Abstract: The invention relates to a holographic optical component and its use for reading the writing/reading heads. This application requires a minimum size and low weight for the holographic optical components. This is achieved in accordance with the invention by arranging a laser element and a grating structure, which is integrated on a waveguide layer and acts as a holographic optical system, on a large-sized surface side of a flat carrier element such that a light beam of the laser element impinges directly on the grating structure and is so converted by the grating structure that it exits from the component.

Abstract: A system for vapor phase deposition wherein a wafer is heated inside a reaction space and exposed to a gas flow in which the coating substance is contained in the form of an organometallic compound, and is deposited as a monocrystalline layer, by way of gas reactions, on to the wafer. On order to increase productivity, a holder supporting a stack of wafers is moved from a loading station into a reaction region and, with the aid of a stepping motor driving mechanism, is successively transferred through the reaction region, and finally placed into an unloading station. During the loading and the unloading of the holders supporting the wafers, the reaction region is prevented from being contaminated by the atmosphere. A transfer system for the wafers includes driving mechanisms which allow transfer of wafers through the reaction region in either of two opposing directions.

Abstract: An upper crucible part comprises several chambers containing a supersaturated growth solution with which a semiconductor wafer is coated with a monocrystalline semiconductor layer by way of epitaxial growth. The semiconductor wafer is contained in a cassette-shaped lower part which is moved underneath the upper part. The coating itself is effected within a protective-gas atmosphere within a reaction space which, by a diffusion furnace, is heated up to a temperature which is very exactly adhered to.

Abstract: A method for making the light-sensitive layer of a GaInAsP photodetector for the wavelength range from about 1350 nm to 1400 nm by liquid-phase epitaxy. A melt is saturated with phosphorus by introducing a first InP substrate into a ternary solution of GaAs and InAs in indium and maintaining the temperature constant at about 690.degree. C. for a few hours. After removal of the first substrate, the temperature is lowered by about 5.degree. C., and a second InP substrate, on which the desired layer is grown, is introduced into the melt. The cooling rate is approximately 1.degree. C./hr.