Abstract: Provided is a reactive ion etching (RIE) method for use in altering the flatness of a slider, whereby a slider or row of sliders is placed within a RIE apparatus. The apparatus comprises essentially an electrode within a chamber having an inlet and an outlet. The electrode is controlled by a bias power source. A source power is provided to the chamber to generate the plasma, wherein a gas or gas mixture is first introduced to the chamber and the source power is adjusted to maximize the plasma composition of ions and reactive neutral species. The ions and reactive neutral species are generated from reactive chemical species such as CHF3 and other F-containing species. An inert gas such as Argon may also be present. Typically, TiC within the Al2O3 matrix of the slider substrate surface is etched at a faster rate than other substrate species.

Abstract: A soft magnetic film includes a laminated structure having an alternating plurality of first magnetic and second magnetic film. The first magnetic films is of a predetermined thickness range and is made of a magnetic alloy of nickel, iron and nitrogen with the nitrogen present from greater than zero to 20 atomic percent. The second magnetic film is of a predetermined thickness range and is made of a magnetic alloy of iron and nitrogen with the nitrogen present from greater than zero to about 20 atomic percent. The films can be annealed in an applied magnetic field. The multilayer films have application as pole pieces and shields in magnetic heads. The magnetic heads are for use in dynamic storage systems including disk and tape media.