Abstract: Optical fibers with previously unattainable characteristics and the method of producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to produce ZBLAN, Indium Fluoride, Germanate and Chalcogenide optical fibers and other similar optical fibers in a microgravity environment. The resulting optical fibers have unique molecular structures not attainable when optical fibers with the identical chemical composition are produced in a standard 1 gravity environment. The method of the invention requires a novel draw tower and modified preform, which are specifically designed to operate in microgravity environments. A lead wire is inserted into the preform that, when wound onto a spool in the draw tower, causes a fiber to form. The pull rate of the lead wire controls the diameter of the fiber.

Abstract: Optical fibers with previously unattainable characteristics and the method of producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to produce ZBLAN, Indium Fluoride, Germanate and Chalcogenide optical fibers and other similar optical fibers in a microgravity environment. The resulting optical fibers have unique molecular structures not attainable when optical fibers with the identical chemical composition are produced in a standard 1 gravity environment. The method of the invention requires a novel draw tower and modified preform, which are specifically designed to operate in microgravity environments. A lead wire is inserted into the preform that, when wound onto a spool in the draw tower, causes a fiber to form. The pull rate of the lead wire controls the diameter of the fiber.

Abstract: Wide band gap semiconductor wafers with previously unattainable characteristics and the method of processing and producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to process silicon carbide and other similar wide band gap semiconductors in a microgravity environment. The wafers are placed onto stackable containment systems that create an appropriate gap between each wafer to allow for homogeneous heating and processing. The resulting wide band gap semiconductors have unique molecular structures not attainable when wide band gap semiconductors with the identical chemical composition are produced in a standard 1 gravity environment.

Abstract: Wide band gap semiconductor wafers with previously unattainable characteristics and the method of processing and producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to process silicon carbide and other similar wide band gap semiconductors in a microgravity environment. The wafers are placed onto stackable containment systems that create an appropriate gap between each wafer to allow for homogeneous heating and processing. The resulting wide band gap semiconductors have unique molecular structures not attainable when wide band gap semiconductors with the identical chemical composition are produced in a standard 1 gravity environment.