Abstract: An apparatus for thermally processing a microelectronic workpiece is set forth. The apparatus comprises a first assembly and a second assembly, disposed opposite one another, with an actuator disposed to provide relative movement between the first assembly and second assembly. More particularly, the actuator provides relative movement between at least a loading position in which the first assembly is in a state for loading or unloading of the microelectronic workpiece, and a thermal processing position in which the first assembly and second assembly are proximate one another and form a thermal processing chamber. A thermal transfer unit is disposed in the second assembly and has a workpiece support surface that is heated and cooled in a controlled manner.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: An apparatus and method for processing a microelectronic workpiece at an elevated temperature. In one embodiment, the apparatus includes a workpiece support positioned to engage and support the microelectronic workpiece during operation. The apparatus can further include a heat source having a solid engaging surface positioned to engage a surface of the microelectronic workpiece with at least one of the heat source and the workpiece support being movable relative to the other between a first position with the microelectronic workpiece contacting the engaging surface of the heat source and a second position with the microelectronic workpiece spaced apart from the engaging surface. The heat source is sized to transfer heat to the microelectronic workpiece at a rate sufficient to thermally process a selected material of the microelectronic workpiece when the microelectronic workpiece is engaged with the heat source.

Abstract: A rotor that may be used by itself or in a processing machine for processing semiconductor wafers includes two pairs of combs. A lock down mechanism has a lock bar, temporarily engaged and moved by a loading/unloading robot, drives a retainer against the edges of the wafers, to better hold them in place during processing. Contamination via generation of particles is reduced. Combs on the rotor have a resilient strip. The lower edges of the wafers compress slightly into or deflect the resilient strip, when urged into place by the lock down mechanism.

Abstract: In an electroplating reactor for plating a spinning wafer, a diffusion plate is supported above an anode located within a cup filled with process fluid within the reactor. The diffusion plate includes a plurality of openings which are arranged in a spiral pattern. The openings allow for an improved plating thickness distribution on the wafer surface. The openings can be elongated slots curved along the direction of the spiral path.

Abstract: In a machine for processing semiconductor wafers, a rotor includes two pairs of combs. A lock down mechanism has a lock bar, temporarily engaged and moved by a loading/unloading robot, drives a retainer against the edges of the wafers, to better hold them in place during processing. Contamination via generation of particles is reduced. Combs on the rotor have a resilient strip. The lower edges of the wafers compress slightly into or deflect the resilient strip, when urged into place by the lock down mechanism.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent confirm copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract: In an electroplating reactor for plating a spinning wafer, a diffusion plate is supported above an anode located within a cup filled with process fluid within the reactor. The diffusion plate includes a plurality of openings which are arranged in a spiral pattern. The openings allow for an improved plating thickness distribution on the wafer surface. The openings can be elongated slots curved along the direction of the spiral path.

Abstract: A vertically oriented thermal processor supports semiconductor wafers within a vertical process chamber within a process tube about which a furnace heater is supported. A base plate support assembly mates with a processing vessel such that the interior surface in proximate fluid adjoining relation with the processing chamber is formed from substantially-inert materials. Additionally, the base plate support assembly includes fluid cooling features that protect seals formed by devices passing through the base plate assembly into the processing chamber for delivery of processing gases and monitoring of thermal conditions therein. Additionally, cooling features are provided in a base plate in order to prevent components from becoming heat sinks or heat sources in relation to the processing chamber.

Abstract: A thermal processor for treating a plurality of semiconductor articles introduced into the processor and pods includes a work-in-process stocker and furnace combination. The stocker includes a loading port, shelves for storing pods and a loadport. The loadport includes a pod opener and is positioned at a port through to the furnace housing. The pod opener may be an indexer for an SMIF pod or a FOUP loadport for handling a 300 mm. wafer pod. A manipulator within the stocker operates to receive and output pods from the processor, present pods to the loadport for loading and unloading and warehousing pods between such operations. In one embodiment, the manipulator operates in an X-axis, Y-axis horizontal plane as well as in a Z-axis direction and rotation about the Z-axis. In the other, the Y-axis degree of freedom is eliminated.

Abstract: The invention is directed to an electrical connector having an outer metal shell with an inner dielectric insert and a central contact pin received within the dielectric insert. The outer metal shell has a mating end with forward passageway. The outer metal shell has a dielectric insert receiving passageway which is narrower than the forward passageway. A shoulder is disposed along the inner wall between the forward passageway and the dielectric insert receiving passageway. The shoulder being angled towards the forward passageway. The shoulder is deformable over the dielectric insert to secure the dielectric insert within the outer metal shell.

Abstract: A vertically oriented thermal processor for processing batches of semiconductor wafers held within a processing chamber. The processing chamber is contained within a processing vessel. A furnace liner surrounds the processing vessel in spaced relationship. A first flow of cooling fluid is supplied upwardly between the processing vessel and furnace liner. The incoming first flow also serves to cool the base plate assembly which is constructed to shield the processing chamber from off-gassing. A second flow path of cooling fluid is supplied downwardly between the furnace liner and an inner wall of the furnace heater in countercurrent relationship to the first flow. An outflow baffle and outflow cooler are also advantageously included to isolate the processing chamber and cool the exhausting gases. A preferred power supply system is also described.

Abstract: A vertically oriented thermal processor for processing batches of semiconductor wafers held within a processing chamber. The processing chamber is contained within a processing vessel. Processing gases are discharged through a processing chamber outflow. An outflow cooler is included to cool gases exhausting from the processing chamber outflow. The outflow cooler includes a fluid heat exchanger and a flow diverter which directs the exhausting gases against cooled walls of the outflow cooler. The cooler also preferably has a liner which lines a casing to which the heat exchanger is connected.

Abstract: A vertically oriented thermal processor for processing batches of semiconductor wafers held within a processing chamber. The processing chamber is contained within a processing vessel. A furnace liner surrounds the processing vessel in spaced relationship. A flow path for cooling fluid is supplied between the furnace liner and an inner wall of the furnace heater. The flow occurs through end and base segments forming part of the furnace heating enclosure. The end and base segments have interior ports which communicate with a manifold chamber. The manifold chamber is advantageously divided into inner and outer chambers by shields which reflect radiant heat. The inner and outer manifold chambers are connected by manifold connecting passages formed between the shields.

Abstract: A vertically oriented thermal processor supports semiconductor wafers within a vertical process chamber within a process tube about which a furnace heater is supported. A base plate support assembly mates with a processing vessel such that the interior surface in proximate fluid adjoining relation with the processing chamber is formed from substantially-inert materials. Additionally, the base plate support assembly includes fluid cooling features that protect seals formed by devices passing through the base plate assembly into the processing chamber for delivery of processing gases and monitoring of thermal conditions therein. Additionally, cooling features are provided in a base plate in order to prevent components from becoming heat sinks or heat sources in relation to the processing chamber.

Abstract: A novel system for introducing a combustible liquid fuel into a gasoline combustion engine to obtain substantially perfect combustion and thereby prevent pollution, which system comprises heating means for elevating the temperature of the liquid gasoline fuel above its critical temperature, thereby converting it to its gaseous state; pressure means for providing a positive pressure as the liquid fuel is transported to the heating means; and means for discharging and rapidly expanding the gaseous fuel into the mixing chamber of the engine where it is admixed with air to provide a combustible mixture for burning and operation of the engine, the pressure means providing a pressure sufficient to maintain the fuel in its gaseous state immediately after it is discharged from the heating means into the mixing chamber.

Abstract: A novel article retaining web for use with beach umbrellas is disclosed. The web is designed for use with an umbrella having a central supporting pole, a plurality of spokes pivotally attached thereto and a plurality of struts extending from a position along the pole generally upwardly to engage the spokes to brace the same when the umbrella is in the open position. The web is characterized by a substantially circular flexible net having a central aperture defined therein, a substantially inelastic reinforcing strip disposed around the perimeter of the net, and a plurality of attachments periodically disposed along the reinforcing strip, one for each spoke of the umbrella for suspending the web from the umbrellas spokes. The sizing and spacing of the above-mentioned components is such that article access apertures are created between portions of the umbrella located between the spokes and the portions of the webbing suspended from those spokes.