Abstract: According to one exemplary embodiment, a method for forming a field-effect transistor on a substrate comprises a step of forming a buffer layer on the substrate, where the buffer layer comprises ALD silicon dioxide. The buffer layer can be formed by utilizing a silicon tetrachloride precursor in an atomic layer deposition process, for example. The buffer layer comprises substantially no pin-hole defects and may have a thickness, for example, that is less than approximately 5.0 Angstroms. The method further comprises forming a high-k dielectric layer over the buffer layer. The high-k dielectric layer may be, for example, hafnium oxide, zirconium oxide, or aluminum oxide. According to this exemplary embodiment, the method further comprises forming a gate electrode layer over the high-k dielectric layer. The gate electrode layer may be polycrystalline silicon, for example.

Abstract: According to one embodiment, a memory cell structure comprises a semiconductor substrate, a first silicon oxide layer situated over the semiconductor substrate, a charge storing layer situated over the first silicon oxide layer, a second silicon oxide layer situated over the charge storing layer, and a gate layer situated over the second silicon oxide layer. In the exemplary embodiment, the charge storing layer comprises silicon nitride having reduced hydrogen content, e.g., in the range of about 0 to 0.5 atomic percent. As a result, the reduced hydrogen content reduces the charge loss in the charge storing layer. The reduced charge loss in the charge storing layer has the benefit of reducing threshold voltage shifts, programming data loss, and programming capability loss in the memory device, thereby improving memory device performance.

Abstract: A method and system for detecting a planarization endpoint of a semiconductor wafer planarization operation, which includes monitoring a motor current for at least one of a platen motor, a carousel motor and a head motor, performing a Fourier transform of the monitored current to identify periodic oscillations in the current, to ensure that undesirable oscillations in the monitored motor current are minimized, to provide better reliability and higher precision of end-point detection triggering.