Patents by Inventor Rob Mathijs Heeres
Rob Mathijs Heeres has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240080003Abstract: Example embodiments relate to digital RF amplifiers. One example digital RF amplifier includes a driver having a plurality of outputs and being configured to individually set a signal level at the outputs either to an inactive or active level in response to a digital input signal. The RF amplifier also includes a transistor configured to output an analog RF signal at a transistor output. The transistor includes a plurality of transistor cells, each including a control terminal, an output terminal, and a common terminal. The transistor also includes a plurality of transistor inputs, each transistor input being electrically connected to the control terminal of at least one transistor cell. The transistor inputs are mutually electrically isolated. Each transistor input is connected to a different output of the driver. The transistor output is electrically connected to the output terminals of the plurality of transistor cells. The transistor is a circular transistor.Type: ApplicationFiled: August 30, 2023Publication date: March 7, 2024Inventors: Johannes Adrianus Maria De Boet, Daniel Maassen, Rob Mathijs Heeres
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Patent number: 11482501Abstract: Example embodiments relate to amplifiers having improved stability.Type: GrantFiled: June 19, 2020Date of Patent: October 25, 2022Assignee: Ampleon Netherlands B.V.Inventors: Yi Zhu, Josephus Henricus Bartholomeus Van Der Zanden, Rob Mathijs Heeres
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Publication number: 20220246553Abstract: Example embodiments relate to amplifiers haying improved stability.Type: ApplicationFiled: June 19, 2020Publication date: August 4, 2022Inventors: Yi Zhu, Josephus Henricus Bartholomeus Van Der Zanden, Rob Mathijs Heeres
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Patent number: 10763227Abstract: The present disclosure relates to a packaged radiofrequency (RF) power amplifier. The present disclosure further relates to a semiconductor die that is used in such a power amplifier and to an electronic device or system that comprises the semiconductor die and/or power amplifier. According to the disclosure, the semiconductor die comprises a second drain bond assembly arranged spaced apart from the first drain bond assembly and electrically connected thereto, wherein the second drain bond assembly is arranged closer to the input side of the semiconductor die than the first drain bond assembly. The RF power amplifier comprises a first plurality of bondwires which extend between the first drain bond assembly and the output lead, and a second plurality of bondwires which extend from the second drain bond assembly to a first terminal of a grounded capacitor.Type: GrantFiled: December 12, 2018Date of Patent: September 1, 2020Assignee: Ampleon Netherlands B.V.Inventors: Rob Mathijs Heeres, Freerk van Rijs
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Publication number: 20190181106Abstract: The present disclosure relates to a packaged radiofrequency (RF) power amplifier. The present disclosure further relates to a semiconductor die that is used in such a power amplifier and to an electronic device or system that comprises the semiconductor die and/or power amplifier. According to the disclosure, the semiconductor die comprises a second drain bond assembly arranged spaced apart from the first drain bond assembly and electrically connected thereto, wherein the second drain bond assembly is arranged closer to the input side of the semiconductor die than the first drain bond assembly. The RF power amplifier comprises a first plurality of bondwires which extend between the first drain bond assembly and the output lead, and a second plurality of bondwires which extend from the second drain bond assembly to a first terminal of a grounded capacitor.Type: ApplicationFiled: December 12, 2018Publication date: June 13, 2019Inventors: Rob Mathijs Heeres, Freerk van Rijs
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Patent number: 9941227Abstract: A package is provided. The package comprises a die and an impedance matching network. The die has a first terminal and a second terminal. The impedance matching network is coupled to the second terminal and comprises a first inductor and a first capacitor. The first inductor comprises first bond wire connections coupled between the second terminal and a first bond pad on the die, and second bond wire connections coupled between the first bond pad and a second bond pad coupled to the first capacitor.Type: GrantFiled: May 26, 2016Date of Patent: April 10, 2018Assignee: Ampleon Netherlands B.V.Inventors: Yi Zhu, Josephus Van Der Zanden, Iouri Volokhine, Rob Mathijs Heeres
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Patent number: 9786640Abstract: A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure.Type: GrantFiled: June 30, 2016Date of Patent: October 10, 2017Assignee: Ampleon Netherlands B.V.Inventors: Petra Christina Anna Hammes, Josephus Henricus van der Zanden, Rob Mathijs Heeres, Albert Gerardus Wilhelmus Philipus van Zuijlen
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Publication number: 20160351513Abstract: A package is provided. The package comprises a die and an impedance matching network. The die has a first terminal and a second terminal. The impedance matching network is coupled to the second terminal and comprises a first inductor and a first capacitor. The first inductor comprises first bond wire connections coupled between the second terminal and a first bond pad on the die, and second bond wire connections coupled between the first bond pad and a second bond pad coupled to the first capacitor.Type: ApplicationFiled: May 26, 2016Publication date: December 1, 2016Inventors: Yi Zhu, Josephus Van Der Zanden, Iouri Volokhine, Rob Mathijs Heeres
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Publication number: 20160315073Abstract: A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure.Type: ApplicationFiled: June 30, 2016Publication date: October 27, 2016Applicant: Ampleon Netherlands B.V.Inventors: Petra Christina Anna Hammes, Josephus Henricus van der Zanden, Rob Mathijs Heeres, Albert Gerardus Wilhelmus Philipus van Zuijlen
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Patent number: 9413308Abstract: In RF power transistors, the current distribution along edges of the transistor die may be uneven leading to a loss in efficiency and in the output power obtained, resulting in degradation in performance. When multiple parallel dies are placed in a package, distribution effects along the vertical dimension of the dies are more pronounced. A RF power device (600) for amplifying RF signals is disclosed which modifies the impedance of a portion of the respective one of the input lead and the output lead and redistributes the current flow at an edge of the transistor die.Type: GrantFiled: June 27, 2014Date of Patent: August 9, 2016Assignee: Ampleon Netherlands B.V.Inventors: Josephus van der Zanden, Vittorio Cuoco, Rob Mathijs Heeres
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Patent number: 9406659Abstract: A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure.Type: GrantFiled: October 27, 2014Date of Patent: August 2, 2016Assignee: Ampleon Netherlands B.V.Inventors: Petra Christina Anna Hammes, Josephus Henricus Bartholomeus van der Zanden, Rob Mathijs Heeres, Albert Gerardus Wilhelmus Philipus van Zuijlen
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Publication number: 20150115343Abstract: A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure.Type: ApplicationFiled: October 27, 2014Publication date: April 30, 2015Inventors: Petra Christina Anna Hammes, Josephus Henricus Bartholomeus van der Zanden, Rob Mathijs Heeres, Albert Gerardus Wilhelmus Philipus van Zuijlen
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Patent number: 8981433Abstract: A compensation network for a radiofrequency transistor is disclosed. The compensation network comprises first and second bonding bars for coupling to a first terminal of the RF transistor and a compensation capacitor respectively; one or more bond wires coupling the first and second bonding bars together; and a compensation capacitor formed from a first set of conductive elements coupled to the second bonding bar, the first set of conductive elements interdigitating with a second set of conductive elements coupled to a second terminal of the RF transistor.Type: GrantFiled: November 23, 2011Date of Patent: March 17, 2015Assignee: NXP, B.V.Inventors: Lukas Frederik Tiemeijer, Vittorio Cuoco, Rob Mathijs Heeres, Jan Anne van Steenwijk, Marnix Bernard Willemsen, Josephus Henricus Bartholomeus van der Zanden
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Publication number: 20150028955Abstract: In RF power transistors, the current distribution along edges of the transistor die may be uneven leading to a loss in efficiency and in the output power obtained, resulting in degradation in performance. When multiple parallel dies are placed in a package, distribution effects along the vertical dimension of the dies are more pronounced. A RF power device (600) for amplifying RF signals is disclosed which modifies the impedance of a portion of the respective one of the input lead and the output lead and redistributes the current flow at an edge of the transistor die.Type: ApplicationFiled: June 27, 2014Publication date: January 29, 2015Inventors: Josephus van der Zanden, Vittorio Cuoco, Rob Mathijs Heeres
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Publication number: 20120132969Abstract: A compensation network for a radiofrequency transistor is disclosed. The compensation network comprises first and second bonding bars for coupling to a first terminal of the RF transistor and a compensation capacitor respectively; one or more bond wires coupling the first and second bonding bars together; and a compensation capacitor formed from a first set of conductive elements coupled to the second bonding bar, the first set of conductive elements interdigitating with a second set of conductive elements coupled to a second terminal of the RF transistor.Type: ApplicationFiled: November 23, 2011Publication date: May 31, 2012Applicant: NXP B.V.Inventors: Lukas Frederik Tiemeijer, Vittorio Cuoco, Rob Mathijs Heeres, Jan Anne van Steenwijk, Marnix Bernard Willemsen, Josephus Henricus Bartholomeus van der Zanden
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Publication number: 20080239597Abstract: A peak voltage protection circuit for protecting an associated High Voltage NPN transistor (T3) against breakdown, the protection circuit comprising a Low Voltage NPN element (T15) for sensing a sensor voltage related to a base-collector voltage of the associated High Voltage NPN transistor (T3). The circuit further comprises an activation circuit for limiting the base-collector voltage of the associated High Voltage NPN transistor (T3) upon triggering. The Low Voltage NPN element (15) is coupled to the activation circuit for triggering it upon the sensor voltage exceeding a breakdown voltage of the Low Voltage NPN transistor (T15).Type: ApplicationFiled: September 14, 2005Publication date: October 2, 2008Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Adrianus Van Bezooijen, Ronald Koster, Rob Mathijs Heeres, Dmitry Paviovich Prikhodko, Bart Balm
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Patent number: 7154339Abstract: An RF power amplifier according to the invention comprises a plurality of parallel output transistors (HBT,1,1 to HBT,1,N) connected to a power supply. A plurality of base resistors (Rb,1,1 to Rb,1,N) for the output transistors (HBT,1,1 to HBT,1,N) and a plurality of input capacitors (Cb,1 to Cb,N), each coupled in parallel to receive an RF signal input and connected via at least one additional passive component to the inputs of each corresponding output transistor (HBT,1,1 to HBT,1,N), are provided An output for an RF output signal is obtained from the parallel connection of the output transistors (HBT,1,1 to HBT,1,N). The transistors (HBT,1,1 to HBT,1,N) are heterojunction bipolar transistors.Type: GrantFiled: May 19, 2003Date of Patent: December 26, 2006Assignee: NXP B.V.Inventors: Niels Kramer, Ronald Koster, Rob Mathijs Heeres, John Joseph Hug