Patents by Inventor Robert B. Goodwin

Robert B. Goodwin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11171146
    Abstract: Some embodiments include an integrated assembly having bottom electrodes coupled with electrical nodes. Each of the bottom electrodes has a first leg electrically coupled with an associated one of the electrical nodes, and has a second leg joining to the first leg. First gaps are between some of the bottom electrodes, and second gaps are between others of the bottom electrodes. The first gaps alternate with the second gaps. Insulative material and conductive-plate-material are within the first gaps. Scaffold structures are within the second gaps and not within the first gaps. Capacitors include the bottom electrodes, regions of the insulative material and regions of the conductive-plate-material. The capacitors may be ferroelectric capacitors or non-ferroelectric capacitors. Some embodiments include methods of forming integrated assemblies.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: November 9, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Robert B. Goodwin, Sanh D. Tang
  • Publication number: 20210183873
    Abstract: Some embodiments include an integrated assembly having bottom electrodes coupled with electrical nodes. Each of the bottom electrodes has a first leg electrically coupled with an associated one of the electrical nodes, and has a second leg joining to the first leg. First gaps are between some of the bottom electrodes, and second gaps are between others of the bottom electrodes. The first gaps alternate with the second gaps. Insulative material and conductive-plate-material are within the first gaps. Scaffold structures are within the second gaps and not within the first gaps. Capacitors include the bottom electrodes, regions of the insulative material and regions of the conductive-plate-material. The capacitors may be ferroelectric capacitors or non-ferroelectric capacitors. Some embodiments include methods of forming integrated assemblies.
    Type: Application
    Filed: December 12, 2019
    Publication date: June 17, 2021
    Applicant: Micron Technology, Inc.
    Inventors: Robert B. Goodwin, Sanh D. Tang
  • Patent number: 5490114
    Abstract: A high performance latch for read and write operations in RAM having a Complimentary Interlock circuit that eliminates the need for external timing to the RAM which might limit its high performance operation. For both read and write operations, the complementary interlock circuit extends a latching signal until valid data appears on the read or write data lines, thus preventing a valid data miss.
    Type: Grant
    Filed: December 22, 1994
    Date of Patent: February 6, 1996
    Assignee: International Business Machines Corporation
    Inventors: Edward Butler, Robert B. Goodwin, Hemen R. Shah, Robert Tamlyn