Patents by Inventor Riichi Ogawara

Riichi Ogawara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9312454
    Abstract: Provided is a novel coated phosphor capable of effectively suppressing the adverse effects of hydrogen sulfide gas generated by the reaction between a sulfur-containing phosphor and moisture in the air. Provided is a sulfur-containing phosphor having a configuration in which ZnO compound containing Zn and O is present on the surface of a sulfur-containing phosphor having a host material which includes sulfur.
    Type: Grant
    Filed: December 6, 2011
    Date of Patent: April 12, 2016
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Jun-ichi Itoh, Asuka Sasakura, Masaaki Inamura, Riichi Ogawara, Akinori Kumagai
  • Patent number: 8912553
    Abstract: Provided is a novel coated phosphor capable of effectively suppressing the adverse effects of hydrogen sulfide gas generated by the reaction between a sulfur-containing phosphor and moisture in the air. Provided is a sulfur-containing phosphor having a configuration in which ZnO compound containing Zn and O is present on the surface of a sulfur-containing phosphor having a host material which includes sulfur.
    Type: Grant
    Filed: December 6, 2011
    Date of Patent: December 16, 2014
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Jun-ichi Itoh, Asuka Sasakura, Masaaki Inamura, Riichi Ogawara, Akinori Kumagai
  • Publication number: 20130256715
    Abstract: Provided is a novel coated phosphor capable of effectively suppressing the adverse effects of hydrogen sulfide gas generated by the reaction between a sulfur-containing phosphor and moisture in the air. Provided is a sulfur-containing phosphor having a configuration in which ZnO compound containing Zn and O is present on the surface of a sulfur-containing phosphor having a host material which includes sulfur.
    Type: Application
    Filed: December 6, 2011
    Publication date: October 3, 2013
    Applicant: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Jun-ichi Itoh, Asuka Sasakura, Masaaki Inamura, Riichi Ogawara, Akinori Kumagai
  • Publication number: 20120081001
    Abstract: A green emitting phosphor is provided, allowing the internal quantum efficiency to be increased. The green emitting phosphor comprises a mother crystal containing Sr, Ga and S, and a luminescent center, characterized in that, in an XRD pattern, the ratio of the diffraction intensity of the maximum peak appearing at diffraction angle 2?=14 to 20° over the diffraction intensity of the maximum peak appearing at diffraction angle 2?=21 to 27° is 0.4 or greater.
    Type: Application
    Filed: December 15, 2011
    Publication date: April 5, 2012
    Applicant: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Riichi Ogawara, Asuka Sasakura, Jun-ichi Itoh, Taizou Morinaka
  • Patent number: 8147717
    Abstract: A green emitting phosphor is provided, allowing the internal quantum efficiency to be increased. The green emitting phosphor comprises a mother crystal containing Sr, Ga and S, and a luminescent center, characterized in that, in an XRD pattern, the ratio of the diffraction intensity of the maximum peak appearing at diffraction angle 2?=14 to 20° over the diffraction intensity of the maximum peak appearing at diffraction angle 2?=21 to 27° is 0.4 or greater.
    Type: Grant
    Filed: January 7, 2009
    Date of Patent: April 3, 2012
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Riichi Ogawara, Asuka Sasakura, Jun-ichi Itoh, Taizou Morinaka
  • Publication number: 20110114985
    Abstract: A green emitting phosphor is provided, allowing the internal quantum efficiency to be increased. A green emitting phosphor is proposed, which is a green emitting phosphor comprising a mother crystal containing Sr, Ga and S, and a luminescent center, characterized in that, in an XRD pattern, the ratio of the diffraction intensity of the maximum peak appearing at diffraction angle 2?=14 to 20° over the diffraction intensity of the maximum peak appearing at diffraction angle 2?=21 to 27° is 0.4 or greater.
    Type: Application
    Filed: January 7, 2009
    Publication date: May 19, 2011
    Applicant: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Riichi Ogawara, Asuka Sasakura, Jun-ichi Itoh, Taizou Morinaka