Patents by Inventor Rinus T. P. Lee

Rinus T. P. Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10121706
    Abstract: One aspect of the disclosure is directed to a method of forming a semiconductor structure. The method including: removing each fin in a set of fins from between insulator pillars to expose a portion of a substrate between each insulator pillar, the substrate having a first device region and a second device region; forming a first material over the exposed portions of the substrate between each insulator pillar, the first material including a two-dimensional material; forming a second material over the first material in the first device region, the second material including a first three-dimensional bonding material; and forming a third material over the exposed first material in the second device region, the third material including a second three-dimensional bonding material.
    Type: Grant
    Filed: November 28, 2016
    Date of Patent: November 6, 2018
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Rinus T. P. Lee, Bharat V. Krishnan, Hui Zang, Matthew W. Stoker
  • Publication number: 20180151449
    Abstract: One aspect of the disclosure is directed to a method of forming a semiconductor structure. The method including: removing each fin in a set of fins from between insulator pillars to expose a portion of a substrate between each insulator pillar, the substrate having a first device region and a second device region; forming a first material over the exposed portions of the substrate between each insulator pillar, the first material including a two-dimensional material; forming a second material over the first material in the first device region, the second material including a first three-dimensional bonding material; and forming a third material over the exposed first material in the second device region, the third material including a second three-dimensional bonding material.
    Type: Application
    Filed: November 28, 2016
    Publication date: May 31, 2018
    Inventors: Rinus T. P. Lee, Bharat V. Krishnan, Hui Zang, Matthew W. Stoker