Patents by Inventor Rita Slilaty

Rita Slilaty has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Shallow trench isolation structures having uniform and smooth topography
    Patent number: 7061068
    Abstract: Ions are implanted into the dielectric layer and/or barrier layer over a semiconductor substrate to change the polish rates of either or both layers during formation of a shallow trench isolation (STI) structure. The ion implantation can change or affect the polish rates of the material and the polish selectivity, and reduce or minimize unwanted topography resulting from chemical mechanical polishing (CMP). After CMP, the resulting STI structure has a more uniform and smooth topography.
    Type: Grant
    Filed: January 26, 2004
    Date of Patent: June 13, 2006
    Assignee: Intel Corporation
    Inventors: Leonard C. Pipes, Rita Slilaty
  • Implantating ions in shallow trench isolation structures
    Publication number: 20040155341
    Abstract: Ions are implanted into the dielectric layer and/or barrier layer over a semiconductor substrate to change the polish rates of either or both layers during formation of a shallow trench isolation (STI) structure. The ion implantation can change or affect the polish rates of the material and the polish selectivity, and reduce or minimize unwanted topography resulting from chemical mechanical polishing (CMP). After CMP, the resulting STI structure has a more uniform and smooth topography.
    Type: Application
    Filed: January 26, 2004
    Publication date: August 12, 2004
    Inventors: Leonard C. Pipes, Rita Slilaty
  • Implanting ions in shallow trench isolation structures
    Patent number: 6713385
    Abstract: Ions are implanted into the dielectric layer and/or barrier layer over a semiconductor substrate to change the polish rates of either or both layers during formation of a shallow trench isolation (STI) structure. The ion implantation can change or affect the polish rates of the material and the polish selectivity, and reduce or minimize unwanted topography resulting from chemical mechanical polishing (CMP). After CMP, the resulting STI structure has a more uniform and smooth topography.
    Type: Grant
    Filed: October 31, 2002
    Date of Patent: March 30, 2004
    Assignee: Intel Corporation
    Inventors: Leonard C. Pipes, Rita Slilaty