Patents by Inventor Richard S. Post

Richard S. Post has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5688382
    Abstract: A microwave plasma deposition source including a vacuum chamber for containing a substance to be energized in a plasma with microwave energy, a coaxial microwave feed ending in the chamber, a sputter target in the chamber and electrically isolated from the coaxial feed, and a second substrate spaced from the sputter target for defining a plasma volume between the substrates.
    Type: Grant
    Filed: August 31, 1995
    Date of Patent: November 18, 1997
    Assignee: Applied Science and Technology, Inc.
    Inventors: Matthew M. Besen, Lawrence Bourget, William M. Holber, Donald K. Smith, Richard S. Post
  • Patent number: 5518759
    Abstract: A process for depositing diamond on a substrate using a microwave plasma generator including introducing a feed which includes diamond forming constituents in a desired ratio to the microwave plasma generator, and providing sufficient microwave power to the microwave plasma generator to produce a greenish-colored plasma which emits a spectrum monitored to maintain a relative emission intensity ratio of two of the constituents in a predetermined range, for depositing high quality diamond at an extremely high rate on the substrate placed proximate or in the plasma.
    Type: Grant
    Filed: January 23, 1995
    Date of Patent: May 21, 1996
    Assignee: Applied Science and Technology, Inc.
    Inventors: Evelio Sevillano, Lawrence P. Bourget, Richard S. Post
  • Patent number: 5405645
    Abstract: A process for depositing diamond on a substrate using a microwave plasma generator including providing carbon, hydrogen and oxygen in a desired ratio to the microwave plasma generator, and providing sufficient microwave power to the microwave plasma generator to produce a greenish-colored plasma with the C.sub.2 emission at 5165 Angstroms (.ANG.) at a level of from 0.5 to 50 times the atomic hydrogen alpha emission level at 6563 .ANG., for depositing high quality diamond at an extremely high rate on the substrate placed proximate or in the plasma.
    Type: Grant
    Filed: July 28, 1993
    Date of Patent: April 11, 1995
    Assignee: Applied Science and Technology Inc.
    Inventors: Evelio Sevillano, Lawrence P. Bourget, Richard S. Post
  • Patent number: 5279866
    Abstract: A process for depositing on a sample surface a smooth, wear-resistant coating including the steps of providing a vacuum processing chamber for holding the sample to be coated, introducing into the processing chamber coating-forming reactants for deposition on the sample surface, and supplying to the processing chamber a plasma stream with an electron temperature of up to 10 eV, a directed ion energy of 5 to 50 eV, and an ion flux at the sample in the range of 0.1 to 100 milliamps per square centimeter for transferring energy to the deposited material to form the smooth coating.
    Type: Grant
    Filed: June 10, 1993
    Date of Patent: January 18, 1994
    Assignee: Applied Science and Technology Inc.
    Inventors: Lawrence Bourget, Richard S. Post