Patents by Inventor Robert Beach

Robert Beach has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Enhancement Mode III-Nitride Device
    Publication number: 20140030858
    Abstract: A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface of two III-nitride materials is interrupted when the gate electrode is inactive to prevent current flow in the device. The gate electrode can be a schottky contact or an insulated metal contact. Two gate electrodes can be provided to form a bi-directional switch with nominally off characteristics. The recesses formed with the gate electrode can have sloped sides. The gate electrodes can be formed in a number of geometries in conjunction with current carrying electrodes of the device.
    Type: Application
    Filed: September 26, 2013
    Publication date: January 30, 2014
    Applicant: International Rectifier Corporation
    Inventor: Robert Beach
  • Method for fabricating a semiconductor device
    Patent number: 8614129
    Abstract: A method of fabricating a III-nitride power semiconductor device that includes growing a transition layer over a substrate using at least two distinct and different growth methods.
    Type: Grant
    Filed: September 25, 2006
    Date of Patent: December 24, 2013
    Assignee: International Rectifier Corporation
    Inventors: Robert Beach, Paul Bridger, Michael A. Briere
  • Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application
    Patent number: 8609262
    Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.
    Type: Grant
    Filed: July 17, 2009
    Date of Patent: December 17, 2013
    Assignee: MagIC Technologies, Inc.
    Inventors: Cheng T. Horng, Ru-Ying Tong, Guangli Liu, Robert Beach, Witold Kula, Tai Min
  • III-nitride wafer fabrication
    Patent number: 8557681
    Abstract: A method for fabrication of a III-nitride film over a silicon wafer that includes forming control joints to allow for overall stress relief in the III-nitride film during the growth thereof.
    Type: Grant
    Filed: October 29, 2007
    Date of Patent: October 15, 2013
    Assignee: International Rectifier Corporation
    Inventors: Thomas Herman, Robert Beach
  • III-Nitride Heterojunction Device
    Publication number: 20130264579
    Abstract: A III-nitride heterojunction semiconductor device having a III-nitride heterojunction that includes a discontinuous two-dimensional electron gas under a gate thereof.
    Type: Application
    Filed: May 30, 2013
    Publication date: October 10, 2013
    Inventors: Paul Bridger, Robert Beach
  • III-Nitride Heterojunction Device
    Publication number: 20130256695
    Abstract: A III-nitride heterojunction semiconductor device having a III-nitride heterojunction that includes a discontinuous two-dimensional electron gas under a gate thereof.
    Type: Application
    Filed: May 30, 2013
    Publication date: October 3, 2013
    Inventors: Paul Bridger, Robert Beach
  • Enhancement mode III-nitride FET
    Patent number: 8546206
    Abstract: A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface of two III-nitride materials is interrupted when the gate electrode is inactive to prevent current flow in the device. The gate electrode can be a schottky contact or an insulated metal contact. Two gate electrodes can be provided to form a bi-directional switch with nominally off characteristics. The recesses formed with the gate electrode can have sloped sides. The gate electrodes can be formed in a number of geometries in conjunction with current carrying electrodes of the device.
    Type: Grant
    Filed: July 21, 2011
    Date of Patent: October 1, 2013
    Assignee: International Rectifier Corporation
    Inventor: Robert Beach
  • III-Nitride Power Device
    Publication number: 20130248884
    Abstract: A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.
    Type: Application
    Filed: May 23, 2013
    Publication date: September 26, 2013
    Applicant: International Rectifier Corporation
    Inventors: Robert Beach, Zhi He, Jianjun Cao
  • STT-MRAM Reference Layer Having Substantially Reduced Stray Field and Consisting of a Single Magnetic Domain
    Publication number: 20130240963
    Abstract: An STT MTJ cell is formed with a magnetic anisotropy of its free and reference layers that is perpendicular to their planes of formation. The reference layer of the cell is an SAF multilayered structure with a single magnetic domain to enhance the bi-stability of the magnetoresistive states of the cell. The free layer of the cell is etched back laterally from the reference layer, so that the fringing stray field of the reference layer is no more than 15% of the coercivity of the free layer and has minimal effect on the free layer.
    Type: Application
    Filed: March 16, 2012
    Publication date: September 19, 2013
    Applicant: HEADWAY TECHNOLOGIES, INC.
    Inventors: Robert Beach, Guenole Jan, Yu-Jen Wang, Witold Kula, Po-Kang Wang
  • III-Nitride Multi-Channel Heterojunction Device
    Publication number: 20130240911
    Abstract: A III-nitride power semiconductor device that includes a plurality of III-nitride heterojunctions.
    Type: Application
    Filed: May 9, 2013
    Publication date: September 19, 2013
    Applicant: International Rectifier Corporation
    Inventor: Robert Beach
  • ENHANCEMENT MODE GaN HEMT DEVICE
    Publication number: 20130234153
    Abstract: An enhancement-mode GaN transistor. The enhancement-mode GaN transistor includes a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate III-V compound containing acceptor type dopant elements, and a gate metal, where the gate III-V compound and the gate metal are formed with a single photo mask process to be self-aligned and the bottom of the gate metal and the top of the gate compound have the same dimension. The enhancement mode GaN transistor may also have a field plate made of Ohmic metal, where a drain Ohmic metal, a source Ohmic metal, and the field plate are formed by a single photo mask process.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 12, 2013
    Applicant: Efficient Power Conversion Corporation
    Inventors: Alexander Lidow, Robert Beach, Alana Nakata, Jianjun Cao, Guang Yuang Zhao
  • System for multiple wireless local area networks
    Patent number: 8498278
    Abstract: A system is provided for a wireless local area network. The system includes, but is not limited to, at least one cell controller and simplified RF ports which are configured to provide lower level media access control functions. Higher level media access control functions are provided in a cell controller, which may service one or more RF ports that are capable operating with at least two wireless local area subnetworks. Mobile units can also be configured with the higher level media access control functions being performed in a host processor.
    Type: Grant
    Filed: January 11, 2007
    Date of Patent: July 30, 2013
    Assignee: Symbol Technologies, Inc.
    Inventor: Robert Beach
  • III-nitride heterojunction device
    Patent number: 8455920
    Abstract: A III-nitride heterojunction semiconductor device having a III-nitride heterojunction that includes a discontinuous two-dimensional electron gas under a gate thereof.
    Type: Grant
    Filed: May 22, 2008
    Date of Patent: June 4, 2013
    Assignee: International Rectifier Corporation
    Inventors: Paul Bridger, Robert Beach
  • III-nitride power semiconductor device
    Patent number: 8450721
    Abstract: A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.
    Type: Grant
    Filed: June 14, 2011
    Date of Patent: May 28, 2013
    Assignee: International Rectifier Corporation
    Inventors: Robert Beach, Zhi He, Jianjun Cao
  • III-nitride multi-channel heterojunction interdigitated rectifier
    Patent number: 8441030
    Abstract: A III-nitride power semiconductor device that includes a plurality of III-nitride heterojunctions.
    Type: Grant
    Filed: September 29, 2005
    Date of Patent: May 14, 2013
    Assignee: International Rectifier Corporation
    Inventor: Robert Beach
  • Back diffusion suppression structures
    Patent number: 8436398
    Abstract: An enhancement-mode GaN transistor, the transistor having a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate containing acceptor type dopant elements, and a diffusion barrier comprised of a III Nitride material between the gate and the buffer layer.
    Type: Grant
    Filed: April 7, 2010
    Date of Patent: May 7, 2013
    Assignee: Efficient Power Conversion Corporation
    Inventors: Alexander Lidow, Robert Beach, Guang Y. Zhao, Jianjun Cao
  • Dopant diffusion modulation in GaN buffer layers
    Patent number: 8431960
    Abstract: An enhancement mode gallium nitride (GaN) transistor with a Mg doped layer and a Mg growth interruption (diffusion barrier) layer to trap excess or residual Mg dopant. The Mg growth interruption (diffusion barrier) layer is formed by growing GaN, stopping the supply of gallium while maintaining a supply of ammonia or other nitrogen containing source to form a layer of magnesium nitride (MgN), and then resuming the flow of gallium to form a GaN layer to seal in the layer of MgN.
    Type: Grant
    Filed: April 7, 2010
    Date of Patent: April 30, 2013
    Assignee: Efficient Power Conversion Corporation
    Inventors: Robert Beach, Guang Yuan Zhao
  • Personal area networks
    Patent number: 8416735
    Abstract: A system is provided with mobile units that are arranged to conduct wireless data communications with access points following a first protocol, such as IEEE standard 802.11. The mobile units are further arranged for modified protocol communications with peripheral devices that permanently associate with a mobile unit.
    Type: Grant
    Filed: August 27, 2003
    Date of Patent: April 9, 2013
    Assignee: Symbol Technologies, Inc.
    Inventor: Robert Beach
  • Enhancement mode GaN HEMT device and method for fabricating the same
    Patent number: 8404508
    Abstract: An enhancement-mode GaN transistor and a method of forming it. The enhancement-mode GaN transistor includes a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate III-V compound containing acceptor type dopant elements, and a gate metal, where the gate III-V compound and the gate metal are formed with a single photo mask process to be self-aligned and the bottom of the gate metal and the top of the gate compound have the same dimension. The enhancement mode GaN transistor may also have a field plate made of Ohmic metal, where a drain Ohmic metal, a source Ohmic metal, and the field plate are formed by a single photo mask process.
    Type: Grant
    Filed: April 8, 2010
    Date of Patent: March 26, 2013
    Assignee: Efficient Power Conversion Corporation
    Inventors: Alexander Lidow, Robert Beach, Alana Nakata, Jianjun Cao, Guang Yuan Zhao
  • RF port for multiple wireless local area networks
    Patent number: 8391256
    Abstract: A wireless local area network is provided with simplified RF ports which are configured to provide lower level media access control functions. Higher level media access control functions are provided in a cell controller, which may service one or more RF ports that are capable operating with at least two wireless local area subnetworks. Mobile units can also be configured with the higher level media access control functions being performed in a host processor.
    Type: Grant
    Filed: January 11, 2007
    Date of Patent: March 5, 2013
    Assignee: Symbol Technologies, Inc.
    Inventor: Robert Beach