Abstract: A slider of the type for use with a rotatable magnetic disk is disclosed. The slider has two ends and a bottom surface which includes an air bearing surface. An adhesive layer and continuous coating of carbon is located on the air bearing surface. A method of sputter depositing this continuous layer of carbon upon the air bearing surface of the slider is also provided. The continuous layer of carbon is crown-shaped and deposited using the sputtering technique. The carbon is directed from a source at the air bearing surface of a slider. A mask is placed between the source and slider so that the carbon is deposited in a crown shape. When the slider is viewed from front to rear the maximum depth of the coating is less than about 6 to 10 nm, while at the ends of the slider the coating depth is near 0 nm. The resistivity of the protective carbon layer is controlled for the additional benefit of protection from damages by electrostatic discharge.

Abstract: A slider of the type for use with a rotatable magnetic disk is disclosed. The slider has two ends and a bottom surface which includes an air bearing surface. An adhesive layer and continuous coating of carbon is located on the air bearing surface. A method of sputter depositing this continuous layer of carbon upon the air bearing surface of the slider is also provided. The continuous layer of carbon is crown-shaped and deposited using the sputtering technique. The carbon is directed from a source at the air bearing surface of a slider. A mask is placed between the source and slider so that the carbon is deposited in a crown shape. When the slider is viewed from front to rear the maximum depth of the coating is less than about 6 to 10 nm, while at the ends of the slider the coating depth is near 0 nm. The resistivity of the protective carbon layer is controlled for the additional benefit of protection from damages by electrostatic discharge.

Abstract: A slider of the type for use with a rotatable magnetic disk is disclosed. The slider has two ends and a bottom surface which includes an air bearing surface. An adhesive layer and continuous coating of carbon is located on the air bearing surface. A method of sputter depositing this continuous layer of carbon upon the air bearing surface of the slider is also provided. The continuous layer of carbon is crown-shaped and deposited using the sputtering technique. The carbon is directed from a source at the air bearing surface of a slider. A mask is placed between the source and slider so that the carbon is deposited in a crown shape. When the slider is viewed from front to rear the maximum depth of the coating is less than about 6 to 10 nm, while at the ends of the slider the coating depth is near 0 nm.

Abstract: A method for fabricating a copper indium diselenide semiconductor film comprising use of DC magnetron sputtering apparatus to sequentially deposit a first film of copper on a substrate and a second film of indium on the copper film. Thereafter the substrate with copper and indium films is heated in the presence of gas containing selenium at a temperature selected to cause interdiffusion of the elements and formation of a high quality copper indium diselenide film. In a preferred form, an insulating substrate is used and an electrical contact is first deposited thereon in the same DC magnetron sputtering apparatus prior to deposition of the copper and indium films.

Abstract: A photoconductive device of decreased resistivity is provided by using at least one zinc oxide transparent conductive layer in conjunction with a thin film amorphous silicon photoconductor. The zinc oxide layer can be used as the front contact, the back contact or both the front and back contacts of the photoconductive device.

Abstract: At least two constituent elements of a semiconductor compound are deposited in varying proportions by magnetron sputtering to produce a film having a preselected concentration gradient of the constituent elements. The film can be heat treated during or after deposition to diffuse the constituent elements within the film and enhance growth of a desired film structure. The sputtering step may be performed using a planar magnetron having a plurality of continuous magnetically enhanced sputtering cathodes extending about a common axis. Each of the cathodes includes a source structure containing at least one of the constituent elements, and provision for applying electrical power to the source structure to sputter the constituent element at a controlled rate. If one of the elements is difficult to control in the deposition process, it can be sputtered from a cathode made up of a stable alloy of the element and another constituent of the film. For example, when the semiconductor compound is CuInSe.sub.

Abstract: A large scale vacuum deposition facility is disclosed in which substrates, in the form of architectural glass lights on supporting racks, are moved through an evacuated working chamber system where the substrates are coated by cathodic sputtering. The substrate racks are moved by a conveyor system through the working chamber system via an access chamber system, enabling substantially continuous production of coated substrates without requiring the working chamber system be opened to atmosphere.Operation of the working chamber system, the access chamber system, the conveyor system and associated components is monitored and governed from a process control console.

Abstract: Apparatus for depositing layers of materials onto substrates by magnetically enhanced cathodic sputtering; typically comprising an enclosure having atmospheric sealing means between the atmosphere inside and the atmosphere outside the enclosure, vacuum pump means connected to the enclosure to reduce the pressure inside relative to the atmospheric pressure outside the enclosure, a cathode within the enclosure comprising a substantially planar frame formed about a parallel interior plane, a plurality of magnets supported within the frame and positioned with the neutral axis of each magnet substantially in the interior plane, and at least one target plate supported on the frame on opposite sides of the interior plane, insulation means between the frame and the enclosure, means for connecting an electrical potential difference between the frame and the enclosure, and means in and supported by the enclosure for supporting and conveying the substrates on opposite sides of, and parallel to, the target plates from a