Patents by Inventor Rick Jerome
Rick Jerome has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11982611Abstract: A method includes providing a cartridge and the cartridge includes a slot for receiving a microfluidic chip having a set of first channels. The cartridge also includes a set of second channels and each channel of the set of second channels is coupleable to a different channel of the set of first channels during use with the microfluidic chip. The cartridge also includes an indent configured for engagement and alignment of the cartridge during use. The method also includes inserting the cartridge into a device, such that the cartridge engages a first biasing member of the device configured for alignment of the cartridge in a first direction. The first biasing member is configured to bias movement of the cartridge into locking position with a notch of the device.Type: GrantFiled: March 20, 2018Date of Patent: May 14, 2024Assignee: NANOCELLECT BIOMEDICAL, INC.Inventors: Sunghwan Cho, Jose Manuel Morachis, Ivan Gagne, Rick Segil, William Arthur Alaynick, Zhe Mei, Sean Phillips, Chien-Chun Yang, Dongseob Yun, Michael Jerome Benchimol, Manna Doud, Nicholas Sullivan, Constance Ardila
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Patent number: 11963999Abstract: The invention relates to the identification of new therapeutic methods for the FGF21 polypeptide or protein, or mutants, variants, and fusions thereof, for instance, in treating metabolic diseases associated defects in insulin signaling (e.g. insulin receptor mutation disorders (INSR disorders) and/or autoimmune insulin receptor disorders (Type B insulin Resistance)), defects in insulin production such as type 1 diabetes mellitus, mixed dyslipidemia, nonalcoholic fatty liver disease (NAFLD), and other metabolic disorders, and various lipodystrophies such as HIV-HAART induced partial-lipodystrophy, and in reducing the mortality and morbidity of critically ill patients.Type: GrantFiled: May 9, 2019Date of Patent: April 23, 2024Assignee: Novartis AGInventors: John Louis Diener, Jiaping Gao, Rick Jerome Schiebinger
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Publication number: 20230352515Abstract: Implementations of image sensor devices may include a through-silicon-via (TSV) formed in a backside of an image sensor device and extending through a material of a die to a metal landing pad. The metal landing pad may be within a contact layer. The devices may include a TSV edge seal ring surrounding a portion of the TSV in the contact layer and extending from a first surface of the contact layer into the contact layer to a depth coextensive with a depth of the TSV.Type: ApplicationFiled: July 5, 2023Publication date: November 2, 2023Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter GAMBINO, Rick JEROME, David T. PRICE
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Patent number: 11756977Abstract: Implementations of image sensor devices may include a through-silicon-via (TSV) formed in a backside of an image sensor device and extending through a material of a die to a metal landing pad. The metal landing pad may be within a contact layer. The devices may include a TSV edge seal ring surrounding a portion of the TSV in the contact layer and extending from a first surface of the contact layer into the contact layer to a depth coextensive with a depth of the TSV.Type: GrantFiled: June 21, 2018Date of Patent: September 12, 2023Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter Gambino, Rick Jerome, David T. Price
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Publication number: 20200101137Abstract: The invention relates to the identification of new therapeutic methods for the FGF21 polypeptide or protein, or mutants, variants, and fusions thereof, for instance, in treating metabolic diseases associated defects in insulin signaling (e.g. insulin receptor mutation disorders (INSR disorders) and/or autoimmune insulin receptor disorders (Type B insulin Resistance)), defects in insulin production such as type 1 diabetes mellitus, mixed dyslipidemia, nonalcoholic fatty liver disease (NAFLD), and other metabolic disorders, and various lipodystrophies such as HIV-HAART induced partial-lipodystrophy, and in reducing the mortality and morbidity of critically ill patients.Type: ApplicationFiled: May 9, 2019Publication date: April 2, 2020Applicant: Novartis AGInventors: John Louis DIENER, Jiaping GAO, Rick Jerome SCHIEBINGER
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Publication number: 20190393257Abstract: Implementations of image sensor devices may include a through-silicon-via (TSV) formed in a backside of an image sensor device and extending through a material of a die to a metal landing pad. The metal landing pad may be within a contact layer. The devices may include a TSV edge seal ring surrounding a portion of the TSV in the contact layer and extending from a first surface of the contact layer into the contact layer to a depth coextensive with a depth of the TSV.Type: ApplicationFiled: June 21, 2018Publication date: December 26, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter Gambino, Rick Jerome, David T. Price
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Patent number: 9711556Abstract: An image sensor structure includes a region of semiconductor material having a first major surface and a second major surface. A pixel structure is within the region of semiconductor material and includes a plurality of doped regions and a plurality of conductive structures. A metal-filled trench structure extends from the first major surface to the second major surface. A first contact structure is electrically connected to a first surface of the conductive trench structure, and a second contact structure electrically connected to a second surface of the conductive trench structure. In one embodiment, the second major surface is configured to receive incident light.Type: GrantFiled: December 12, 2016Date of Patent: July 18, 2017Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Rick Jerome, David T. Price, Sungkwon C. Hong, Gordon M. Grivna
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Publication number: 20170092669Abstract: An image sensor structure includes a region of semiconductor material having a first major surface and a second major surface. A pixel structure is within the region of semiconductor material and includes a plurality of doped regions and a plurality of conductive structures. A metal-filled trench structure extends from the first major surface to the second major surface. A first contact structure is electrically connected to a first surface of the conductive trench structure, and a second contact structure electrically connected to a second surface of the conductive trench structure. In one embodiment, the second major surface is configured to receive incident light.Type: ApplicationFiled: December 12, 2016Publication date: March 30, 2017Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Rick JEROME, David T. PRICE, Sungkwon C. HONG, Gordon M. Grivna
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Publication number: 20170065678Abstract: The invention relates to the identification of new therapeutic methods for the FGF21 polypeptide or protein, or mutants, variants, and fusions thereof, for instance, in treating metabolic diseases associated defects in insulin signaling (e.g. insulin receptor mutation disorders (INSR disorders) and/or autoimmune insulin receptor disorders (Type B insulin Resistance)), defects in insulin production such as type 1 diabetes mellitus, mixed dyslipidemia, nonalcoholic fatty liver disease (NAFLD), and other metabolic disorders, and various lipodystrophies such as HIV-HAART induced partial-lipodystrophy, and in reducing the mortality and morbidity of critically ill patients.Type: ApplicationFiled: March 9, 2015Publication date: March 9, 2017Applicant: NOVARTIS AGInventors: John Louis DIENER, Jiaping GAO, Rick Jerome SCHIEBINGER
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Patent number: 9570494Abstract: In one embodiment, a method for forming a backside illuminated image sensor includes providing a region of semiconductor material having a first major surface and a second major surface configured to receive incident light. A pixel structure is formed within the region of semiconductor material adjacent the first major surface. Thereafter, a trench structure comprising a metal material is formed extending through the region of semiconductor material. A first surface of the trench structure is adjacent the first major surface of the region of semiconductor material and a second surface adjoining the second major surface of the region of semiconductor material. A first contact structure is electrically connected to one surface of the conductive trench structure and a second contact structure is electrically connected to an opposing second surface.Type: GrantFiled: September 29, 2015Date of Patent: February 14, 2017Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Rick Jerome, David T. Price, Sungkwon C. Hong, Gordon M. Grivna