Patents by Inventor Rizwan Uddin Ahmad Khan
Rizwan Uddin Ahmad Khan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11060204Abstract: There is described a single crystal CVD diamond material comprising three orthogonal dimensions of at least 2 mm; one or more regions of low optical birefringence, indicative of low strain, such that in a sample of the single crystal CVD diamond material having a thickness in a range 0.5 mm to 1.0 mm and an area of greater than 1.3 mm×1.3 mm and measured using a pixel size of area in a range 1×1 ?m2 to 20×20 ?m2, a maximum value of ?n[average] does not exceed 1.5×10?4 for the one or more regions of low optical birefringence, where ?n[average] is an average value of a difference between refractive index for light polarised parallel to slow and fast axes averaged over the sample thickness; one or more regions of high optical birefringence, indicative of high strain, such that in said sample of the single crystal CVD diamond material and measured using said pixel size, ?n[average] is greater than 1.5×10?4 and less than 3×10?3; and is wherein every 1.3 mm×1.Type: GrantFiled: November 30, 2017Date of Patent: July 13, 2021Assignee: Element Six Technologies LimitedInventors: Daniel James Twitchen, Harpreet Kaur Dhillon, Rizwan Uddin Ahmad Khan
-
Publication number: 20210115590Abstract: There is described a single crystal CVD diamond material comprising three orthogonal dimensions of at least 2 mm; one or more regions of low optical birefringence, indicative of low strain, such that in a sample of the single crystal CVD diamond material having a thickness in a range 0.5 mm to 1.0 mm and an area of greater than 1.3 mm×1.3 mm and measured using a pixel size of area in a range 1×1 ?m2 to 20×20 ?m2, a maximum value of ?n[average] does not exceed 1.5×10?4 for the one or more regions of low optical birefringence, where ?n[average] is an average value of a difference between refractive index for light polarised parallel to slow and fast axes averaged over the sample thickness; one or more regions of high optical birefringence, indicative of high strain, such that in said sample of the single crystal CVD diamond material and measured using said pixel size, ?n[average] is greater than 1.5×10?4 and less than 3×10?3; and is wherein every 1.3 mm×1.Type: ApplicationFiled: November 30, 2017Publication date: April 22, 2021Applicant: ELEMENT SIX TECHNOLOGIES LIMITEDInventors: DANIEL JAMES TWITCHEN, HARPREET KAUR DHILLON, RIZWAN UDDIN AHMAD KHAN
-
Patent number: 10480097Abstract: The present disclosure relates to methods for synthesizing synthetic CVD diamond material and high quality synthetic CVD diamond materials.Type: GrantFiled: March 14, 2019Date of Patent: November 19, 2019Assignee: Element Six Technologies LimitedInventors: Daniel James Twitchen, Andrew Michael Bennett, Rizwan Uddin Ahmad Khan, Philip Maurice Martineau
-
Publication number: 20190211473Abstract: The present disclosure relates to methods for synthesizing synthetic CVD diamond material and high quality synthetic CVD diamond materials.Type: ApplicationFiled: March 14, 2019Publication date: July 11, 2019Applicant: ELEMENT SIX TECHNOLOGIES LIMITEDInventors: DANIEL JAMES TWITCHEN, ANDREW MICHAEL BENNETT, RIZWAN UDDIN AHMAD KHAN, PHILIP MAURICE MARTINEAU
-
Patent number: 10273598Abstract: The present disclosure relates to methods for synthesizing synthetic CVD diamond material and high quality synthetic CVD diamond materials.Type: GrantFiled: December 15, 2010Date of Patent: April 30, 2019Assignee: Element Six Technologies LimitedInventors: Daniel James Twitchen, Andrew Michael Bennett, Rizwan Uddin Ahmad Khan, Philip Maurice Martineau
-
Patent number: 9682864Abstract: A single crystal CVD synthetic diamond layer comprising a non-parallel dislocation array, wherein the non-parallel dislocation array comprises a plurality of dislocations forming an array of inter-crossing dislocations, as viewed in an X-ray topographic cross-sectional view or under luminescent conditions.Type: GrantFiled: December 16, 2011Date of Patent: June 20, 2017Assignee: Element Six Technologies LimitedInventors: Harpreet Kaur Dhillon, Nicholas Matthew Davies, Rizwan Uddin Ahmad Khan, Daniel James Twitchen, Philip Maurice Martineau
-
Patent number: 9260797Abstract: A single crystal CVD synthetic diamond material comprising: a total as-grown nitrogen concentration equal to or greater than 5 ppm, and a uniform distribution of defects, wherein said uniform distribution of defects is defined by one or more of the following characteristics: (i) the total nitrogen concentration, when mapped by secondary ion mass spectrometry (SIMS) over an area equal to or greater than 50×50 ?m using an analysis area of 10 ?m or less, possesses a point-to-point variation of less than 30% of an average total nitrogen concentration value, or when mapped by SIMS over an area equal to or greater than 200×200 ?m using an analysis area of 60 ?m or less, possesses a point-to-point variation of less than 30% of an average total nitrogen concentration value; (ii) an as-grown nitrogen-vacancy defect (NV) concentration equal to or greater than 50 ppb as measured using 77K UV-visible absorption measurements, wherein the nitrogen-vacancy defects are uniformly distributed through the synthetic single crystType: GrantFiled: December 12, 2012Date of Patent: February 16, 2016Assignee: Element Six LimitedInventors: Harpreet Kaur Dhillon, Daniel James Twitchen, Rizwan Uddin Ahmad Khan
-
Patent number: 8986646Abstract: A method of introducing NV centers in single crystal CVD diamond material is described. One step of the method comprises irradiating diamond material that contains single substitutional nitrogen to introduce isolated vacancies into the diamond material in a concentration of at least 0.05 ppm and at most 1 ppm. Another step of the method comprises annealing the irradiated diamond to form NV centers from at least some of the single substitutional nitrogen defects and the introduced isolated vacancies.Type: GrantFiled: June 25, 2010Date of Patent: March 24, 2015Assignee: Element Six Technologies LimitedInventors: Daniel James Twitchen, Sarah Louise Geoghegan, Neil Perkins, Rizwan Uddin Ahmad Khan
-
Publication number: 20140335339Abstract: A single crystal CVD synthetic diamond material comprising: a total as-grown nitrogen concentration equal to or greater than 5 ppm, and a uniform distribution of defects, wherein said uniform distribution of defects is defined by one or more of the following characteristics: (i) the total nitrogen concentration, when mapped by secondary ion mass spectrometry (SIMS) over an area equal to or greater than 50×50 ?m using an analysis area of 10 ?m or less, possesses a point-to-point variation of less than 30% of an average total nitrogen concentration value, or when mapped by SIMS over an area equal to or greater than 200×200 ?m using an analysis area of 60 ?m or less, possesses a point-to-point variation of less than 30% of an average total nitrogen concentration value; (ii) an as-grown nitrogen-vacancy defect (NV) concentration equal to or greater than 50 ppb as measured using 77K UV-visible absorption measurements, wherein the nitrogen-vacancy defects are uniformly distributed through the synthetic single crystType: ApplicationFiled: December 12, 2012Publication date: November 13, 2014Inventors: Harpreet Kaur Dhillon, Daniel James Twitchen, Rizwan Uddin Ahmad Khan
-
Publication number: 20140004319Abstract: A single crystal CVD synthetic diamond layer comprising a non-parallel dislocation array, wherein the non-parallel dislocation array comprises a plurality of dislocations forming an array of inter-crossing dislocations, as viewed in an X-ray topographic cross-sectional view or under luminescent conditions.Type: ApplicationFiled: December 16, 2011Publication date: January 2, 2014Applicant: Element Six LimitedInventors: Harpreet Kaur Dhillon, Nicholas Mattew Davies, Rizwan Uddin Ahmad Khan, Daniel James Twitchen, Philip Maurice Martineau
-
Publication number: 20110151226Abstract: The present disclosure relates to methods for synthesizing synthetic CVD diamond material and high quality synthetic CVD diamond materials.Type: ApplicationFiled: December 15, 2010Publication date: June 23, 2011Inventors: Daniel James Twitchen, Andrew Michael Bennett, Rizwan Uddin Ahmad Khan, Philip Maurice Martineau
-
Publication number: 20100329962Abstract: A method of introducing NV centres in single crystal CVD diamond material is described. One step of the method comprises irradiating diamond material that contains single substitutional nitrogen to introduce isolated vacancies into the diamond material in a concentration of at least 0.05 ppm and at most 1 ppm. Another step of the method comprises annealing the irradiated diamond to form NV centres from at least some of the single substitutional nitrogen defects and the introduced isolated vacancies.Type: ApplicationFiled: June 25, 2010Publication date: December 30, 2010Inventors: Daniel James Twitchen, Sarah Louise Geoghegan, Neil Perkins, Rizwan Uddin Ahmad Khan