Abstract: A non-hermetic APD for operation in a moisture-containing ambient comprises an InP/InGaAsP-containing Group III-V compound semiconductor body and a p-n junction formed in the body. Typically the junction intersects a top surface of the body. A patterned dielectric layer is formed on the surface so as to cover at least those regions of the surface that are intersected by the junction. An electrode is formed in an opening in the dielectric layer so as to make electrical contact with one side of the junction. Importantly, the thickness of the dielectric layer is sufficient to reduce the leakage current through it to less than about 1 nA when the operating voltage is in the range of about 20-100 V. In accordance with a preferred embodiment, the thickness of the dielectric layer is greater than about 2 &mgr;m when the applied voltage is in excess of about 20 V. Moreover, the composition of dielectric layer may be either inorganic (e.g., a silicon nitride) or a combination of inorganic and organic materials.

Abstract: A non-hermetic APD for operation in a moisture-containing ambient comprises an InP/InGaAsP-containing Group III-V compound semiconductor body and a p-n junction formed in the body. Typically the junction intersects a top surface of the body. A patterned dielectric layer is formed on the surface so as to cover at least those regions of the surface that are intersected by the junction. An electrode is formed in an opening in the dielectric layer so as to make electrical contact with one side of the junction. Importantly, the thickness of the dielectric layer is sufficient to reduce the leakage current through it to less than about 1 nA when the operating voltage is in the range of about 20-100 V. In accordance with a preferred embodiment, the thickness of the dielectric layer is greater than about 2 &mgr;m when the applied voltage is in excess of about 20 V. Moreover, the composition of dielectric layer may be either inorganic (e.g., a silicon nitride) or a combination of inorganic and organic materials.

Abstract: The specification describes a process for passivating semiconductor laser structures with severe steps in the surface topography. The technique involves atomic layer deposition to produce the passivating layer which has exceptional coverage and uniformity, even in the case of trench features with trench aspect ratios as large as 5. In addition, the passivation produced by this process has excellent environmental stability, and affords protection against air born contaminant induced degradation.