Abstract: A wearable armband having a secure pocket defined therein for holding a user's personal cellphone or similar device. The armband may incorporate additional liner panels allowing for fast and efficient removal and insertion of the user's device without removing the armband while simultaneously providing a secure hold to prevent movement or unwanted removal of the device from the armband.

Abstract: A running belt has a pouch that defines a primary compartment sized to receive at least a smartphone therein, and there is a divider within the compartment to divide the compartment into a front portion and a rear portion, wherein at least one of the front portion and the rear portion is adapted to retain the smartphone therein, and the divider defines an interior pocket that is divided into at least two portions by a panel within the pocket of the divider, and the pocket is sized to receive an item that is smaller than the smartphone therein, and the panel maintains a substantially constant shape of the divider when the item is inserted into or removed from the pocket and when the smartphone is inserted into or removed from the primary compartment.

Abstract: Direct contact to shallow junctions in integrated circuits and interconnection between these contacts is achievable by utilizing a specific aluminum CVD process. In this process the aluminum is deposited utilizing a triisobutyl aluminum precursor onto a substrate having a nucleation layer, e.g. a titanium nitride layer. By appropriate choice of this nucleation layer to control the nucleation of the depositing aluminum, suitable contact is made while avoiding void defects present in the absence of such layer.

Abstract: Magnetic bubble devices having planar geometry are produced by a particular sequence of processing steps. This sequence of processing steps includes the sequential deposition on a garnet material of an insulating material, an electrically conductive material, a second insulating material, and a material such as permalloy. The upmost layer is then patterned by conventional techniques. The pattern thus produced is used as a mask and the exposed underlying insulating layer is removed. The exposed metal conducting layer is then patterned and etched in a pattern different from that of the permalloy and second insulating layers by a process such as selective plasma etching that does not substantially degrade the exposed dielectric material or the permalloy. The results are a device with layers having planar geometry.

Abstract: Many of the stacking faults which occur after oxidation of silicon wafers are substantially eliminated by the use of an argon-hydrochloric anneal of the wafers just prior to oxidation. This anneal, which is carried out in the same chamber in which oxidation is carried out, removes impurities from the surface of the wafers and thereby limits the sites at which stacking faults form after oxidation.

Abstract: An improved radio frequency (rf) powered radial flow cylindrical reactor utilizes a gas shield which substantially limits the glow plasma discharge reaction to a section of the reactor over the semiconductor substrates which are to be coated. The gas shield permits the use of higher rf input power which contributes to the formation of protective films that have desirable physical and electrical characteristics.