurality of openings in the stress relieving layer or layer stack. The patterned surface topography of the stress relieving layer or layer stack is transferred to a surface of the metal layer or layer stack facing away from the semiconductor body. The stress relieving layer or layer stack has a different elastic modulus than the metal layer or layer stack over a temperature range.

Abstract: A semiconductor device includes a semiconductor body, a stress relieving layer or layer stack disposed over at least part of the semiconductor body, the stress relieving layer or layer stack comprising a plurality of openings which yield a patterned surface topography for the stress relieving layer or layer stack, and a metal layer or layer stack formed on the stress relieving layer or layer stack and occupying the plurality of openings in the stress relieving layer or layer stack. The patterned surface topography of the stress relieving layer or layer stack is transferred to a surface of the metal layer or layer stack facing away from the semiconductor body. The stress relieving layer or layer stack has a smaller elastic modulus than the metal layer or layer stack over a temperature range.

Abstract: The sighting device comprises first means for displaying at least one displacement mark parallel to the central vertical spider-line, means for altering the position of said displacement mark, means for measuring the target moving time which has elapsed between one initial moment at which the target seen in the range finder is superimposed with a reference mark, and a subsequent moment at which said target seen in the range finder held in immobilized position reaches said displacement mark; and second means for displaying at least one cross velocity adjusted mark, parallel to said central vertical spider-line, and whose position is determined first as a function of the projectile flight time, which is itself determined from the firing distance, and second, as a function of the target moving time, measured for a given displacement mark.

Abstract: An anti-tank mine with a wide area of action comprising means for detecting a target of the tracked-vehicle type and a mine body incorporating a pyrotechnic charge, means for controlling the triggering of the mine in response to a signal given by the target detection means, means for firing the charge and means for propelling the mine body triggered by the control means. The target detection means are associated with reinforcement means to constitute at least one flexible guide-detection cable serving as a guide when the mine body moves under the action of the propelling means in response to the detection of a target. Preferably a plurality of guide-detection cables spreadable in several different directions around the mine body are used.

Abstract: The simplified homing system comprises an accelerometric device mounted directly on the missile structure and associated with discriminating means for delivering signals representative of the lateral acceleration .gamma..sub.ext of the missle due to outside forces and the centrifugal acceleration .gamma..sub.c due to the rolling; target detection means directly mounted on the missile structure; passive means ensuring the keeping up of the rolling movement of the missile; means for determining from information supplied by the accelerometric device and discriminating means and by target detection means the serviceable values related to the vector V indicating the relative speed of the missile with respect to the air in a reference system related to the missile and to the vector u.sub.c representing the direction of the target with respect to the axis of the missile and means for elaborating a guiding force F.sub.p from the said predetermined serviceable values related to the vectors V and u.sub.c.

Abstract: There is described a method and apparatus comprising a gasdynamic laser wherein the main gas flow is introduced into a chamber and heated therein and a secondary gas flow is injected into the heated main gas flow so as to produce laser emission, characterized in that the main gas flow, before being introduced into the chamber, is preheated to a temperature preferably above 500.degree. K.degree..