Patents by Inventor Rimpei KINDAICHI

Rimpei KINDAICHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SiC SINGLE CRYSTAL GROWTH APPARATUS AND GROWTH METHOD OF SiC SINGLE CRYSTAL
    Publication number: 20190330761
    Abstract: A SiC single crystal growth apparatus of an embodiment includes a seed crystal installation part in which a seed crystal is installable at a position thereof which faces a raw material; a guide member which extends from a periphery of the seed crystal installation part toward the raw material and guides crystal growth performed inside the guide member; and a heat-insulating material which is movable along an extension direction of the guide member on the outside of the guide member.
    Type: Application
    Filed: April 19, 2019
    Publication date: October 31, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Rimpei KINDAICHI, Yoshishige OKUNO, Tomohiro SHONAI
  • SiC INGOT AND METHOD OF MANUFACTURING SiC INGOT
    Publication number: 20190194822
    Abstract: A SiC ingot includes a core portion; and a surface layer that is formed on a plane of the core portion in a growing direction, and a coefficient of linear thermal expansion of the surface layer is smaller than a coefficient of linear thermal expansion of the core portion.
    Type: Application
    Filed: December 18, 2018
    Publication date: June 27, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Rimpei KINDAICHI, Yohei Fujikawa, Yoshishige Okuno