Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

Abstract: A plenum, positioned beneath a first coil and above a window disposed on a top portion of a processing chamber, has side walls and a top surface covering an upper surface of the window and has a first air inlet positioned at a center portion to receive airflow from a first air amplifier. The first air inlet includes holes to distribute the air across the window within the side walls to reduce hotspots at a center portion of the window. The plenum includes a second air inlet at an edge portion of the top surface to receive the airflow from a second air amplifier to reduce hotspots at an edge portion of the window, and a third air inlet between the center and edge portions of the top surface to receive the airflow from a third air amplifier to reduce hotspots at a middle portion of the window.

Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

Abstract: A substrate processing system includes a multi-zone cooling apparatus to provide cooling for all or substantially all of a window in a substrate processing chamber. In one aspect, the apparatus includes one or more plenums to cover all or substantially all of a window in a substrate processing chamber, including under an energy source for transformer coupled plasma in the substrate processing chamber. One or more air amplifiers and accompanying conduits provide air to the one or more plenums to provide air flow to the window. The conduits are connected to plenum inlets at various distances from the center, to direct airflow throughout the window and thus address center hot, middle hot, and edge hot conditions, depending on the processes being carried out in the chamber. In one aspect, the one or more plenums include a central air inlet, to direct air toward the center portion of the window, to address center hot conditions.

Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

Abstract: Embodiments of the present invention provide a method and system for processing microscopy images to enable localisation analysis of high density raw data, and thereby achieve higher spatial resolution than would otherwise be the case. This is achieved by exploiting temporal redundancies in the image data resulting from close-to emitters that would otherwise be resolved as a single emitter were they to emit or fluoresce at the same time, but which, by virtue of emitting or fluorescing at slightly different (yet potentially overlapping) times, can be subject to temporal filtering by different filters of different temporal bandwidth to resolve the two emitters. Effectively, the different temporal filters have different time constants which work together to effectively highlight the different emission or fluorescence times of the two emitters, to thereby allow the two close-to emitters to be separately resolved.

Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.

Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

Abstract: Embodiments of the present invention provide a method and system for processing microscopy images to enable localisation analysis of high density raw data, and thereby achieve higher spatial resolution than would otherwise be the case. This is achieved by exploiting temporal redundancies in the image data resulting from close-to emitters that would otherwise be resolved as a single emitter were they to emit or fluoresce at the same time, but which, by virtue of emitting or fluorescing at slightly different (yet potentially overlapping) times, can be subject to temporal filtering by different filters of different temporal bandwidth to resolve the two emitters. Effectively, the different temporal filters have different time constants which work together to effectively highlight the different emission or fluorescence times of the two emitters, to thereby allow the two close-to emitters to be separately resolved.

Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

Abstract: A plasma processing chamber and methods for operating the chamber are provided. An exemplary chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber. An inner side of dielectric window faces a plasma processing region that is above the electrostatic chuck and an outer side of the dielectric window is exterior to the plasma processing region. Inner and outer coils are disposed above the outer side of the dielectric window, and the inner and outer coils are connected to a first RF power source. A powered grid is disposed between the outer side of dielectric window and the inner and outer coils. The powered grid is connected to a second RF power source that is independent from the first RF power source.

Abstract: A substrate processing system includes a multi-zone cooling apparatus to provide cooling for all or substantially all of a window in a substrate processing chamber. In one aspect, the apparatus includes one or more plenums to cover all or substantially all of a window in a substrate processing chamber, including under an energy source for transformer coupled plasma in the substrate processing chamber. One or more air amplifiers and accompanying conduits provide air to the one or more plenums to provide air flow to the window. The conduits are connected to plenum inlets at various distances from the center, to direct airflow throughout the window and thus address center hot, middle hot, and edge hot conditions, depending on the processes being carried out in the chamber. In one aspect, the one or more plenums include a central air inlet, to direct air toward the center portion of the window, to address center hot conditions.

Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

Abstract: A plasma processing chamber and methods for operating the chamber are provided. An exemplary chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber. An inner side of dielectric window faces a plasma processing region that is above the electrostatic chuck and an outer side of the dielectric window is exterior to the plasma processing region. Inner and outer coils are disposed above the outer side of the dielectric window, and the inner and outer coils are connected to a first RF power source. A powered grid is disposed between the outer side of dielectric window and the inner and outer coils. The powered grid is connected to a second RF power source that is independent from the first RF power source.

Abstract: A plasma processing chamber and methods for operating the chamber are provided. An exemplary chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber. An inner side of dielectric window faces a plasma processing region that is above the electrostatic chuck and an outer side of the dielectric window is exterior to the plasma processing region. Inner and outer coils are disposed above the outer side of the dielectric window, and the inner and outer coils are connected to a first RF power source. A powered grid is disposed between the outer side of dielectric window and the inner and outer coils. The powered grid is connected to a second RF power source that is independent from the first RF power source.

Abstract: A system and method for providing a user of a hybrid electric vehicle (HEV) more flexibility and control regarding the selection of heating modes, without adversely affecting vehicle engine emissions. According to one embodiment, when the HEV is in a normal heating mode, the user is able to switch to an economy or deferred heating mode, so long as the switch takes place during the following ignition cycle. When the HEV is in an economy heating mode the user is able to switch to a normal heating mode right away, but is only allowed to do so once per ignition cycle. In both instances, the switch between heating modes is initiated by the user through a non-emissions related system, such as a vehicle infotainment module or climate control module.

Abstract: A vehicle system includes an electric motor, an internal combustion engine, and a heating system configured to transfer heat from the internal combustion engine to a passenger compartment of the vehicle. The system includes a controller configured to operate the electric motor and the internal combustion engine according to one of a plurality of drive cycle profiles. The controller selects the drive cycle profile based on an ambient temperature. The drive cycle profiles include a first drive cycle profile that commands power from the electric motor until the battery system reaches a predetermined state of charge and subsequently commands power from the internal combustion engine and a second drive cycle profile that commands power from the internal combustion engine and subsequently commands power from the electric motor.

Abstract: A vehicle system includes an electric motor, an internal combustion engine, and a heating system configured to transfer heat from the internal combustion engine to a passenger compartment of the vehicle. The system includes a controller configured to operate the electric motor and the internal combustion engine according to one of a plurality of drive cycle profiles. The controller selects the drive cycle profile based on an ambient temperature. The drive cycle profiles include a first drive cycle profile that commands power from the electric motor until the battery system reaches a predetermined state of charge and subsequently commands power from the internal combustion engine and a second drive cycle profile that commands power from the internal combustion engine and subsequently commands power from the electric motor.

Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.

Abstract: A method for charging a plug-in electric vehicle with an external power source. In an exemplary embodiment, the method receives one or more utility rate preferences from a user, determines the utility rates of a local utility company, determines the total charging time needed to charge the plug-in electric vehicle, uses the utility rate preferences, the utility rates and the total charging time to develop several charging options that are presented to a user, and charges the plug-in electric vehicle according to the charging option selection made by the user.