Abstract: A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, to remove the modified layer from the substrate surface, wherein removing the modified layer includes exposing the substrate surface to a metal complex, such that a ligand exchange reaction occurs between the metal complex and converted species of the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues formed from the exposure of the substrate surface to the metal complex, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.

Abstract: A method for performing atomic layer etching (ALE) on a substrate is provided, including the following operations: performing a surface modification operation on a substrate surface, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage configured to control a depth of the substrate surface that is converted by the surface modification operation; performing a removal operation on the substrate surface, the removal operation configured to remove at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer includes applying thermal energy to effect desorption of the portion of the modified layer. A plasma treatment can be performed to remove residues from the substrate surface following the removal operation.

Abstract: A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, to remove the modified layer from the substrate surface, wherein removing the modified layer includes exposing the substrate surface to a metal complex, such that a ligand exchange reaction occurs between the metal complex and converted species of the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues formed from the exposure of the substrate surface to the metal complex, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.

Abstract: A method for performing atomic layer etching (ALE) on a substrate is provided, including the following operations: performing a surface modification operation on a substrate surface, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage configured to control a depth of the substrate surface that is converted by the surface modification operation; performing a removal operation on the substrate surface, the removal operation configured to remove at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer includes applying thermal energy to effect desorption of the portion of the modified layer. A plasma treatment can be performed to remove residues from the substrate surface following the removal operation.

Abstract: A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, the removal operation configured to remove the modified layer from the substrate surface, wherein removing the modified layer occurs via a ligand exchange reaction that is configured to volatilize the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues generated by the removal operation from the substrate surface, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.

Abstract: A method for performing atomic layer etching (ALE) on a substrate is provided, including the following operations: performing a surface modification operation on a substrate surface, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage configured to control a depth of the substrate surface that is converted by the surface modification operation; performing a removal operation on the substrate surface, the removal operation configured to remove at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer is effected via a ligand exchange reaction that is configured to volatilize the portion of the modified layer. A plasma treatment can be performed to remove residues from the substrate surface following the removal operation.

Abstract: A method for performing atomic layer etching (ALE) on a substrate is provided, including the following operations: performing a surface modification operation on a substrate surface, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage configured to control a depth of the substrate surface that is converted by the surface modification operation; performing a removal operation on the substrate surface, the removal operation configured to remove at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer is effected via a ligand exchange reaction that is configured to volatilize the portion of the modified layer. A plasma treatment can be performed to remove residues from the substrate surface following the removal operation.

Abstract: A method for performing atomic layer etching (ALE) on a substrate is provided, including the following operations: performing a surface modification operation on a substrate surface, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage configured to control a depth of the substrate surface that is converted by the surface modification operation; performing a removal operation on the substrate surface, the removal operation configured to remove at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer is effected via a ligand exchange reaction that is configured to volatilize the portion of the modified layer. A plasma treatment can be performed to remove residues from the substrate surface following the removal operation.

Abstract: A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, the removal operation configured to remove the modified layer from the substrate surface, wherein removing the modified layer occurs via a ligand exchange reaction that is configured to volatilize the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues generated by the removal operation from the substrate surface, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.

Abstract: A conventional ball lock mechanism has been replaced with a wedge adapted to lock a tool, such as a punch, forming tool or die bushing in a retainer block in which the tool can be accurately positioned relative to the retainer block. The tool is released by moving the wedge away from the retainer block. The inclined surface of the wedge may be inclined upward or downward at an acute angle to the vertical, or the wedge may have both upwardly and downwardly inclined surfaces. The upper portion of the tool is preferably non-circular and is held within a tool cavity formed when the wedge is disposed in the retainer block. One surface of the wedge (its tool-mating surface) is adapted to correspond to the surface of the tool in contact with the wedge. The assembly of wedge slidably disposed within the retainer block is preferably used with a hardened backing plate rather than being secured directly to the die shoe.

Abstract: A conventional ball lock mechanism has been replaced with a wedge adapted to lock a tool, such as a punch, forming tool or die bushing in a retainer block in which the tool can be accurately positioned relative to the retainer block. The tool is released by moving the wedge away from the retainer block. The inclined surface of the wedge may be inclined upward or downward at an acute angle to the vertical, or the wedge may have both upwardly and downwardly inclined surfaces. The upper portion of the tool is preferably non-circular and is held within a tool cavity formed when the wedge is disposed in the retainer block. One surface of the wedge (its tool-mating surface) is adapted to correspond to the surface of the tool in contact with the wedge. The assembly of wedge slidably disposed within the retainer block is preferably used with a hardened backing plate rather than being secured directly to the die shoe.

Abstract: A conventional ball lock mechanism has been replaced with a wedge adapted to lock a tool, such as a punch, forming tool or die bushing in a retainer block in which the tool can be accurately positioned relative to the retainer block. The tool is released by moving the wedge away from the retainer block. The inclined surface of the wedge may be inclined upward or downward at an acute angle to the vertical, or the wedge may have both upwardly and downwardly inclined surfaces. The upper portion of the tool is preferably non-circular and is held within a tool cavity formed when the wedge is disposed in the retainer block. One surface of the wedge (its tool-mating surface) is adapted to correspond to the surface of the tool in contact with the wedge. The assembly of wedge slidably disposed within the retainer block is preferably used with a hardened backing plate rather than being secured directly to the die shoe.