Patents by Inventor Richard John Sheffield Young

Richard John Sheffield Young has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ALUMINUM PASTES AND USE THEREOF IN THE PRODUCTION OF PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELLS
    Publication number: 20170077324
    Abstract: An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO2, >0 to 7 wt.-% of Al2O3 and 2 to 10 wt.-% of B2O3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3, useful in the production of aluminum back electrodes of PERC silicon solar cells.
    Type: Application
    Filed: February 18, 2015
    Publication date: March 16, 2017
    Applicant: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Alistair Graeme Prince, Richard John Sheffield Young, Giovanna Laudisio, Gary Coultart, Kenneth Warren Hang, Ben Whittle
  • ALUMINUM PASTES AND USE THEREOF IN THE PRODUCTION OF PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELLS
    Publication number: 20160240706
    Abstract: An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO2, >0 to 7 wt.-% of Al2O3 and 2 to 10 wt.-% of B2O3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3, useful in the production of aluminum back electrodes of PERC silicon solar cells.
    Type: Application
    Filed: February 18, 2015
    Publication date: August 18, 2016
    Applicant: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Alistair Graeme Prince, Richard John Sheffield Young, Giovanna Laudisio, Gary Coultart, Kenneth Warren Hang, Ben Whittle
  • Process for the formation of a silver back electrode of a passivated emitter and rear contact silicon solar cell
    Patent number: 9343194
    Abstract: A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps: (1) providing a silicon wafer having an ARC layer on its front-side and a perforated dielectric passivation layer on its back-side, (2) applying and drying a silver paste to form a silver back electrode pattern on the perforated dielectric passivation layer on the back-side of the silicon wafer, and (3) firing the dried silver paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the silver paste has no or only poor fire-through capability and comprises particulate silver and an organic vehicle.
    Type: Grant
    Filed: November 24, 2010
    Date of Patent: May 17, 2016
    Assignee: EI DU PONT DE NEMOURS AND COMPANY
    Inventors: Alistair Graeme Prince, Richard John Sheffield Young, Giovanna Laudisio, Gary Coultart, Kenneth Warren Hang, Ben Whittle
  • Conductive compositions and processes for use in the manufacture of semiconductor devices—organic medium components
    Patent number: 9224885
    Abstract: Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: December 29, 2015
    Assignee: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Hideki Akimoto, Takuya Konno, Giovanna Laudisio, Patricia J. Ollivier, Michael Rose, Jerome David Smith, Richard John Sheffield Young
  • Process of forming an aluminum p-doped surface region of a semiconductor substrate
    Patent number: 9076919
    Abstract: A process for the formation of at least one aluminum p-doped surface region of a semiconductor substrate comprising the steps: (1) providing a semiconductor substrate, (2) applying and drying an aluminum paste on at least one surface area of the semiconductor substrate, (3) firing the dried aluminum paste, and (4) removing the fired aluminum paste with water, wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt. % of glass frit, based on total aluminum paste composition.
    Type: Grant
    Filed: November 2, 2012
    Date of Patent: July 7, 2015
    Assignee: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Kenneth Warren Hang, Alistair Graeme Prince, Michael Rose, Richard John Sheffield Young
  • Process for the production of a MWT silicon solar cell
    Patent number: 9054242
    Abstract: A process for the production of a MWT silicon solar cell comprising the steps: (1) providing an n-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) a p-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel, (b) at least one particulate p-type dopant, and (c) an organic vehicle.
    Type: Grant
    Filed: February 8, 2011
    Date of Patent: June 9, 2015
    Assignee: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Kenneth Warren Hang, Giovanna Laudisio, Alistair Graeme Prince, Richard John Sheffield Young
  • Aluminum pastes and use thereof in the production of passivated emitter and rear contact silicon solar cells
    Patent number: 8999203
    Abstract: An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO2, >0 to 7 wt.-% of Al2O3 and 2 to 10 wt.-% of B2O3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3, useful in the production of aluminum back electrodes of PERC silicon solar cells.
    Type: Grant
    Filed: November 23, 2010
    Date of Patent: April 7, 2015
    Assignee: E I du Pont de Nemours and Company
    Inventors: Alistair Graeme Prince, Richard John Sheffield Young, Giovanna Laudisio, Gary Coultart, Kenneth Warren Hang, Ben Whittle
  • Process of forming an aluminum p-doped surface region of an n-doped semiconductor substrate
    Patent number: 8927428
    Abstract: A process for the formation of at least one aluminum p-doped surface region of an n-type semiconductor substrate comprising the steps: (1) providing an n-type semiconductor substrate, (2) applying and drying an aluminum paste on at least one surface area of the n-type semiconductor substrate, (3) firing the dried aluminum paste, and (4) removing the fired aluminum paste with water, wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt. % of glass frit, based on total aluminum paste composition.
    Type: Grant
    Filed: November 2, 2012
    Date of Patent: January 6, 2015
    Assignee: E I du Pont de Nemours and Company
    Inventors: Kenneth Warren Hang, Alistair Graeme Prince, Michael Rose, Richard John Sheffield Young
  • CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - ORGANIC MEDIUM COMPONENTS
    Publication number: 20130340821
    Abstract: Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device.
    Type: Application
    Filed: March 13, 2013
    Publication date: December 26, 2013
    Applicant: EI DU PONT DE NEMOURS AND COMPANY
    Inventors: Hideki AKIMOTO, Takuya KONNO, Giovanna LAUDISIO, Patricia J. OLLIVIER, Michael ROSE, Jerome David SMITH, Richard John Sheffield YOUNG
  • Conductive compositions and processes for use in the manufacture of semiconductor devices—organic medium components
    Patent number: 8482089
    Abstract: Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device.
    Type: Grant
    Filed: April 13, 2012
    Date of Patent: July 9, 2013
    Assignee: E I du Pont de Nemours and Company
    Inventors: Hideki Akimoto, Takuya Konno, Giovanna Laudisio, Patricia J. Ollivier, Michael Rose, Jerome David Smith, Richard John Sheffield Young
  • Aluminum pastes and use thereof in the production of silicon solar cells
    Patent number: 8398896
    Abstract: Described are aluminum pastes comprising spherical-shaped and nodular-shaped particulate aluminum and an organic vehicle and their use in forming p-type aluminum back electrodes of silicon solar cells.
    Type: Grant
    Filed: September 4, 2009
    Date of Patent: March 19, 2013
    Assignee: E I du Pont de Nemours and Company
    Inventors: Peter Brenner, Alistair Graeme Prince, Richard John Sheffield Young
  • Method of manufacture of semiconductor device and conductive compositions used therein
    Patent number: 8394297
    Abstract: The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.
    Type: Grant
    Filed: March 8, 2011
    Date of Patent: March 12, 2013
    Assignee: E I du Pont de Nemours and Company
    Inventors: Yueli Wang, Richard John Sheffield Young, Alan Frederick Carroll, Kenneth Warren Hang
  • Method of manufacture of semiconductor device and conductive compositions used therein
    Patent number: 8313673
    Abstract: The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Mn-containing additive; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.
    Type: Grant
    Filed: October 23, 2008
    Date of Patent: November 20, 2012
    Assignee: E I du Pont de Nemours and Company
    Inventors: Yueli Y. Wang, Alan Frederrick Carroll, Kenneth Warren Hang, Richard John Sheffield Young
  • CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - ORGANIC MEDIUM COMPONENTS
    Publication number: 20120199192
    Abstract: Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device.
    Type: Application
    Filed: April 13, 2012
    Publication date: August 9, 2012
    Applicant: E. I. DU PONT DE NEMOURS AND COMPANY
    Inventors: HIDEKI AKIMOTO, Takuya Konno, Giovanna Laudisio, Patricia J. Ollivier, Michael Rose, Jerome David Smith, Richard John Sheffield Young
  • Process for the production of a MWT silicon solar cell
    Patent number: 8227292
    Abstract: A process for the production of a MWT silicon solar cell comprising the steps: (1) providing a p-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) an n-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel and (b) an organic vehicle.
    Type: Grant
    Filed: December 8, 2010
    Date of Patent: July 24, 2012
    Assignee: E I du Pont de Nemours and Company
    Inventors: Kenneth Warren Hang, Giovanna Laudisio, Alistair Graeme Prince, Richard John Sheffield Young
  • Aluminum thick film composition(s), electrode(s), semiconductor device(s), and methods of making thereof
    Patent number: 8192651
    Abstract: The present invention is directed to a thick film conductor composition comprised of (a) aluminum-containing powder; (b) one or more glass frit compositions; dispersed in (c) organic medium wherein at least one of said glass frit compositions has a softening point of less than 400° C.
    Type: Grant
    Filed: September 27, 2010
    Date of Patent: June 5, 2012
    Assignee: E. I. du Pont de Nemours and Company Dupont (UK) Limited
    Inventors: Richard John Sheffield Young, Michael Rose, Julie Ann Raby
  • Conductive compositions and processes for use in the manufacture of semiconductor devices—organic medium components
    Patent number: 8158504
    Abstract: Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device.
    Type: Grant
    Filed: May 28, 2009
    Date of Patent: April 17, 2012
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Hideki Akimoto, Takuya Konno, Giovanna Laudisio, Patricia J. Ollivier, Michael Rose, Jerome David Smith, Richard John Sheffield Young
  • METAL PASTES AND USE THEREOF IN THE PRODUCTION OF SILICON SOLAR CELLS
    Publication number: 20110240124
    Abstract: Metal pastes comprising (a) at least one electrically conductive metal powder selected from the group consisting of silver, copper and nickel, (b) at least one lead-containing glass frit with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3 and (c) an organic vehicle.
    Type: Application
    Filed: March 30, 2010
    Publication date: October 6, 2011
    Applicant: E.I. DU PONT DE NEMOURS AND COMPANY
    Inventors: Giovanna Laudisio, Richard John Sheffield Young, Peter James Willmott, Kenneth Warren Hang
  • Process of forming a silicon solar cell
    Patent number: 8017428
    Abstract: A process for the production of a silicon solar cell comprising application and firing of an aluminum paste which comprises magnesium oxide and/or magnesium compounds capable of forming magnesium oxide on firing on the back-side of a silicon wafer provided with a silicon nitride antireflective coating on its front-side and being contaminated with silicon nitride on its back-side, and firing the aluminum paste after its application.
    Type: Grant
    Filed: June 10, 2009
    Date of Patent: September 13, 2011
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Giovanna Laudisio, Kurt Richard Mikeska, Alistair Graeme Prince, Richard John Sheffield Young
  • Conductive compositions and processes for use in the manufacture of semiconductor devices: Mg-containing additive
    Patent number: 7998371
    Abstract: Described herein are a silicon semiconductor device and a conductive silver paste for use in the front side of a solar cell device.
    Type: Grant
    Filed: July 20, 2010
    Date of Patent: August 16, 2011
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Richard John Sheffield Young, Michael Rose, Kurt Richard Mikeska, Alan Frederick Carroll, Kenneth Warren Hang, Alistair Graeme Prince