Abstract: An apparatus (10, 30, 40, 50) is provided that relates to nanotubes as radiation elements for antennas and phased arrays, and more particularly to a macro-sized RF antenna for mobile devices. The antenna comprises a plurality of nanostructures (16), e.g., carbon nanotubes, forming an antenna structure on a substrate (12), and a radio frequency signal apparatus formed within the substrate (12) and coupled to the plurality of nanostructures (16). The radiation element length of a nested multiwall nanotube (161) of an exemplary embodiment may be tuned to a desirable frequency by an electromagnetic force (163).

Abstract: A micro-electro-mechanical system varactor. The varactor includes a substrate, a lower bias conductor partially overlaying the substrate, a first signal conductor partially overlaying the substrate, a dielectric layer at least partially overlaying the first signal conductor, a support structure coupled to the substrate, and a flexible structure coupled to the support structure. The flexible structure is suspended over the substrate, includes an upper bias conductor overlaying at least part of the lower bias conductor and a top conductor overlaying at least part of the first signal conductor, configured to deflect in response to a bias voltage applied between the upper bias conductor and the lower bias conductor, and configured for separation between the top conductor and the dielectric layer by a varying separation distance dependent upon the bias voltage.

Abstract: A micro-electro-mechanical system varactor. The varactor includes a substrate, a lower bias conductor partially overlaying the substrate, a first signal conductor partially overlaying the substrate, a dielectric layer at least partially overlaying the first signal conductor, a support structure coupled to the substrate, and a flexible structure coupled to the support structure. The flexible structure is suspended over the substrate, includes an upper bias conductor overlaying at least part of the lower bias conductor and a top conductor overlaying at least part of the first signal conductor, configured to deflect in response to a bias voltage applied between the upper bias conductor and the lower bias conductor, and configured for separation between the top conductor and the dielectric layer by a varying separation distance dependent upon the bias voltage.

Abstract: An embedded multilayer printed circuit includes a first ground plane (105, 1205, 1405) of a multilayer printed circuit board and an embedded layer. The embedded layer includes a co-planar capacitor (110, 1210, 1410), a distributed inductor (125, 1215, 1415), and a capacitive plate (135, 1220, 1420) circuit. The capacitive plate is a plate of a vertical capacitor (270, 1305, 1505). The embedded layer further includes a node (111, 1225, 1425) of the embedded multilayer printed circuit that is formed by a connection of a first terminal of the co-planar capacitor and a first terminal of the first distributed inductor, and in some embodiments, the first capacitive plate is also connected to the node. A second terminal of one of the co-planar capacitor and the distributed inductor is connected to the first ground plane.

Abstract: One of a plurality of capacitors embedded in a printed circuit structure includes a first electrode (415) overlaying a first substrate layer (505) of the printed circuit structure, a crystallized dielectric oxide core (405) overlaying the first electrode, a second electrode (615) overlying the crystallized dielectric oxide core, and a high temperature anti-oxidant layer (220) disposed between and contacting the crystallized dielectric oxide core and at least one of the first and second electrodes. The crystallized dielectric oxide core has a thickness that is less than 1 micron and has a capacitance density greater than 1000 pF/mm2. The material and thickness are the same for each of the plurality of capacitors. The crystallized dielectric oxide core may be isolated from crystallized dielectric oxide cores of all other capacitors of the plurality of capacitors.

Abstract: A meso-scale MEMS device having a cantilevered beam is formed using standard printed wiring board and high density interconnect technologies and practices. The beam includes at least some polymer material to constitute its length, and in some embodiments also comprises a conductive material as a load-bearing component thereof. In varying embodiments, the beam is attached at a location proximal to an end thereof, or distal to an end thereof.

Abstract: A meso-scale MEMS device having a cantilevered beam is formed using standard printed wiring board and high density interconnect technologies and practices. The beam includes at least some polymer material to constitute its length, and in some embodiments also comprises a conductive material as a load-bearing component thereof. In varying embodiments, the beam is attached at a location proximal to an end thereof, or distal to an end thereof.

Abstract: Optical waveguide structures including optical filters can be formed using a semiconductor structure having a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and/or other types of material such as metals and non-metals.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract: A measurement device (103) and method determines various metrics between a vehicle (101) and a ground surface (105) using a transmitter-antenna (109) for emitting energy including a portion directed down toward the ground surface. A receiving antenna (115), has a portion oriented facing toward the transmitter-antenna for receiving a portion of the emitting energy along a direct path (117), and a portion oriented facing downwardly toward the ground surface for receiving a portion of the emitting energy reflected from the ground surface along a reflected path (113). A decoder provides separate indications of forward (121) and sideward (123) velocity relative to motion of the vehicle along the ground surface.