Abstract: To provide an electrically conductive p-type wafer backside for semiconductor integrated circuit chips (die), a process is provided consisting of applying a thin layer of aluminum on a silicon dioxide free surface of the chip, followed by a layer of gold, then alloying the metals to diffuse the gold and traces of aluminum into the chip surface. The surface thus prepared can then be advantageously die attachable to a receiving surface by either eutectic alloy or conductive polymer techniques.

Abstract: A hermetically sealed thermal shock resistant ultraviolet light responsive read only semiconductor chip package includes a pair of mating ceramic members one of which mounts an ultraviolet sensitive semiconductor chip and the other which provides a window having an ultraviolet light transmitting glass sealingly mounted therein. The ultraviolet responsive chip is hermetically packaged by selecting a ceramic base member and a mating ceramic cap member, mounting an ultraviolet sensitive chip on the base and forming an ultraviolet transmitting window in the cap member and thereafter mating and sealing the members together so that the window covers the chip for permitting the transmission of ultraviolet rays thereto.

Abstract: To provide an electrically conductive p-type wafer backside for semiconductor integrated circuit chips (die), a process is provided consisting of applying a thin layer of aluminum on a silicon dioxide free surface of the chip, followed by a layer of gold, then alloying the metals to diffuse the gold and traces of aluminum into the chip surface. The surface thus prepared can then be advantageously die attachable to a receiving surface by either eutectic alloy or conductive polymer techniques.