Abstract: A fitting assembly for connection to a flexible duct includes a ferrule configured for insertion into an open end of the flexible duct a fitting removably connected to the ferrule. The ferrule includes a sidewall defining a minor diameter and a major diameter spaced apart from the minor diameter, and a ferrule thread extending radially outward from the sidewall. One of the fitting and the ferrule defines a recess. Another of the fitting and the ferrule comprises a tab configured to extend into the recess. One of the recess and the tab comprises an edge. Another of the recess and the tab comprises a ramped surface extending in a circumferential direction of the ferrule, such that rotation of the ferrule relative to the fitting causes the ramped surface to engage the edge, thereby radially deflecting the tab and disengaging the tab from the recess.

Abstract: A synthetic antiferromagnetic structure for a spintronic device is disclosed and has an FL2/Co or Co alloy/antiferromagnetic coupling/Co or Co alloy/CoFeB configuration where FL2 is a ferromagnetic free layer with intrinsic PMA. Antiferromagnetic coupling is improved by inserting a Co or Co alloy dusting layer on top and bottom surfaces of the antiferromagnetic coupling layer. The FL2 layer may be a L10 ordered alloy, a rare earth-transition metal alloy, or an (A1/A2)n laminate where A1 is one of Co, CoFe, or an alloy thereof, and A2 is one of Pt, Pd, Rh, Ru, Ir, Mg, Mo, Os, Si, V, Ni, NiCo, and NiFe, or A1 is Fe and A2 is V. A method is also provided for forming the synthetic antiferromagnetic structure.

Abstract: Vacuum toilet flush valves. The disclosure uses a precise positioning of a magnet with respect to a flush valve plate in order to identify absolute alignment accurately.

Abstract: An indoor environmental control and air distribution system for a building includes: an air handling unit; a manifold connected to the air handling unit having a chamber formed by a plurality of walls and a plurality of orifices formed through at least one of the walls; air distribution conduits each independently having a first end connected to the orifices of the manifold and a second end extending out from the manifold into different zones throughout the building; and an airflow modulating device having one or more airflow regulating dampers independently configured to move into at least two positions in which each position provides a different percentage of total air volume to each air distribution conduit. A method of using the indoor environmental control and air distribution system is also included.

Abstract: A fitting assembly for connection to a flexible duct includes a ferrule configured for insertion into an open end of the flexible duct a fitting removably connected to the ferrule. The ferrule includes a sidewall defining a minor diameter and a major diameter spaced apart from the minor diameter, and a ferrule thread extending radially outward from the sidewall. One of the fitting and the ferrule defines a recess. Another of the fitting and the ferrule comprises a tab configured to extend into the recess. One of the recess and the tab comprises an edge. Another of the recess and the tab comprises a ramped surface extending in a circumferential direction of the ferrule, such that rotation of the ferrule relative to the fitting causes the ramped surface to engage the edge, thereby radially deflecting the tab and disengaging the tab from the recess.

Abstract: The present disclosure relates to connecting devices and systems for constructing a structure. Specifically, the present disclosure relates to a connector device and system useful for joining structural elements together for constructing a roof on a building. The present disclosure provides embodiments of connectors which are used to secure roof purlins to rafters and/or trusses to enhance the structural integrity of the roof.

Abstract: A bidirectional GaN FET with a single gate formed by integrating a single-gate bidirectional GaN FET in parallel with a bidirectional device formed of two back-to-back GaN FETs with a common source. The single-gate bidirectional GaN FET occupies most of the integrated circuit die, such that the integrated device has a low channel resistance, while also capturing the advantages of a back-to-back bidirectional GaN FET device.

Abstract: The present disclosure relates to connecting devices and systems for constructing a structure. Specifically, the present disclosure relates to a connector device and system useful for joining structural elements together for constructing a roof on a building. The present disclosure provides embodiments of connectors which are used to secure roof purlins to rafters and/or trusses to enhance the structural integrity of the roof.

Abstract: A fitting assembly for connection to a flexible duct includes a ferrule configured for insertion into an open end of the flexible duct a fitting removably connected to the ferrule. The ferrule includes a sidewall defining a minor diameter and a major diameter spaced apart from the minor diameter, and a ferrule thread extending radially outward from the sidewall. One of the fitting and the ferrule defines a recess. Another of the fitting and the ferrule comprises a tab configured to extend into the recess. One of the recess and the tab comprises an edge. Another of the recess and the tab comprises a ramped surface extending in a circumferential direction of the ferrule, such that rotation of the ferrule relative to the fitting causes the ramped surface to engage the edge, thereby radially deflecting the tab and disengaging the tab from the recess.

Abstract: A fitting assembly for connection to a flexible duct includes a fitting and a ferrule extending from the fitting. The ferrule includes a first end configured for insertion into an open end of the flexible duct, a second end adjacent to the fitting, and a sidewall extending between the first end and the second end. The sidewall defines a minor diameter adjacent the first end and a major diameter spaced apart from the minor diameter. The ferrule further includes a ferrule thread extending radially outward from the sidewall. The minor diameter is less than or equal to an inner diameter of the flexible duct with the flexible duct fully elongated, and the major diameter is greater than the inner diameter of the flexible duct with the flexible duct fully elongated.

Abstract: A synthetic antiferromagnetic structure for a spintronic device is disclosed and has an FL2/Co or Co alloy/antiferromagnetic coupling/Co or Co alloy/CoFeB configuration where FL2 is a ferromagnetic free layer with intrinsic PMA. Antiferromagnetic coupling is improved by inserting a Co or Co alloy dusting layer on top and bottom surfaces of the antiferromagnetic coupling layer. The FL2 layer may be a L10 ordered alloy, a rare earth-transition metal alloy, or an (A1/A2)n laminate where A1 is one of Co, CoFe, or an alloy thereof, and A2 is one of Pt, Pd, Rh, Ru, Ir, Mg, Mo, Os, Si, V, Ni, NiCo, and NiFe, or A1 is Fe and A2 is V. A method is also provided for forming the synthetic antiferromagnetic structure.

Abstract: An indoor environmental control and air distribution system for a building includes: an air handling unit; a manifold connected to the air handling unit having a chamber formed by a plurality of walls and a plurality of orifices formed through at least one of the walls; air distribution conduits each independently having a first end connected to the orifices of the manifold and a second end extending out from the manifold into different zones throughout the building; and an airflow modulating device having one or more airflow regulating dampers independently configured to move into at least two positions in which each position provides a different percentage of total air volume to each air distribution conduit. A method of using the indoor environmental control and air distribution system is also included.

Abstract: An indoor environmental control and air distribution system for a building includes: an air handling unit; a manifold connected to the air handling unit having a chamber formed by a plurality of walls and a plurality of orifices formed through at least one of the walls; air distribution conduits each independently having a first end connected to the orifices of the manifold and a second end extending out from the manifold into different zones throughout the building; and an airflow modulating device having one or more airflow regulating dampers independently configured to move into at least two positions in which each position provides a different percentage of total air volume to each air distribution conduit. A method of using the indoor environmental control and air distribution system is also included.

Abstract: A synthetic antiferromagnetic structure for a spintronic device is disclosed and has an FL2/Co or Co alloy/antiferromagnetic coupling/Co or Co alloy/CoFeB configuration where FL2 is a ferromagnetic free layer with intrinsic PMA. Antiferromagnetic coupling is improved by inserting a Co or Co alloy dusting layer on top and bottom surfaces of the antiferromagnetic coupling layer. The FL2 layer may be a L10 ordered alloy, a rare earth-transition metal alloy, or an (A1/A2)n laminate where A1 is one of Co, CoFe, or an alloy thereof, and A2 is one of Pt, Pd, Rh, Ru, Ir, Mg, Mo, Os, Si, V, Ni, NiCo, and NiFe, or A1 is Fe and A2 is V. A method is also provided for forming the synthetic antiferromagnetic structure.

Abstract: A cascaded bootstrapping gate driver configured to provide quick turn-on of a high side power FET and low static current consumption. The cascaded bootstrapping gate driver includes an initial bootstrapping stage with a resistor to decrease static current consumption during transistor turn-off. A secondary bootstrapping stage is driven by the initial bootstrapping stage and includes a GaN FET transistor with a low on resistance in place of the resistor. The source terminal of the GaN FET transistor provides a gate driving voltage to the high side power switch FET. The low on-resistance of the GaN FET transistor provides quick turn-on of the high side power FET. Transistors in the cascaded bootstrapping gate driver are preferably enhancement mode GaN FETs and may be integrated into a single semiconductor die.

Abstract: The present disclosure relates to reinforcement devices, systems and methods for use in constructing new structures, including post frame structures. Specifically, the present disclosure relates to reinforcement devices, systems and methods for replacing traditional wood and/or precast concrete columns utilized in building a new construction foundation, with a height adjustable foundation column assembly constructed from a corrosion resistant material. The present disclosure also relates to reinforcement devices, systems and methods useful for reinforcing existing post frame structures, particularly those with framing elements requiring repair.

Abstract: The present disclosure relates to reinforcement devices, systems and methods for use in constructing new structures, including post frame structures. Specifically, the present disclosure relates to reinforcement devices, systems and methods for replacing traditional wood and/or precast concrete columns utilized in building a new construction foundation, with a height adjustable foundation column assembly constructed from a corrosion resistant material. The present disclosure also relates to reinforcement devices, systems and methods useful for reinforcing existing post frame structures, particularly those with framing elements requiring repair.

Abstract: An enhancement-mode transistor gate structure which includes a spacer layer of GaN disposed above a barrier layer, a first layer of pGaN above the spacer layer, an etch stop layer of p-type Al-containing column III-V material, for example, pAlGaN or pAlInGaN, disposed above the first p-GaN layer, and a second p-GaN layer, having a greater thickness than the first p-GaN layer, disposed over the etch stop layer. The etch stop layer minimizes damage to the underlying barrier layer during gate etching steps, and improves GaN spacer thickness uniformity.

Abstract: Circuits, structures and techniques for independently connecting a surrounding material in a part of a semiconductor device to a contact of its respective device. To achieve this, a combination of one or more conductive wells that are electrically isolated in at least one bias polarity are provided.

Abstract: A cascaded bootstrapping gate driver configured to provide quick turn-on of a high side power FET and low static current consumption. The cascaded bootstrapping gate driver includes an initial bootstrapping stage with a resistor to decrease static current consumption during transistor turn-off. A secondary bootstrapping stage is driven by the initial bootstrapping stage and includes a GaN FET transistor with a low on resistance in place of the resistor. The source terminal of the GaN FET transistor provides a gate driving voltage to the high side power switch FET. The low on-resistance of the GaN FET transistor provides quick turn-on of the high side power FET. Transistors in the cascaded bootstrapping gate driver are preferably enhancement mode GaN FETs and may be integrated into a single semiconductor die.