Abstract: According to one embodiment, a semiconductor device manufacturing method includes forming a stacked film with alternating first-type sacrificial layers and second-type sacrificial layers, then removing the first-type sacrificial layers from the stacked film to leave the second-type sacrificial layers with spaces therebetween. The second-type sacrificial layers are then each replaced with an insulating layer after removing the first-type sacrificial layers. After the second-type sacrificial layers are replaced with the insulating layer, a conductive layer is formed inside the spaces formed by removing the first-type sacrificial layers.

Abstract: A film deposition device according to the present embodiment includes a chamber. A mounting part is provided in the chamber to allow a substrate to be placed thereon and contains aluminum nitride. A heater is provided in the mounting part. A supply part is configured to supply a process gas for film deposition to the substrate on the mounting part in the chamber. A cover film covers a mounting surface of the mounting part on which the substrate is placed, a back surface opposite to the mounting surface, and a side surface between the mounting surface and the back surface and contains yttrium oxide.

Abstract: A shower head includes a face plate having an outer peripheral portion and a plurality of gas injection holes disposed inside the outer peripheral portion, a movable portion facing the face plate and having a gas introduction passage, and a seal interposed between the outer peripheral portion of the face plate and the movable portion. The movable portion is arranged to move, in the first direction, between a first position in which the movable portion is coupled to the face plate by interposing the seal between the movable portion and the face plate, and the gas introduction passage communicates with the inside of the chamber via the gas injection holes, and a second position in which the movable portion is separated from the face plate, and the gas introduction passage communicates with the inside of the chamber via a gap between the movable portion and the face plate.

Abstract: A shower head includes a face plate having an outer peripheral portion and a plurality of gas injection holes disposed inside the outer peripheral portion, a movable portion facing the face plate and having a gas introduction passage, and a seal interposed between the outer peripheral portion of the face plate and the movable portion. The movable portion is arranged to move, in the first direction, between a first position in which the movable portion is coupled to the face plate by interposing the seal between the movable portion and the face plate, and the gas introduction passage communicates with the inside of the chamber via the gas injection holes, and a second position in which the movable portion is separated from the face plate, and the gas introduction passage communicates with the inside of the chamber via a gap between the movable portion and the face plate.

Abstract: According to one embodiment, a solid state imaging device includes a semiconductor layer and an anti-reflection film. The semiconductor layer performs photoelectric conversion. The anti-reflection film is provided on the semiconductor layer. The anti-reflection film is conductive.

Abstract: According to one embodiment, a gas supply member is provided with a gas supply passage including a gas flow channel with a first diameter, and an exhaust port connected to one end portion of the gas flow channel and provided to a surface of a downstream side of the gas supply member. An yttria-containing film is formed on a surface constituting the exhaust port and the surface of the downstream side of the gas supply member. At least a part of the surface constituting the exhaust port is formed with a curved surface.

Abstract: According to one embodiment, a solid state imaging device includes a semiconductor layer, an intermediate film, an anti-reflection film and a conductive film. The semiconductor layer performs photoelectric conversion. The intermediate film is provided on the semiconductor layer. The intermediate film has a negative charge. The anti-reflection film is provided on the intermediate film. The conductive film is provided on the anti-reflection film.

Abstract: According to one embodiment, a solid state imaging device includes a semiconductor layer, a first layer, a second layer and third layer. The semiconductor layer performs photoelectric conversion. The first layer has a first refractive index. The second layer is provided between the first layer and the semiconductor layer, the second layer includes a metal oxide and has a second refractive index not greater than the first refractive index. The third layer is provided between the first layer and the second layer. The third layer has a third refractive index and includes an element bonding covalently with oxygen. The third refractive index is not greater than the first refractive index.

Abstract: According to one embodiment, a gas supply member is provided with a gas supply passage including a gas flow channel with a first diameter, and an exhaust port connected to one end portion of the gas flow channel and provided to a surface of a downstream side of the gas supply member. An yttria-containing film is formed on a surface constituting the exhaust port and the surface of the downstream side of the gas supply member. At least a part of the surface constituting the exhaust port is formed with a curved surface.

Abstract: Provided are a piezoelectric film, a piezoelectric film element, a liquid discharge head using the piezoelectric film element, and a liquid discharge apparatus. A piezoelectric film element that can be suitably used for a discharge pressure-generating element of a liquid discharge head is obtained by using an epitaxial oxide film composed of a perovskite composite oxide constituted according to a general formula ABO3 as a piezoelectric film. The epitaxial oxide film has at least an A domain and a B domain having a crystal orientation deviation with respect to each other. The crystal orientation deviation between the A domain and the B domain is less than 2°.

Abstract: The invention provides a piezoelectric film having a large piezoelectric property, and a piezoelectric element, a liquid discharge head and a liquid discharge apparatus utilizing the same. The piezoelectric film is formed by an epitaxial oxide of <100> orientation having at least a tetragonal crystal structure, in which the oxide is a perovskite type composite oxide represented by a general formula ABO3 and contains at least domains C, D and E of [100] orientation having mutual deviation in crystal direction, where the angular deviation between [100] directions in domains C and D, in domains D and E, in domains C and E and in domains D and E are respectively 5° or less, 5° or less, 0.3° or less, and 0.3° or more, and the angular deviation between [001] directions in domains C and E and in domains D and E are respectively 1.0° or more, and 1.0° or more.

Abstract: The invention provides a piezoelectric film having a large piezoelectric property, and a piezoelectric element, a liquid discharge head and a liquid discharge apparatus utilizing the same. The piezoelectric film is formed by an epitaxial oxide of <100> orientation having at least a tetragonal crystal structure, in which the oxide is a perovskite type composite oxide represented by a general formula ABO3 and contains at least domains C, D and E of [100] orientation having mutual deviation in crystal direction, where the angular deviation between [100] directions in domains C and D, in domains D and E, in domains C and E and in domains D and E are respectively 5° or less, 5° or less, 0.3° or less, and 0.3° or more, and the angular deviation between [001] directions in domains C and E and in domains D and E are respectively 1.0° or more, and 1.0° or more.

Abstract: Provided are a piezoelectric film, a piezoelectric film element, a liquid discharge head using the piezoelectric film element, and a liquid discharge apparatus. A piezoelectric film element that can be suitably used for a discharge pressure-generating element of a liquid discharge head is obtained by using an epitaxial oxide film composed of a perovskite composite oxide constituted according to a general formula ABO3 as a piezoelectric film. The epitaxial oxide film has at least an A domain and a B domain having a crystal orientation deviation with respect to each other. The crystal orientation deviation between the A domain and the B domain is less than 2°.