Abstract: The gap width in a threshold voltage (Vt) distribution for a 3D NAND Flash cell is improved by performing touchup program on a selected portion of the word lines in a block after all of the word lines in the block have been programmed.

Abstract: After reading a 3D (three dimensional) NAND array, the wordlines of the 3D NAND array can be transitioned to ground in a staggered manner. The 3D NAND array includes a 3D stack with multiple wordlines vertically stacked, including a bottom-most wordline, a top-most wordline, and middle wordlines between the bottom-most wordline and the top-most wordline. A controller that controls the reading can set the multiple wordlines to a read voltage for reading operations and then transition a selected wordline of the multiple wordlines from the read voltage to ground prior to transitioning the other wordlines to ground. Thus, the controller will transition the other wordlines from the read voltage to ground after a delay.

Abstract: Systems, apparatuses and methods may provide for technology that programs a first plurality of error correction codewords to a first set of pages in a block of non-volatile memory, wherein the first plurality of error correction codewords are programmed at a first density. The technology may also program a second plurality of error correction codewords to a second set of pages in the block, wherein the second plurality of error correction codewords are programmed at a second density. In one example, the first density and the second density are different from one another.