Abstract: The present invention relates to an inflatable, moveable structure comprising: a fluid source; at least one chamber comprising a substantially inelastic outer membrane defining a cavity extending therebetween, in which the or each cavity is in fluid communication with the fluid source, and in which the or each chamber further comprises at least one first valve located on and extending through the outer membrane thereof; and a control system.

Abstract: A sensor comprising a whisker shaft and a follicle is provided. The shaft has a root end and a tip end and the shaft tapers from the root end to the tip end so that the root end is wider and the tip end is narrower. The root end is pivotably mounted in the follicle.

Abstract: A sensor comprising a whisker shaft and a follicle is provided. The shaft has a root end and a tip end and the shaft tapers from the root end to the tip end so that the root end is wider and the tip end is narrower. The root end is pivotably mounted in the follicle.

Abstract: A sensor comprising a whisker shaft and a follicle is provided. The shaft has a root end and a tip end and the shaft tapers from the root end to the tip end so that the root end is wider and the tip end is narrower. The root end is pivotably mounted in the follicle.

Abstract: An adhesive may be applied to a surface of a reusable carrier. Metal foil may be attached to the adhesive to couple the metal foil to the surface of the reusable carrier. The metal foil may be patterned without damaging the reusable carrier. A semiconductor structure (e.g., a solar cell) may be attached to the patterned metal foil. The reusable carrier may then be removed. In some embodiments, the semiconductor structure may be encapsulated using an encapsulant, with the adhesive being compatible with the encapsulant.

Abstract: Diffusion regions of a solar cell are formed using a blanket layer of film that is doped with dopants of a first conductivity type. Dopants of a second conductivity type are implanted in select regions of the blanket layer of film to form dopant source regions of the second conductivity type. Diffusion regions of the solar cell are formed by diffusing dopants of the first conductivity type and dopants of the second conductivity type from the blanket layer of film into an underlying silicon material. The blanket layer of film may be a P-type dopant source layer doped with boron, with phosphorus being implanted in select regions of the P-type dopant source layer to form N-type dopant source regions in the P-type dopant source layer.

Abstract: An adhesive may be applied to a surface of a reusable carrier. Metal foil may be attached to the adhesive to couple the metal foil to the surface of the reusable carrier. The metal foil may be patterned without damaging the reusable carrier. A semiconductor structure (e.g., a solar cell) may be attached to the patterned metal foil. The reusable carrier may then be removed. In some embodiments, the semiconductor structure may be encapsulated using an encapsulant, with the adhesive being compatible with the encapsulant.

Abstract: Enhanced adhesion of seed layers for solar cell conductive contacts and methods of forming solar cell conductive contacts are described. For example, a method of fabricating a solar cell includes forming an adhesion layer above an emitter region of a substrate. A metal seed paste layer is formed on the adhesion layer. The metal seed paste layer and the adhesion layer are annealed to form a conductive layer in contact with the emitter region of the substrate. A conductive contact for the solar cell is formed from the conductive layer.

Abstract: An adhesive may be applied to a surface of a reusable carrier. Metal foil may be attached to the adhesive to couple the metal foil to the surface of the reusable carrier. The metal foil may be patterned without damaging the reusable carrier. A semiconductor structure (e.g., a solar cell) may be attached to the patterned metal foil. The reusable carrier may then be removed. In some embodiments, the semiconductor structure may be encapsulated using an encapsulant, with the adhesive being compatible with the encapsulant.

Abstract: Enhanced adhesion of seed layers for solar cell conductive contacts and methods of forming solar cell conductive contacts are described. For example, a method of fabricating a solar cell includes forming an adhesion layer above an emitter region of a substrate. A metal seed paste layer is formed on the adhesion layer. The metal seed paste layer and the adhesion layer are annealed to form a conductive layer in contact with the emitter region of the substrate. A conductive contact for the solar cell is formed from the conductive layer.

Abstract: Diffusion regions of a solar cell are formed using a blanket layer of film that is doped with dopants of a first conductivity type. Dopants of a second conductivity type are implanted in select regions of the blanket layer of film to form dopant source regions of the second conductivity type. Diffusion regions of the solar cell are formed by diffusing dopants of the first conductivity type and dopants of the second conductivity type from the blanket layer of film into an underlying silicon material. The blanket layer of film may be a P-type dopant source layer doped with boron, with phosphorus being implanted in select regions of the P-type dopant source layer to form N-type dopant source regions in the P-type dopant source layer.

Abstract: Infrared imaging at wavelengths longer than the silicon bandgap energy (>1100 nm) typically require expensive focal plane arrays fabricated from compound semiconductors (InSb or HgCdTe) or use of slower silicon microbolometer technology. Furthermore, these technologies are available in relatively small array sizes, whereas silicon focal plane arrays are easily available with 10 megapixels or more array size. A new technique is disclosed to up convert infrared light to wavelengths detectable by silicon focal plane arrays, or other detector technologies, thereby enabling a low-cost, high pixel count infrared imaging system.

Abstract: Examples of device structures utilizing layers of rare earth oxides to perform the tasks of strain engineering in transitioning between semiconductor layers of different composition and/or lattice orientation and size are given. A structure comprising a plurality of semiconductor layers separated by transition layer(s) comprising two or more rare earth compounds operable as a sink for structural defects is disclosed.

Abstract: The use of rare-earth (RE and O, N, P) based materials to transition between two different semiconductor materials and enable up and/or down conversion of incident radiation is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacing enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds.

Abstract: The use of rare-earth (REO, N, P) based materials to covert long wavelength photons to shorter wavelength photons that can be absorbed in a photovoltaic device (up-conversion) and (REO, N, P) materials which can absorb a short wavelength photon and re-emit one (downshifting) or more longer wavelength photons is disclosed. The wide spectral range of sunlight overlaps with a multitude of energy transitions in rare-earth materials, thus offering multiple up-conversion pathways. The refractive index contrast of rare-earth materials with silicon enables a DBR with >90% peak reflectivity and a stop band greater than 150 nm.

Abstract: The use of rare-earth (RE+O, N, P) based materials to transition between two semiconductor materials is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacings enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds. Disclosed embodiments include tandem solar cells.

Abstract: The use of rare-earth (RE+O, N, P) based materials to transition between two semiconductor materials is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacings enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds. Disclosed embodiments include tandem solar cells.

Abstract: The use of rare-earth (RE and O, N, P) based materials to transition between two different semiconductor materials and enable up and/or down conversion of incident radiation is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacing enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds.

Abstract: Examples of device structures utilizing layers of rare earth oxides to perform the tasks of strain engineering in transitioning between semiconductor layers of different composition and/or lattice orientation and size are given. A structure comprising a plurality of semiconductor layers separated by transition layer(s) comprising two or more rare earth compounds operable as a sink for structural defects is disclosed.

Abstract: The use of rare-earth (REO, N, P) based materials to covert long wavelength photons to shorter wavelength photons that can be absorbed in a photovoltaic device (up-conversion) and (REO, N, P) materials which can absorb a short wavelength photon and re-emit one (downshifting) or more longer wavelength photons is disclosed. The wide spectral range of sunlight overlaps with a multitude of energy transitions in rare-earth materials, thus offering multiple up-conversion pathways. The refractive index contrast of rare-earth materials with silicon enables a DBR with >90% peak reflectivity and a stop band greater than 150 nm.