Abstract: The invention relates to an integrated circuit having a test circuit and a test terminal, it being possible for the test circuit to be activated by means of a test signal which can be applied to the test terminal in order to start a test function, a switching device being provided in order, after the activation of the test circuit, to connect the test terminal to an internal voltage line, in order to supply a current requirement needed on account of the test function that is performed.

Abstract: A circuit configuration for driving a programmable link has a volatile memory cell, which is coupled to the fuse for the permanent storage of data stored in the volatile memory, and also a shift register, which enables data to be read out from the volatile memory cell and data to be written to the memory cell. In this case, a plurality of shift registers may be interconnected to form a shift register chain for the purpose of driving a plurality of fuses. The shift register chain thus enables fast writing and reading to/from the volatile memory with a low outlay on circuitry.

Abstract: A data read access and a data write access is shared between two memory banks. A first memory bank of which is operated with a clock that is shifted by half a clock pulse with respect to the operating clock of the other, second memory bank. Partial data streams are combined at the output of the two memory banks to form a data stream with double the frequency.

Abstract: The semiconductor component is provided for connection to a test system. An external clock signal with a modulated duty ratio can be input to the semiconductor component at a connection provided for that purpose on the semiconductor component. The latter has a clock recovery circuit, which obtains a periodic clock signal from the modulated clock signal, and a shift register, to which the modulated clock signal can be fed in a manner clocked by the periodic clock signal and which provides a data signal. The present invention makes it possible, in particular in mass memory chips, to feed in clock signals and also program, address or data signals for the realization of BIST via just one connection contact.

Abstract: A comparison method compares the address of a memory cell with a known address of a faulty memory cell in a semiconductor memory module. The module is subdivided into banks and has an address structure in which each address is associated with a bank that is organized in rows and columns and is defined by a row address, a column address and a bank address. Not only the row address is determined, but also the column address and the bank address when a memory access occurs. A bank is activated with a bank selection signal, and the access to a valid address of a faulty memory cell is indicated by an enable register.

Abstract: A circuit configuration for driving a programmable link, for example a fuse, is specified, having a drive circuit for driving the fuse in a manner dependent on a signal present at the data input, and also a volatile memory, whose output is preferably directly connected to the data input of the drive circuit. A circuit configuration for particularly fast and simple programming of fuses, in particular electrically programmable fuses, is thereby specified.

Abstract: An integrated circuit includes a self-test device which is provided for executing a self-test of the integrated circuit and which has a control output. A program memory is connected to the self-test device for storing at least one test program supplied from outside the integrated circuit. The test program is run by the self-test device during execution of a self-test. The self-test device controls loading of a respective test program to be run into the program memory from outside the integrated circuit through the control output thereof.

Abstract: A data read access and a data write access is shared between two memory banks. A first memory bank of which is operated with a clock that is shifted by half a clock pulse with respect to the operating clock of the other, second memory bank. Partial data streams are combined at the output of the two memory banks to form a data stream with double the frequency.

Abstract: The invention relates to a semiconductor module having a plurality of signal paths for carrying external signals that each contain a setup and hold circuit on the basis of a latch circuit with a full latch and a logic circuit. The latch circuit contains at a beginning of the signal path upstream of the logic circuit a hold latch. The hold latch responds to the leading edge of a fast clock signal derived from the clock signal of the external signal, for the early latching of the external signal and for the decoupling of the hold time from the setup time. The full latch is disposed downstream of the logic circuit for the final latching of the external signal or of a signal derived from the latter.

Abstract: In the configuration, the module can “learn” one or more time intervals from the external tester and then repeat them internally or compare them to its own internally measured time intervals, for instance, for the purpose of evaluating whether the module in question has crossed a time specification value or remains below the value. The module can also measure and store one or more internal time intervals and transmit them to the external tester in digital or analog form.

Abstract: A circuit configuration for driving a programmable link, for example a fuse, is specified, having a drive circuit for driving the fuse in a manner dependent on a signal present at the data input, and also a volatile memory, whose output is preferably directly connected to the data input of the drive circuit. A circuit configuration for particularly fast and simple programming of fuses, in particular electrically programmable fuses, is thereby specified.

Abstract: An apparatus and methods are provided for the separation of a subset from a complex mixture of particles, e.g. cells, virus, organelles, etc., wherein the particles have a binding moiety present on an accessible, usually external, surface. The apparatus comprises a capillary tube or array of capillary tubes having bound to the luminal surface a capture system comprising a cleavable linkage and a selective ligand. The capture system provides selectivity both in binding particles, through the ligand, and in the release of particles, through the cleavable linker. Each capillary may be divided linearly into zones, where in each zone the composition of the capture system varies, particularly in the ligand specificity. In one embodiment of the invention, each zone comprises a ligand specific for a different positive or negative selection marker on the desired particles.

Abstract: A circuit configuration for driving a programmable link has a drive circuit for the selection and blowing of the fuse, and also a shift register, by which an activation signal can be fed to the drive circuit. In order to provide the data to be blown, in a preferred embodiment, a volatile memory cell may be provided. The present circuit configuration enables the blowing of fuses and thus repair of defective memory cells in mass memories even after encapsulation of a chip having the mass memory. Moreover, the shift register described effectively prevents impermissibly high currents from being able to occur as a result of simultaneous blowing of too many fuses.

Abstract: A circuit configuration for driving a programmable link has a volatile memory cell, which is coupled to the fuse for the permanent storage of data stored in the volatile memory, and also a shift register, which enables data to be read out from the volatile memory cell and data to be written to the memory cell. In this case, a plurality of shift registers may be interconnected to form a shift register chain for the purpose of driving a plurality of fuses. The shift register chain thus enables fast writing and reading to/from the volatile memory with a low outlay on circuitry.

Abstract: A filter system including a housing with an intake and an outlet, a pleated carbon filter disposed between the intake and the outlet for filtering out vapors entering the intake, and a hydrophobic solution dispersed about the pleated carbon filter to inhibit adsorption of water thereby increasing the adsorption capacity of the pleated carbon filter especially in high relative humidity environments. The hydrophobic solution is selected so that it does not decrease the adsorption capacity of the carbon filter. Also disclosed is a method of making such a filter.

Abstract: An integrated circuit has a timing circuit with a power source and a capacitor. The timing circuit outputs an output signal whose time can be adjusted and which has a switching time delayed with respect to a reference time. A control signal output by a drive circuit is connected to the timing circuit for adjustment of the output signal with regard to the switching time. The output signal from the timing circuit is connected to the drive circuit for assessment of the output signal with regard to the switching time. The operation of the timing circuit can thus be adjusted independently of process fluctuations during the production of the integrated circuit.

Abstract: Ultrasonic solvent cleaning processes can effectively decontaminate sensitive equipment.

Abstract: A memory configuration includes a central connection area. The central connection area is surrounded annularly by cell arrays having memory cells. The memory configuration has compact external dimensions and is suitable, in particular, for a side ratio of 2:1. All the peripheral circuits are preferably disposed in the central connection area. As a result, the propagation time differences between the peripheral circuits and the various cell arrays are relatively small.

Abstract: Electrical fuses/antifuses in a semiconductor memory configuration, such as in particular a DRAM, are read, instead of with the previously conventional internal voltage, with the voltage that defines the high potential of the bit lines of a memory cell array in the semiconductor memory. The high potential of the bit lines is defined by a voltage that is reduced relative to the internal voltage of the semiconductor memory.

Abstract: An integrated semiconductor circuit has a transistor of the NMOS type that is disposed in a well of a p conductivity type in a substrate of the p conductivity type. The well is electrically insulated from the substrate. The semiconductor circuit furthermore contains a control circuit with a variable output signal. The well terminal of the transistor is connected to the output signal of the control circuit. The transistor is protected against permanent damage by virtue of its well potential being raised in a corresponding operating mode of the semiconductor circuit in which an increased operating voltage is applied to the transistor.