Abstract: In one embodiment, a shape measuring apparatus includes a memory to store, as information regarding a pattern provided in a sample, two-dimensional information regarding a plane parallel with a surface of the sample, and an irradiation module to irradiate the surface of the sample with a beam. The apparatus further includes an irradiation controller to control an irradiation direction of the beam to the sample in accordance with the two-dimensional information, and an acquisition module to acquire scattering intensity data regarding the beam reflected by the surface of the sample. The apparatus further includes a calculator to calculate predicted scattering intensity data regarding the beam in accordance with a shape model that represents a three-dimensional shape of the pattern with a parameter, and a measurement module to measure the three-dimensional shape by adjusting the parameter and fitting the scattering intensity data and the predicted scattering intensity data.

Abstract: A method forming a pattern includes a process in which self-assembly material is formed on the substrate where on which a fiducial mark is formed, and the self-assembly material is separated in micro phase to form a self-assembled pattern. The position error from a predetermined formation position of the self-assembled pattern is measured on the basis of the fiducial mark, and a pattern for an alignment as well as a peripheral circuit pattern are formed on the substrate. The formation position of at least one pattern among the pattern for alignment and peripheral circuit pattern is corrected using the position error.

Abstract: A method forming a pattern includes a process in which self-assembly material is formed on the substrate where on which a fiducial mark is formed, and the self-assembly material is separated in micro phase to form a self-assembled pattern. The position error from a predetermined formation position of the self-assembled pattern is measured on the basis of the fiducial mark, and a pattern for an alignment as well as a peripheral circuit pattern are formed on the substrate. The formation position of at least one pattern among the pattern for alignment and peripheral circuit pattern is corrected using the position error.