Abstract: Light source (1) for generating visible light (200), comprising at least one diode (10) on a semiconductor basis emitting ultraviolet light (100) and at least one luminophor (20) into which the emitted ultraviolet light (100) beams and which generates the visible light from the emitted ultraviolet light (100). Application: Generation of white light offering especially high color fidelity.

Abstract: The high-resolution image display device emits multicolored light from a monolithically integrated array. The monolithically integrated array has a transparent or at least translucent substrate. One side of the substrate carries semiconductor light emitting diodes or semiconductor laser diode devices emitting in the UV wavelength range. Many luminescence converting elements with luminescent substances of a predetermined color are applied to the substrate. The elements are optically separated from one another and associated with the semiconductor light emitting diode or semiconductor laser diode device. The elements receive the light emitted in the UV wavelength range by the semiconductor light emitting diode or semiconductor laser diode device, convert it into visible light, and emit the light in the visible spectrum.

Abstract: A method for manufacturing III-V semiconductor layers containing nitrogen whereby during the growth of the layers, the setting of the material sources for Al, In and Ga remains fixed. During the transition to the growth of a layer with another mixed-crystal composition, the nitrogen flow is altered. A greater nitrogen flow leads to an increased installation of the more weakly bound group III elements into the growing material.